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场效应晶体管（FET）、MOSFET 阵列
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 配置 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | FET 特性 | 输入电容 (Ciss)（最大值）@ Vds | 功率 - 最大值 | 供应商设备封装 | 工作温度 | 安装类型 | 等级 | 认证 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
APTC90TAM60TPGMOSFET 6N-CH 900V 59A SP6-P Microsemi Corporation |
5,105 | - |
|
数据表 |
CoolMOS™ | SP6 | Tray | Obsolete | MOSFET (Metal Oxide) | 6 N-Channel (3-Phase Bridge) | 900V | 59A | 60mOhm @ 52A, 10V | 3.5V @ 6mA | 540nC @ 10V | - | 13600pF @ 100V | 462W | SP6-P | -40°C ~ 150°C (TJ) | Chassis Mount | - | - |
|
|
JAN2N7334MOSFET 4N-CH 100V 1A MO-036AB Microsemi Corporation |
5,651 | - |
|
数据表 |
- | 14-DIP (0.300", 7.62mm) | Bulk | Active | MOSFET (Metal Oxide) | 4 N-Channel | 100V | 1A | 700mOhm @ 600mA, 10V | 4V @ 250µA | 60nC @ 10V | - | - | 1.4W | MO-036AB | -55°C ~ 150°C (TJ) | Through Hole | Military | MIL-PRF-19500/597 |
|
|
JAN2N7335MOSFET 4P-CH 100V 0.75A Microsemi Corporation |
7,677 | - |
|
数据表 |
- | 14-DIP (0.300", 7.62mm) | Bulk | Obsolete | MOSFET (Metal Oxide) | 4 P-Channel | 100V | 750mA | 1.4Ohm @ 500mA, 10V | 4V @ 250µA | - | - | - | 1.4W | - | -55°C ~ 150°C (TJ) | Through Hole | Military | MIL-PRF-19500/599 |
|
|
JANTX2N7335MOSFET 4P-CH 100V 0.75A MO-036AB Microsemi Corporation |
3,431 | - |
|
数据表 |
- | 14-DIP (0.300", 7.62mm) | Bulk | Obsolete | MOSFET (Metal Oxide) | 4 P-Channel | 100V | 750mA | 1.4Ohm @ 500mA, 10V | 4V @ 250µA | - | - | - | 1.4W | MO-036AB | -55°C ~ 150°C (TJ) | Through Hole | Military | MIL-PRF-19500/599 |
|
|
JANTXV2N7334MOSFET 4N-CH 100V 1A MO-036AB Microsemi Corporation |
8,127 | - |
|
数据表 |
- | 14-DIP (0.300", 7.62mm) | Bulk | Active | MOSFET (Metal Oxide) | 4 N-Channel | 100V | 1A | 700mOhm @ 600mA, 10V | 4V @ 250µA | 60nC @ 10V | - | - | 1.4W | MO-036AB | -55°C ~ 150°C (TJ) | Through Hole | Military | MIL-PRF-19500/597 |
|
|
JANTXV2N7335MOSFET 4P-CH 100V 0.75A MO-036AB Microsemi Corporation |
4,342 | - |
|
数据表 |
- | 14-DIP (0.300", 7.62mm) | Bulk | Obsolete | MOSFET (Metal Oxide) | 4 P-Channel | 100V | 750mA | 1.4Ohm @ 500mA, 10V | 4V @ 250µA | - | - | - | 1.4W | MO-036AB | -55°C ~ 150°C (TJ) | Through Hole | Military | MIL-PRF-19500/599 |
|
|
2N7335MOSFET 4P-CH 100V 0.75A MO-036AB Microsemi Corporation |
3,329 | - |
|
数据表 |
- | 14-DIP (0.300", 7.62mm) | Bulk | Obsolete | MOSFET (Metal Oxide) | 4 P-Channel | 100V | 750mA | 1.4Ohm @ 500mA, 10V | 4V @ 250µA | - | - | - | 1.4W | MO-036AB | -55°C ~ 150°C (TJ) | Through Hole | - | - |
|
|
APTSM120AM08CT6AGMOSFET 2N-CH 1200V 370A SP6 Microsemi Corporation |
3,273 | - |
|
数据表 |
- | SP6 | Bulk | Active | Silicon Carbide (SiC) | 2 N-Channel (Dual), Schottky | 1200V (1.2kV) | 370A (Tc) | 10mOhm @ 200A, 20V | 3V @ 10mA | 1360nC @ 20V | - | - | 2300W | SP6 | -40°C ~ 175°C (TJ) | Chassis Mount | - | - |
