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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
AOU4S60

AOU4S60

MOSFET N-CH 600V 4A TO251-3

Alpha & Omega Semiconductor Inc.

5,558 -
AOU4S60

数据表

aMOS™ TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 4A (Tc) 10V 900mOhm @ 2A, 10V Through Hole 4.1V @ 250µA 6 nC @ 10 V 600 V ±30V 263 pF @ 100 V - - TO-251-3 - 56.8W (Tc) -55°C ~ 150°C (TJ)
AOU7S65

AOU7S65

MOSFET N-CH 600V 7A TO251-3

Alpha & Omega Semiconductor Inc.

6,571 -
AOU7S65

数据表

aMOS™ TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 7A (Tc) 10V 650mOhm @ 3.5A, 10V Through Hole 4V @ 250µA 9.2 nC @ 10 V 600 V ±30V 434 pF @ 100 V - - TO-251-3 - 89W (Tc) -55°C ~ 150°C (TJ)
AOW10N60

AOW10N60

MOSFET N-CH 600V 10A TO262

Alpha & Omega Semiconductor Inc.

6,180 -
AOW10N60

数据表

- TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 10A (Tc) 10V 750mOhm @ 5A, 10V Through Hole 4.5V @ 250µA 40 nC @ 10 V 600 V ±30V 1600 pF @ 25 V - - TO-262 - 250W (Tc) -55°C ~ 150°C (TJ)
AOW10N65

AOW10N65

MOSFET N-CH 650V 10A TO262

Alpha & Omega Semiconductor Inc.

9,189 -
AOW10N65

数据表

- TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 10A (Tc) 10V 1Ohm @ 5A, 10V Through Hole 4.5V @ 250µA 33 nC @ 10 V 650 V ±30V 1645 pF @ 25 V - - TO-262 - 250W (Tc) -55°C ~ 150°C (TJ)
AOW11S60

AOW11S60

MOSFET N-CH 600V 11A TO262

Alpha & Omega Semiconductor Inc.

9,405 -
AOW11S60

数据表

- TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 11A (Tc) 10V 399mOhm @ 3.8A, 10V Through Hole 4.1V @ 250µA 11 nC @ 10 V 600 V ±30V 545 pF @ 100 V - - TO-262 - 178W (Tc) -55°C ~ 150°C (TJ)
AOW11S65

AOW11S65

MOSFET N-CH 650V 11A TO262

Alpha & Omega Semiconductor Inc.

9,461 -
AOW11S65

数据表

aMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 11A (Tc) 10V 399mOhm @ 5.5A, 10V Through Hole 4V @ 250µA 13.2 nC @ 10 V 650 V ±30V 646 pF @ 100 V - - TO-262 - 198W (Tc) -55°C ~ 150°C (TJ)
AOW12N50

AOW12N50

MOSFET N-CH 500V 12A TO262

Alpha & Omega Semiconductor Inc.

9,087 -
AOW12N50

数据表

- TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 12A (Tc) 10V 520mOhm @ 6A, 10V Through Hole 4.5V @ 250µA 37 nC @ 10 V 500 V ±30V 1633 pF @ 25 V - - TO-262 - 250W (Tc) -55°C ~ 150°C (TJ)
AOW12N60

AOW12N60

MOSFET N-CH 600V 12A TO262

Alpha & Omega Semiconductor Inc.

7,053 -
AOW12N60

数据表

- TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 12A (Tc) 10V 550mOhm @ 6A, 10V Through Hole 4.5V @ 250µA 50 nC @ 10 V 600 V ±30V 2100 pF @ 25 V - - TO-262 - 278W (Tc) -55°C ~ 150°C (TJ)
AOW12N65

AOW12N65

MOSFET N-CH 650V 12A TO262

Alpha & Omega Semiconductor Inc.

6,007 -
AOW12N65

数据表

- TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 12A (Tc) 10V 720mOhm @ 6A, 10V Through Hole 4.5V @ 250µA 48 nC @ 10 V 650 V ±30V 2150 pF @ 25 V - - TO-262 - 278W (Tc) -55°C ~ 150°C (TJ)
AOW14N50

AOW14N50

MOSFET N-CH 500V 14A TO262

Alpha & Omega Semiconductor Inc.

6,875 -
AOW14N50

数据表

- TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 14A (Tc) 10V 380mOhm @ 7A, 10V Through Hole 4.5V @ 250µA 51 nC @ 10 V 500 V ±30V 2297 pF @ 25 V - - TO-262 - 278W (Tc) -55°C ~ 150°C (TJ)
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