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场效应晶体管（FET）、MOSFET 阵列
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 配置 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | FET 特性 | 输入电容 (Ciss)（最大值）@ Vds | 功率 - 最大值 | 供应商设备封装 | 工作温度 | 安装类型 | 等级 | 认证 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
EPC2106MOSFET 2N-CH 100V 1.7A DIE EPC |
59,446 | - |
|
数据表 |
eGaN® | Die | Tape & Reel (TR) | Active | GaNFET (Gallium Nitride) | 2 N-Channel (Half Bridge) | 100V | 1.7A | 70mOhm @ 2A, 5V | 2.5V @ 600µA | 0.73nC @ 5V | - | 75pF @ 50V | - | Die | -40°C ~ 150°C (TJ) | Surface Mount | - | - |
|
EPC2103MOSFET 2N-CH 80V 28A DIE EPC |
5,410 | - |
|
数据表 |
eGaN® | Die | Tape & Reel (TR) | Active | GaNFET (Gallium Nitride) | 2 N-Channel (Half Bridge) | 80V | 28A | 5.5mOhm @ 20A, 5V | 2.5V @ 7mA | 6.5nC @ 5V | - | 760pF @ 40V | - | Die | -40°C ~ 150°C (TJ) | Surface Mount | - | - |
|
EPC2107MOSFET 3N-CH 100V 9BGA EPC |
5,182 | - |
|
数据表 |
eGaN® | 9-VFBGA | Tape & Reel (TR) | Active | GaNFET (Gallium Nitride) | 3 N-Channel (Half Bridge + Synchronous Bootstrap) | 100V | 1.7A, 500mA | 320mOhm @ 2A, 5V, 3.3Ohm @ 2A, 5V | 2.5V @ 100µA, 2.5V @ 20µA | 0.16nC @ 5V, 0.044nC @ 5V | - | 16pF @ 50V, 7pF @ 50V | - | 9-BGA (1.35x1.35) | -40°C ~ 150°C (TJ) | Surface Mount | - | - |
|
EPC2110MOSFET 2N-CH 120V 3.4A DIE EPC |
12,304 | - |
|
数据表 |
eGaN® | Die | Tape & Reel (TR) | Active | GaNFET (Gallium Nitride) | 2 N-Channel (Dual) Common Source | 120V | 3.4A | 60mOhm @ 4A, 5V | 2.5V @ 700µA | 0.8nC @ 5V | - | 80pF @ 60V | - | Die | -40°C ~ 150°C (TJ) | - | - | - |
|
EPC2221MOSFET 2N-CH 100V 5A DIE EPC |
4,063 | - |
|
数据表 |
- | Die | Tape & Reel (TR) | Active | GaNFET (Gallium Nitride) | 2 N-Channel (Dual) Common Source | 100V | 5A | - | - | - | - | - | - | Die | 150°C (TJ) | Surface Mount | - | - |
|
EPC2111MOSFET 2N-CH 30V 16A DIE EPC |
19,151 | - |
|
数据表 |
- | Die | Tape & Reel (TR) | Active | GaNFET (Gallium Nitride) | 2 N-Channel (Half Bridge) | 30V | 16A (Ta) | 19mOhm @ 15A, 5V, 8mOhm @ 15A, 5V | 2.5V @ 5mA | 2.2nC @ 5V, 5.7nC @ 5V | - | 230pF @ 15V, 590pF @ 15V | - | Die | -40°C ~ 150°C (TJ) | Surface Mount | - | - |
|
|
EPC2104MOSFET 2N-CH 100V 23A DIE EPC |
3,154 | - |
|
数据表 |
eGaN® | Die | Tape & Reel (TR) | Active | GaNFET (Gallium Nitride) | 2 N-Channel (Half Bridge) | 100V | 23A | 6.3mOhm @ 20A, 5V | 2.5V @ 5.5mA | 7nC @ 5V | - | 800pF @ 50V | - | Die | -40°C ~ 150°C (TJ) | Surface Mount | - | - |
|
|
EPC2102MOSFET 2N-CH 60V 23A DIE EPC |
3,505 | - |
|
数据表 |
eGaN® | Die | Tape & Reel (TR) | Active | GaNFET (Gallium Nitride) | 2 N-Channel (Half Bridge) | 60V | 23A | 4.4mOhm @ 20A, 5V | 2.5V @ 7mA | 6.8nC @ 5V | - | 830pF @ 30V | - | Die | -40°C ~ 150°C (TJ) | Surface Mount | - | - |
|
EPC2105MOSFET 2N-CH 80V 9.5A/38A DIE EPC |
1,410 | - |
|
数据表 |
eGaN® | Die | Tape & Reel (TR) | Active | GaNFET (Gallium Nitride) | 2 N-Channel (Half Bridge) | 80V | 9.5A, 38A | 14.5mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V | 2.5V @ 2.5mA, 2.5V @ 10mA | 2.5nC @ 5V, 10nC @ 5V | - | 300pF @ 40V, 1100pF @ 40V | - | Die | -40°C ~ 150°C (TJ) | Surface Mount | - | - |
|
|
EPC2101MOSFET 2N-CH 60V 9.5A/38A DIE EPC |
469 | - |
|
数据表 |
eGaN® | Die | Tape & Reel (TR) | Active | GaNFET (Gallium Nitride) | 2 N-Channel (Half Bridge) | 60V | 9.5A, 38A | 11.5mOhm @ 20A, 5V, 2.7mOhm @ 20A, 5V | 2.5V @ 3mA, 2.5V @ 12mA | 2.7nC @ 5V, 12nC @ 5V | - | 300pF @ 30V, 1200pF @ 30V | - | Die | -40°C ~ 150°C (TJ) | Surface Mount | - | - |
