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场效应晶体管(FET)、MOSFET 阵列

制造商 系列 封装/外壳 包装 产品状态 技术 配置 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs FET 特性 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 供应商设备封装 工作温度 安装类型 等级 认证

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 配置 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs FET 特性 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 供应商设备封装 工作温度 安装类型 等级 认证
SP8K3FD5TB1

SP8K3FD5TB1

MOSFET 2N-CH 30V 8SOP

Rohm Semiconductor

8,440 -
SP8K3FD5TB1

数据表

- - Tape & Reel (TR) Obsolete - - - - - - - - - - - - - - -
SP8K3TB1

SP8K3TB1

MOSFET 2N-CH 30V 7A 8SOP

Rohm Semiconductor

9,042 -
SP8K3TB1

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) 30V 7A (Ta) 24mOhm @ 7A, 10V 2.5V @ 1mA 11.8nC @ 5V Logic Level Gate, 4V Drive 600pF @ 10V 2W (Ta) 8-SOP 150°C Surface Mount - -
BSC150N03LD

BSC150N03LD

MOSFET 2N-CH 30V 8A 8TDSON

Infineon Technologies

9,890 -
BSC150N03LD

数据表

OptiMOS™ 3 8-PowerVDFN Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Dual) 30V 8A 15mOhm @ 20A, 10V 2.2V @ 250µA 6.4nC @ 10V Logic Level Gate 1100pF @ 15V 26W PG-TDSON-8-4 -55°C ~ 150°C (TJ) Surface Mount - -
DF11MR12W1M1PB11BPSA1

DF11MR12W1M1PB11BPSA1

MOSFET 2N-CH 1200V 50A AG-EASY1B

Infineon Technologies

4,323 -
DF11MR12W1M1PB11BPSA1

数据表

EasyPACK™ Module Tray Obsolete Silicon Carbide (SiC) 2 N-Channel (Dual) 1200V (1.2kV) 50A (Tj) 22.5mOhm @ 50A, 15V 5.55V @ 20mA 124nC @ 15V - 3680pF @ 800V - AG-EASY1B-2 -40°C ~ 150°C (TJ) Chassis Mount - -
IRF7313TRPBF-1

IRF7313TRPBF-1

MOSFET 2N-CH 30V 6.5A 8SOIC

Infineon Technologies

5,947 -
IRF7313TRPBF-1

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) 30V 6.5A (Ta) 29mOhm @ 5.8A, 10V 1V @ 250µA 33nC @ 10V - 650pF @ 25V 2W (Ta) 8-SOIC -55°C ~ 150°C (TJ) Surface Mount - -
MSCMC120AM02CT6LIAG

MSCMC120AM02CT6LIAG

MOSFET 2N-CH 1200V 742A SP6C LI

Microchip Technology

6,766 -
MSCMC120AM02CT6LIAG

数据表

- Module Tube Last Time Buy Silicon Carbide (SiC) 2 N Channel (Phase Leg) 1200V (1.2kV) 742A (Tc) 2.85mOhm @ 600A, 20V 4V @ 180mA 1932nC @ 20V - 33500pF @ 1000V 3200W (Tc) SP6C LI -40°C ~ 175°C (TJ) Chassis Mount - -
MSCMC120AM04CT6LIAG

MSCMC120AM04CT6LIAG

MOSFET 2N-CH 1200V 388A SP6C LI

Microchip Technology

5,991 -
MSCMC120AM04CT6LIAG

数据表

- Module Tube Last Time Buy Silicon Carbide (SiC) 2 N Channel (Phase Leg) 1200V (1.2kV) 388A (Tc) 5.7mOhm @ 300A, 20V 4V @ 90mA 966nC @ 20V - 16700pF @ 1000V 1754W (Tc) SP6C LI -40°C ~ 175°C (TJ) Chassis Mount - -
MSCMC120AM03CT6LIAG

MSCMC120AM03CT6LIAG

MOSFET 2N-CH 1200V 631A SP6C LI

Microchip Technology

7,657 -
MSCMC120AM03CT6LIAG

数据表

- Module Tube Last Time Buy Silicon Carbide (SiC) 2 N Channel (Phase Leg) 1200V (1.2kV) 631A (Tc) 3.4mOhm @ 500A, 20V 4V @ 150mA 1610nC @ 20V - 27900pF @ 1000V 2778W (Tc) SP6C LI -40°C ~ 175°C (TJ) Chassis Mount - -
MSCMC90AM12C3AG

MSCMC90AM12C3AG

MOSFET 900V 110A SP3F

Microchip Technology

2,313 -
MSCMC90AM12C3AG

数据表

- Module Tube Active Silicon Carbide (SiC) - 900V 110A (Tc) - - - - - - SP3F - Chassis Mount - -
MSCMC120AM07CT6LIAG

MSCMC120AM07CT6LIAG

MOSFET 2N-CH 1200V 264A SP6C LI

Microchip Technology

2,593 -
MSCMC120AM07CT6LIAG

数据表

- Module Tube Last Time Buy Silicon Carbide (SiC) 2 N Channel (Phase Leg) 1200V (1.2kV) 264A (Tc) 8.7mOhm @ 240A, 20V 4V @ 60mA 690nC @ 20V - 11400pF @ 1000V 1350W (Tc) SP6C LI -40°C ~ 175°C (TJ) Chassis Mount - -
MSCMC170AM08CT6LIAG

MSCMC170AM08CT6LIAG

MOSFET 2N-CH 1700V 280A SP6C LI

Microchip Technology

4,025 -
MSCMC170AM08CT6LIAG

数据表

- Module Tube Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) 1700V (1.7kV) 280A (Tc) 11.7mOhm @ 300A, 20V 4V @ 108mA 1128nC @ 20V - 22000pF @ 1000V 1780W (Tc) SP6C LI -40°C ~ 150°C (TJ) Chassis Mount - -
IRF9910TRPBF-1

IRF9910TRPBF-1

MOSFET 2N-CH 20V 10A 8SOIC

Infineon Technologies

2,349 -
IRF9910TRPBF-1

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) 20V 10A (Ta), 12A (Ta) 13.4mOhm @ 10A, 10V, 9.3mOhm @ 12A, 10V 2.55V @ 250µA 11nC @ 4.5V, 23nC @ 4.5V - 900pF @ 10V, 1860pF @ 10V 2W (Ta) 8-SOIC -55°C ~ 150°C (TJ) Surface Mount - -
NTMFD5875NLT1G

NTMFD5875NLT1G

MOSFET 2N-CH 60V 7A 8DFN

onsemi

5,672 -
NTMFD5875NLT1G

数据表

- 8-PowerTDFN Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) 60V 7A (Ta), 22A (Tc) 33mOhm @ 7.5A, 10V 3V @ 250µA 5.9nC @ 4.5V Logic Level Gate 540pF @ 25V 3.2W (Ta), 32W (Tc) 8-DFN (5x6) Dual Flag (SO8FL-Dual) -55°C ~ 175°C (TJ) Surface Mount - -
AO4914

AO4914

MOSFET 2N-CH 30V 8A 8SOIC

Alpha & Omega Semiconductor Inc.

3,310 -
AO4914

数据表

- 8-SOIC (0.154", 3.90mm Width) Tube Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual), Schottky 30V 8A (Ta) 20.5mOhm @ 8A, 10V 2.4V @ 250µA 18nC @ 10V - 865pF @ 15V 2W (Ta) 8-SOIC -55°C ~ 150°C (TJ) Surface Mount - -
FF6MR12KM1PHOSA1

FF6MR12KM1PHOSA1

MOSFET 2N-CH 1200V 250A AG-62MM

Infineon Technologies

5,538 -
FF6MR12KM1PHOSA1

数据表

CoolSiC™ Module Tray Obsolete Silicon Carbide (SiC) 2 N-Channel (Half Bridge) 1200V (1.2kV) 250A (Tc) 5.81mOhm @ 250A, 15V 5.15V @ 80mA 496nC @ 15V - 14700pF @ 800V - AG-62MM -40°C ~ 150°C (TJ) Chassis Mount - -
FF3MR12KM1PHOSA1

FF3MR12KM1PHOSA1

MOSFET 2N-CH 1200V 375A AG-62MM

Infineon Technologies

7,759 -
FF3MR12KM1PHOSA1

数据表

CoolSiC™ Module Tray Obsolete Silicon Carbide (SiC) 2 N-Channel (Half Bridge) 1200V (1.2kV) 375A (Tc) 2.83mOhm @ 375A, 15V 5.15V @ 168mA 1000nC @ 15V - 29800pF @ 25V - AG-62MM -40°C ~ 150°C (TJ) Chassis Mount - -
FF3MR12KM1HOSA1

FF3MR12KM1HOSA1

MOSFET 2N-CH 1200V 375A AG-62MM

Infineon Technologies

4,181 -
FF3MR12KM1HOSA1

数据表

CoolSiC™ Module Tray Obsolete Silicon Carbide (SiC) 2 N-Channel (Half Bridge) 1200V (1.2kV) 375A (Tc) 2.83mOhm @ 375A, 15V 5.15V @ 168mA 1000nC @ 15V - 29800pF @ 25V - AG-62MM -40°C ~ 150°C (TJ) Chassis Mount - -
FF2MR12KM1PHOSA1

FF2MR12KM1PHOSA1

MOSFET 2N-CH 1200V 500A AG-62MM

Infineon Technologies

3,630 -
FF2MR12KM1PHOSA1

数据表

CoolSiC™ Module Tray Obsolete Silicon Carbide (SiC) 2 N-Channel (Half Bridge) 1200V (1.2kV) 500A (Tc) 2.13mOhm @ 500A, 15V 5.15V @ 224mA 1340nC @ 15V - 39700pF @ 800V - AG-62MM -40°C ~ 150°C (TJ) Chassis Mount - -
HUFA76407DK8TF085P

HUFA76407DK8TF085P

MOSFET 2N-CH 60V 3.8A 8SOIC

onsemi

3,605 -
HUFA76407DK8TF085P

数据表

UltraFET™ 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) 60V 3.8A (Ta) 90mOhm @ 3.8A, 10V 3V @ 250µA - Logic Level Gate 330pF @ 25V 2.5W (Ta) 8-SOIC -55°C ~ 150°C (TJ) Surface Mount - -
PMDPB95XNE2115

PMDPB95XNE2115

MOSFET 2N-CH 30V 2.7A 6HUSON

NXP USA Inc.

5,135 -
PMDPB95XNE2115

数据表

- 6-UDFN Exposed Pad Bulk Active MOSFET (Metal Oxide) 2 N-Channel 30V 2.7A (Ta) 99mOhm @ 2.8A, 4.5V 1.25V @ 250µA 4.5nC @ 4.5V - 258pF @ 15V 510mW (Ta), 8.33W (Tc) 6-HUSON (2x2) -55°C ~ 150°C (TJ) Surface Mount - -
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