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首页 > 产品 > 分立半导体产品 > 晶体管 > 场效应晶体管（FETs）、金属氧化物半导体场效应晶体管（MOSFETs） > 场效应晶体管（FET）、MOSFET 阵列

场效应晶体管（FET）、MOSFET 阵列

制造商	系列	封装/外壳	包装	产品状态	技术	配置	漏极到源极电压 (Vdss)	电流 - 连续漏极 (Id) @ 25°C	导通电阻 (Rds On)（最大值）@ Id, Vgs	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	FET 特性	输入电容 (Ciss)（最大值）@ Vds	功率 - 最大值	供应商设备封装	工作温度	安装类型	等级	认证
Advanced Linear Devices Inc. Alpha & Omega Semiconductor Inc. Analog Devices Inc./Maxim Integrated Analog Power Inc. Bruckewell Central Semiconductor Corp Comchip Technology Diodes Incorporated Diotec Semiconductor EMO Inc. EPC EPC Space, LLC Fairchild Semiconductor Flip Electronics GE Aerospace GeneSiC Semiconductor Goford Semiconductor Good-Ark Semiconductor Harris Corporation HY Electronic (Cayman) Limited Infineon Technologies International Rectifier IXYS Linear Integrated Systems, Inc. Littelfuse Inc. Micro Commercial Co Microchip Technology Microsemi Corporation Monolithic Power Systems Inc. National Semiconductor Nexperia USA Inc. Nuvoton Technology Corporation NXP Semiconductors onsemi Panasonic - BSG Panjit International Inc. Powerex Inc. Qorvo Rectron USA Renesas ROHM Semiconductor Sanken Electric USA Inc. Sanyo SemiQ Shenzhen Slkormicro Semicon Co., Ltd. Siliconix SMC Diode Solutions STMicroelectronics Taiwan Semiconductor Corporation Texas Instruments Toshiba Semiconductor and Storage Transphorm TT Electronics/Optek Technology UMW Unitrode Vishay General Semiconductor - Diodes Division Vishay Siliconix WeEn Semiconductors Wise-Integration Wolfspeed, Inc. YAGEO XSemi

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厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	技术	配置	漏极到源极电压 (Vdss)	电流 - 连续漏极 (Id) @ 25°C	导通电阻 (Rds On)（最大值）@ Id, Vgs	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	FET 特性	输入电容 (Ciss)（最大值）@ Vds	功率 - 最大值	供应商设备封装	工作温度	安装类型	等级	认证
PSMN4R2-40VSHX MOSFET 2N-CH 40V 98A LFPAK56D Nexperia USA Inc.	312	-	询价单	数据表	-	SOT-1205, 8-LFPAK56	Tape & Reel (TR)	Active	MOSFET (Metal Oxide)	2 N-Channel (Half Bridge)	40V	98A (Ta)	4.2mOhm @ 20A, 10V	3.6V @ 1mA	37nC @ 10V	-	2590pF @ 25V	85W (Ta)	LFPAK56D	-55°C ~ 175°C (TJ)	Surface Mount	-	-
SQJQ936E-T1_GE3 MOSFET 2N-CH 40V 100A PPAK8X8 Vishay Siliconix	1,870	-	询价单	数据表	TrenchFET®	PowerPAK® 8 x 8 Dual	Tape & Reel (TR)	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	40V	100A (Tc)	2.3mOhm @ 5A, 10V	3.5V @ 250µA	113nC @ 10V	-	6600pF @ 25V	75W (Tc)	PowerPAK® 8 x 8 Dual	-55°C ~ 175°C (TJ)	Surface Mount	Automotive	AEC-Q101
NVMJD2D7N04CLTWG MOSFET N-CH 40V LFPAK56 onsemi	3,000	-	询价单	数据表	-	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BUK7V4R2-40HX MOSFET 2N-CH 40V 98A LFPAK56D Nexperia USA Inc.	5,235	-	询价单	数据表	TrenchMOS™	SOT-1205, 8-LFPAK56	Tape & Reel (TR)	Active	MOSFET (Metal Oxide)	2 N-Channel (Half Bridge)	40V	98A (Ta)	4.2mOhm @ 20A, 10V	3.6V @ 1mA	37nC @ 10V	-	2590pF @ 25V	85W (Ta)	LFPAK56D	-55°C ~ 175°C (TJ)	Surface Mount	Automotive	AEC-Q101
FDPC8012S MOSFET 2N-CH 25V 13A PWRCLIP-33 onsemi	3,000	-	询价单	数据表	PowerTrench®	8-PowerWDFN	Tape & Reel (TR)	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual) Asymmetrical	25V	13A, 26A	7mOhm @ 12A, 4.5V	2.2V @ 250µA	8nC @ 4.5V	Logic Level Gate	1075pF @ 13V	800mW, 900mW	Powerclip-33	-55°C ~ 150°C (TJ)	Surface Mount	-	-
SI7956DP-T1-E3 MOSFET 2N-CH 150V 2.6A PPAK SO8 Vishay Siliconix	2,316	-	询价单	数据表	TrenchFET®	PowerPAK® SO-8 Dual	Tape & Reel (TR)	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	150V	2.6A	105mOhm @ 4.1A, 10V	4V @ 250µA	26nC @ 10V	Logic Level Gate	-	1.4W	PowerPAK® SO-8 Dual	-55°C ~ 150°C (TJ)	Surface Mount	-	-
CSD87355Q5DT MOSFET 2N-CH 30V 45A 8LSON Texas Instruments	1,840	-	询价单	数据表	NexFET™	8-PowerLDFN	Tape & Reel (TR)	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual) Asymmetrical	30V	45A	-	1.9V @ 250µA	13.7nC @ 4.5V	Logic Level Gate, 5V Drive	1860pF @ 15V	2.8W	8-LSON (5x6)	-55°C ~ 155°C (TJ)	Surface Mount	-	-
CSD86350Q5DT MOSFET 2N-CH 25V 40A 8LSON Texas Instruments	250	-	询价单	数据表	-	8-PowerLDFN	Tape & Reel (TR)	Active	MOSFET (Metal Oxide)	2 N-Channel (Half Bridge)	25V	40A (Ta)	5mOhm @ 25A, 5V, 1.1mOhm @ 25A, 5V	2.1V @ 250µA, 1.6V @ 250µA	10.7nC @ 4.5V, 25nC @ 4.5V	-	1870pF @ 12.5V, 4000pF @ 12.5V	13W (Ta)	8-LSON (5x6)	-55°C ~ 150°C (TJ)	Surface Mount	-	-
NVMFD5C446NT1G MOSFET 2N-CH 40V 24A 8DFN onsemi	1,450	-	询价单	数据表	-	8-PowerTDFN	Tape & Reel (TR)	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	40V	24A (Ta), 127A (Tc)	2.9mOhm @ 30A, 10V	3.5V @ 250µA	38nC @ 10V	-	2450pF @ 25V	3.2W (Ta), 89W (Tc)	8-DFN (5x6) Dual Flag (SO8FL-Dual)	-55°C ~ 175°C (TJ)	Surface Mount	Automotive	AEC-Q101
NVMFD5C650NLT1G MOSFET 2N-CH 60V 21A 8DFN onsemi	1,432	-	询价单	数据表	-	8-PowerTDFN	Tape & Reel (TR)	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	60V	21A (Ta), 111A (Tc)	4.2mOhm @ 20A, 10V	2.2V @ 98µA	16nC @ 4.5V	-	2546pF @ 25V	3.5W (Ta), 125W (Tc)	8-DFN (5x6) Dual Flag (SO8FL-Dual)	-55°C ~ 175°C (TJ)	Surface Mount	Automotive	AEC-Q101
EPC2100 MOSFET 2N-CH 30V 10A DIE EPC	230	-	询价单	数据表	eGaN®	Die	Tape & Reel (TR)	Active	GaNFET (Gallium Nitride)	2 N-Channel (Half Bridge)	30V	10A (Ta), 40A (Ta)	8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V	2.5V @ 4mA, 2.5V @ 16mA	4.9nC @ 15V, 19nC @ 15V	-	475pF @ 15V, 1960pF @ 15V	-	Die	-40°C ~ 150°C (TJ)	Surface Mount	-	-
NXH040P120MNF1PTG MOSFET 2N-CH 1200V 30A onsemi	28	-	询价单	数据表	-	Module	Tray	Active	Silicon Carbide (SiC)	2 N-Channel (Dual) Common Source	1200V (1.2kV)	30A (Tc)	56mOhm @ 25A, 20V	4.3V @ 10mA	122.1nC @ 20V	-	1505pF @ 800V	74W	-	-40°C ~ 150°C (TJ)	Chassis Mount	-	-
NXH040F120MNF1PTG MOSFET 4N-CH 1200V 30A 22PIM onsemi	28	-	询价单	数据表	-	Module	Tray	Active	Silicon Carbide (SiC)	4 N-Channel	1200V (1.2kV)	30A (Tc)	56mOhm @ 25A, 20V	4.3V @ 10mA	122.1nC @ 20V	-	1505pF @ 800V	74W (Tj)	22-PIM (33.8x42.5)	-40°C ~ 175°C (TJ)	Chassis Mount	-	-
NXH020P120MNF1PTG MOSFET 2N-CH 1200V 51A onsemi	28	-	询价单	数据表	-	Module	Tray	Active	Silicon Carbide (SiC)	2 N-Channel (Dual) Common Source	1200V (1.2kV)	51A (Tc)	30mOhm @ 50A, 20V	4.3V @ 20mA	213.5nC @ 20V	-	2420pF @ 800V	119W (Tj)	-	-40°C ~ 150°C (TJ)	Chassis Mount	-	-
NXH010P90MNF1PTG MOSFET 2N-CH 900V 154A onsemi	28	-	询价单	数据表	-	Module	Tray	Active	Silicon Carbide (SiC)	2 N-Channel (Dual) Common Source	900V	154A (Tc)	14mOhm @ 100A, 15V	4.3V @ 40mA	546.4nC @ 15V	-	7007pF @ 450V	328W (Tj)	-	-40°C ~ 150°C (TJ)	Chassis Mount	-	-
CBB032M12FM3 MOSFET 4N-CH 1200V 40A Wolfspeed, Inc.	54	-	询价单	数据表	-	Module	Tray	Active	Silicon Carbide (SiC)	4 N-Channel (Full Bridge)	1200V (1.2kV)	40A (Tj)	42.6mOhm @ 30A, 15V	3.6V @ 11.5mA	118nC @ 15V	-	3400pF @ 800V	-	-	-40°C ~ 150°C (TJ)	Chassis Mount	-	-
NXH020F120MNF1PTG MOSFET 4N-CH 1200V 51A 22PIM onsemi	28	-	询价单	数据表	-	Module	Tray	Active	Silicon Carbide (SiC)	4 N-Channel (Full Bridge)	1200V (1.2kV)	51A (Tc)	30mOhm @ 50A, 20V	4.3V @ 20mA	213.5nC @ 20V	-	2420pF @ 800V	119W (Tj)	22-PIM (33.8x42.5)	-40°C ~ 175°C (TJ)	Chassis Mount	-	-
NXH010P120MNF1PTG MOSFET 2N-CH 1200V 114A onsemi	28	-	询价单	数据表	-	Module	Tray	Active	Silicon Carbide (SiC)	2 N-Channel (Dual) Common Source	1200V (1.2kV)	114A (Tc)	14mOhm @ 100A, 20V	4.3V @ 40mA	454nC @ 20V	-	4707pF @ 800V	250W (Tj)	-	-40°C ~ 150°C (TJ)	Chassis Mount	-	-
CAB011M12FM3 MOSFET 2N-CH 1200V 105A Wolfspeed, Inc.	54	-	询价单	数据表	WolfPACK™	Module	Tray	Active	Silicon Carbide (SiC)	2 N-Channel (Half Bridge)	1200V (1.2kV)	105A	14mOhm @ 100A, 15V	3.6V @ 35mA	324nC @ 15V	-	10300pF @ 800V	-	-	-40°C ~ 150°C (TJ)	Chassis Mount	-	-
FBG20N04AC MOSFET 200V 4A 4SMD EPC Space, LLC	330	-	询价单	数据表	eGaN®	4-SMD, No Lead	Bulk	Active	MOSFET (Metal Oxide)	-	200V	4A (Tc)	130mOhm @ 4A, 5V	2.8V @ 1mA	3nC @ 5V	Logic Level Gate	150pF @ 100V	-	4-SMD	-55°C ~ 150°C (TJ)	Surface Mount	-	-

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