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首页 > 产品 > 分立半导体产品 > 晶体管 > 场效应晶体管（FETs）、金属氧化物半导体场效应晶体管（MOSFETs） > 场效应晶体管（FET）、MOSFET 阵列

场效应晶体管（FET）、MOSFET 阵列

制造商	系列	封装/外壳	包装	产品状态	技术	配置	漏极到源极电压 (Vdss)	电流 - 连续漏极 (Id) @ 25°C	导通电阻 (Rds On)（最大值）@ Id, Vgs	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	FET 特性	输入电容 (Ciss)（最大值）@ Vds	功率 - 最大值	供应商设备封装	工作温度	安装类型	等级	认证
Advanced Linear Devices Inc. Alpha & Omega Semiconductor Inc. Analog Devices Inc./Maxim Integrated Analog Power Inc. Bruckewell Central Semiconductor Corp Comchip Technology Diodes Incorporated Diotec Semiconductor EMO Inc. EPC EPC Space, LLC Fairchild Semiconductor Flip Electronics GE Aerospace GeneSiC Semiconductor Goford Semiconductor Good-Ark Semiconductor Harris Corporation HY Electronic (Cayman) Limited Infineon Technologies International Rectifier IXYS Linear Integrated Systems, Inc. Littelfuse Inc. Micro Commercial Co Microchip Technology Microsemi Corporation Monolithic Power Systems Inc. National Semiconductor Nexperia USA Inc. Nuvoton Technology Corporation NXP Semiconductors onsemi Panasonic - BSG Panjit International Inc. Powerex Inc. Qorvo Rectron USA Renesas ROHM Semiconductor Sanken Electric USA Inc. Sanyo SemiQ Shenzhen Slkormicro Semicon Co., Ltd. Siliconix SMC Diode Solutions STMicroelectronics Taiwan Semiconductor Corporation Texas Instruments Toshiba Semiconductor and Storage Transphorm TT Electronics/Optek Technology UMW Unitrode Vishay General Semiconductor - Diodes Division Vishay Siliconix WeEn Semiconductors Wise-Integration Wolfspeed, Inc. YAGEO XSemi

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厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	技术	配置	漏极到源极电压 (Vdss)	电流 - 连续漏极 (Id) @ 25°C	导通电阻 (Rds On)（最大值）@ Id, Vgs	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	FET 特性	输入电容 (Ciss)（最大值）@ Vds	功率 - 最大值	供应商设备封装	工作温度	安装类型	等级	认证
ISG0614N06NM5HSCATMA1 MOSFET 2N-CH 60V 31A 10WHITFN Infineon Technologies	2,990	-	询价单	数据表	OptiMOS™ 5	10-PowerWDFN	Tape & Reel (TR)	Active	MOSFET (Metal Oxide)	2 N-Channel (Half Bridge)	60V	31A (Ta), 233A (Tc)	1.6mOhm @ 50A, 10V	3.3V @ 86µA	102nC @ 10V	-	6400pF @ 30V	3W (Ta), 167W (Tc)	PG-WHITFN-10-1	-55°C ~ 175°C (TJ)	Surface Mount	-	-
IAUTN08S5N012LATMA1 MOSFET 2N-CH 80V 300A PG-HSOF Infineon Technologies	1,956	-	询价单	数据表	OptiMOS™ 5	8-PowerSFN	Tape & Reel (TR)	Active	MOSFET (Metal Oxide)	2 N-Channel, Common Drain, Common Source	80V	300A (Tj)	1.15mOhm @ 100A, 10V	3.3V @ 275µA	24nC @ 10V	-	15340pF @ 40V	375W (Tc)	PG-HSOF-8-2	-55°C ~ 175°C (TJ)	Surface Mount	Automotive	AEC-Q101
WI62195 MOSFET 2N-CH 750V 9A 14PQFN Wise-Integration	1,477	-	询价单	数据表	WiseGan™	14-PowerLDFN	Tray	Active	GaNFET (Gallium Nitride)	2 N-Channel (Half Bridge)	750V	9A (Tj)	250mOhm @ 2A, 6V	1.75V @ 10mA	1.9nC @ 6V	-	53.5pF @ 400V	-	14-PQFN (6x8)	-40°C ~ 150°C (TJ)	Surface Mount	-	-
NXV08A170DB2 MOSFET 2N-CH 80V 200A APM12-CBA onsemi	238	-	询价单	数据表	-	12-PowerDIP Module (1.118", 28.40mm)	Tray	Active	MOSFET (Metal Oxide)	2 N-Channel (Half Bridge)	80V	200A (Tj)	0.99mOhm @ 80A, 10V, 1.35mOhm @ 80A, 10V	4V @ 250µA	195nC @ 10V	-	14000pF @ 40V	-	APM12-CBA	175°C (TJ)	Through Hole	Automotive	AEC-Q100
NVXK2TR40WXT MOSFET 4N-CH 1200V 27A APM32 onsemi	60	-	询价单	数据表	-	32-PowerDIP Module (1.311", 33.30mm)	Tube	Active	Silicon Carbide (SiC)	4 N-Channel (Half Bridge)	1200V (1.2kV)	27A (Tc)	59mOhm @ 35A, 20V	4.3V @ 10mA	106nC @ 20V	Silicon Carbide (SiC)	1789pF @ 800V	319W (Tc)	APM32	-55°C ~ 175°C (TJ)	Through Hole	Automotive	AEC-Q101
F435MR07W1D7S8B11ABPSA1 MOSFET 4N-CH 650V 35A MODULE Infineon Technologies	42	-	询价单	数据表	EasyPACK™ 1B	Module	Tray	Active	MOSFET (Metal Oxide)	4 N-Channel (Full Bridge)	650V	35A	39.4mOhm @ 35A, 10V	4.45V @ 1.74mA	141nC @ 10V	-	6950pF @ 400V	-	Module	-40°C ~ 150°C (TJ)	Chassis Mount	-	-
NXH030F120M3F1PTG MOSFET 4N-CH 1200V 38A 22PIM onsemi	26	-	询价单	数据表	-	Module	Tray	Active	SiCFET (Silicon Carbide)	4 N-Channel (Full Bridge)	1200V (1.2kV)	38A (Tc)	38.5mOhm @ 30A, 18V	4.4V @ 15mA	110nC @ 18V	Depletion Mode	2246pF @ 800V	100W (Tj)	22-PIM (33.8x42.5)	-40°C ~ 175°C (TJ)	Chassis Mount	-	-
NXH010P120M3F1PG MOSFET 2N-CH 1200V 105A onsemi	28	-	询价单	数据表	-	Module	Tray	Active	Silicon Carbide (SiC)	2 N-Channel (Half Bridge)	1200V (1.2kV)	105A (Tc)	14.5mOhm @ 90A, 18V	4.4V @ 45mA	314nC @ 18V	Silicon Carbide (SiC)	6451pF @ 800V	272W (Tj)	-	-40°C ~ 175°C (TJ)	Chassis Mount	-	-
NXH010P120M3F1PTG MOSFET 2N-CH 1200V 105A onsemi	27	-	询价单	数据表	-	Module	Tray	Active	Silicon Carbide (SiC)	2 N-Channel (Half Bridge)	1200V (1.2kV)	105A (Tc)	14.5mOhm @ 90A, 18V	4.4V @ 45mA	314nC @ 18V	Silicon Carbide (SiC)	6451pF @ 800V	272W (Tj)	-	-40°C ~ 175°C (TJ)	Chassis Mount	-	-
FF33MR12W1M1HPB11BPSA1 MOSFET Infineon Technologies	30	-	询价单	数据表	-	-	Tray	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
DF11MR12W1M1HFB67BPSA1 MOSFET 1200V AG-EASY1B Infineon Technologies	38	-	询价单	数据表	CoolSiC™	Module	Tray	Active	Silicon Carbide (SiC)	-	1200V (1.2kV)	-	-	-	-	-	-	-	AG-EASY1B	-	Chassis Mount	-	-
NXH030P120M3F1PTG MOSFET 2N-CH 1200V 42A onsemi	28	-	询价单	数据表	-	Module	Tray	Active	Silicon Carbide (SiC)	2 N-Channel (Half Bridge)	1200V (1.2kV)	42A (Tc)	38.5mOhm @ 30A, 18V	4.4V @ 15mA	110nC @ 18V	Silicon Carbide (SiC)	2271pF @ 800V	100W (Tj)	-	-40°C ~ 175°C (TJ)	Chassis Mount	-	-
NXH040P120MNF1PG MOSFET 2N-CH 1200V 30A onsemi	28	-	询价单	数据表	-	Module	Tray	Active	Silicon Carbide (SiC)	2 N-Channel (Dual) Common Source	1200V (1.2kV)	30A (Tc)	56mOhm @ 25A, 20V	4.3V @ 10mA	122.1nC @ 20V	-	1505pF @ 800V	74W	-	-40°C ~ 150°C (TJ)	Chassis Mount	-	-
NXH008P120M3F1PTG MOSFET 2N-CH 1200V 145A onsemi	27	-	询价单	数据表	-	Module	Tray	Active	Silicon Carbide (SiC)	2 N-Channel (Half Bridge)	1200V (1.2kV)	145A (Tc)	10.9mOhm @ 120A, 18V	4.4V @ 60mA	419nC @ 18V	Silicon Carbide (SiC)	8334pF @ 800V	382W (Tj)	-	-40°C ~ 175°C (TJ)	Chassis Mount	-	-
GCMX010A120B2B1P MOSFET 2N-CH 1200V 214A SemiQ	28	-	询价单	数据表	-	Module	Tray	Active	Silicon Carbide (SiC)	2 N-Channel (Half Bridge)	1200V (1.2kV)	214A (Tc)	12mOhm @ 100A, 20V	4V @ 40mA	476nC @ 20V	-	13100pF @ 800V	750W (Tc)	-	-40°C ~ 175°C (TJ)	Chassis Mount	-	-
NXH010P120MNF1PTNG MOSFET 2N-CH 1200V 114A onsemi	28	-	询价单	数据表	-	Module	Tray	Active	Silicon Carbide (SiC)	2 N-Channel (Dual)	1200V (1.2kV)	114A (Tc)	14mOhm @ 100A, 20V	4.3V @ 40mA	454nC @ 20V	-	4707pF @ 800V	250W (Tj)	-	-40°C ~ 175°C (TJ)	Chassis Mount	-	-
CAB016M12FM3T MOSFET 2N-CH 1200V 78A MODULE Wolfspeed, Inc.	30	-	询价单	数据表	-	Module	Box	Active	Silicon Carbide (SiC)	2 N-Channel (Half Bridge)	1200V (1.2kV)	78A (Tj)	21.3mOhm @ 80A, 15V	3.6V @ 23mA	236nC @ 15V	-	6600pF @ 800V	-	Module	-40°C ~ 150°C (TJ)	Chassis Mount	-	-
NXH020F120MNF1PG MOSFET 4N-CH 1200V 51A 22PIM onsemi	28	-	询价单	数据表	-	Module	Tray	Active	Silicon Carbide (SiC)	4 N-Channel (Full Bridge)	1200V (1.2kV)	51A (Tc)	30mOhm @ 50A, 20V	4.3V @ 20mA	213.5nC @ 20V	-	2420pF @ 800V	119W (Tj)	22-PIM (33.8x42.5)	-40°C ~ 175°C (TJ)	Chassis Mount	-	-
CAB011M12FM3T MOSFET 2N-CH 1200V 105A MODULE Wolfspeed, Inc.	38	-	询价单	数据表	-	Module	Box	Active	Silicon Carbide (SiC)	2 N-Channel (Half Bridge)	1200V (1.2kV)	105A (Tj)	14mOhm @ 100A, 15V	3.6V @ 35mA	324nC @ 15V	-	10300pF @ 800V	-	Module	-40°C ~ 150°C (TJ)	Chassis Mount	-	-
CCB032M12FM3T MOSFET 6N-CH 1200V 40A MODULE Wolfspeed, Inc.	33	-	询价单	数据表	-	Module	Box	Active	Silicon Carbide (SiC)	6 N-Channel (3-Phase Bridge)	1200V (1.2kV)	40A (Tj)	42.6mOhm @ 30A, 15V	3.6V @ 11.5mA	118nC @ 15V	-	3400pF @ 800V	-	Module	-40°C ~ 150°C (TJ)	Chassis Mount	-	-

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