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场效应晶体管(FET)、MOSFET 阵列

制造商 系列 封装/外壳 包装 产品状态 技术 配置 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs FET 特性 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 供应商设备封装 工作温度 安装类型 等级 认证

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 配置 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs FET 特性 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 供应商设备封装 工作温度 安装类型 等级 认证
GWM180-004X2-SMD

GWM180-004X2-SMD

MOSFET 6N-CH 40V 180A ISOPLUS

IXYS

4,142 -
GWM180-004X2-SMD

数据表

- 17-SMD, Gull Wing Tube Active MOSFET (Metal Oxide) 6 N-Channel (3-Phase Bridge) 40V 180A 2.5mOhm @ 100A, 10V 4.5V @ 1mA 110nC @ 10V - - - ISOPLUS-DIL™ -55°C ~ 175°C (TJ) Surface Mount - -
VWM270-0075X2

VWM270-0075X2

MOSFET 6N-CH 75V 270A V2-PAK

IXYS

4,068 -
VWM270-0075X2

数据表

- V2-PAK Box Active MOSFET (Metal Oxide) 6 N-Channel (3-Phase Bridge) 75V 270A 2.1mOhm @ 100A, 10V 4V @ 500µA 360nC @ 10V - - - V2-PAK -40°C ~ 175°C (TJ) Chassis Mount - -
MTM763250LBF

MTM763250LBF

MOSFET N/P-CH 20V 1.7A WSMINI6

Panasonic Electronic Components

5,915 -
MTM763250LBF

数据表

- 6-SMD, Flat Leads Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) N and P-Channel 20V 1.7A, 1A 120mOhm @ 1A, 4V 1.3V @ 1mA - Logic Level Gate 280pF @ 10V 700mW WSMini6-F1-B 150°C (TJ) Surface Mount - -
APTMC60TL11CT3AG

APTMC60TL11CT3AG

MOSFET 4N-CH 1200V 28A SP3

Microchip Technology

7,373 -
APTMC60TL11CT3AG

数据表

- SP3 Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) 1200V (1.2kV) 28A (Tc) 98mOhm @ 20A, 20V 2.2V @ 1mA 49nC @ 20V - 950pF @ 1000V 125W SP3 -40°C ~ 150°C (TJ) Chassis Mount - -
DMN1033UCB4-7

DMN1033UCB4-7

MOSFET 2N-CH U-WLB1818-4

Diodes Incorporated

9,118 -
DMN1033UCB4-7

数据表

- 4-UFBGA, WLBGA Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Common Drain - - - - 37nC @ 4.5V Logic Level Gate - 1.45W U-WLB1818-4 -55°C ~ 150°C (TJ) Surface Mount - -
UPA2690T1R-E2-AX

UPA2690T1R-E2-AX

MOSFET N/P-CH 20V 4A/3A 6HUSON

Renesas Electronics Corporation

5,472 -
UPA2690T1R-E2-AX

数据表

- 6-WFDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Complementary 20V 4A, 3A 42mOhm @ 2A, 4.5V - 4.5nC @ 10V Logic Level Gate, 2.5V Drive 330pF @ 10V 2.3W 6-HUSON (2x2) 150°C (TJ) Surface Mount - -
UPA2660T1R-E2-AX

UPA2660T1R-E2-AX

MOSFET 2N-CH 20V 4A 6HUSON

Renesas Electronics Corporation

6,009 -
UPA2660T1R-E2-AX

数据表

- 6-WFDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) 20V 4A 62mOhm @ 2A, 4.5V - 4.5nC @ 10V Logic Level Gate, 2.5V Drive 330pF @ 10V 2.3W 6-HUSON (2x2) 150°C (TJ) Surface Mount - -
RJM0306JSP-01#J0

RJM0306JSP-01#J0

MOSFET 2N/2P-CH 30V 3.5A 8SOP

Renesas Electronics Corporation

3,627 -
RJM0306JSP-01#J0

数据表

- 8-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 2 N and 2 P-Channel (Full Bridge) 30V 3.5A 65mOhm @ 2A, 10V - 5nC @ 10V Logic Level Gate, 4V Drive 290pF @ 10V 2.2W 8-SOP - Surface Mount - -
SI4618DY-T1-GE3

SI4618DY-T1-GE3

MOSFET 2N-CH 30V 8A/15.2A 8SOIC

Vishay Siliconix

6,109 -
SI4618DY-T1-GE3

数据表

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) 30V 8A, 15.2A 17mOhm @ 8A, 10V 2.5V @ 1mA 44nC @ 10V - 1535pF @ 15V 1.98W, 4.16W 8-SOIC -55°C ~ 150°C (TJ) Surface Mount - -
SI5997DU-T1-GE3

SI5997DU-T1-GE3

MOSFET 2P-CH 30V 6A PPAK CHIPFET

Vishay Siliconix

9,666 -
SI5997DU-T1-GE3

数据表

TrenchFET® PowerPAK® ChipFET™ Dual Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) 30V 6A 54mOhm @ 3A, 10V 2.4V @ 250µA 14.5nC @ 10V Logic Level Gate 430pF @ 15V 10.4W PowerPAK® ChipFet Dual -55°C ~ 150°C (TJ) Surface Mount - -
SI7270DP-T1-GE3

SI7270DP-T1-GE3

MOSFET 2N-CH 30V 8A PPAK SO8

Vishay Siliconix

4,001 -
SI7270DP-T1-GE3

数据表

TrenchFET® PowerPAK® SO-8 Dual Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) 30V 8A 21mOhm @ 8A, 10V 2.8V @ 250µA 21nC @ 10V Logic Level Gate 900pF @ 15V 17.8W PowerPAK® SO-8 Dual -55°C ~ 150°C (TJ) Surface Mount - -
SIA915DJ-T1-GE3

SIA915DJ-T1-GE3

MOSFET 2P-CH 30V 4.5A PPAK8X8

Vishay Siliconix

5,008 -
SIA915DJ-T1-GE3

数据表

TrenchFET® PowerPAK® SC-70-6 Dual Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) 30V 4.5A 87mOhm @ 2.9A, 10V 2.2V @ 250µA 9nC @ 10V Logic Level Gate 275pF @ 15V 6.5W PowerPAK® SC-70-6 Dual -55°C ~ 150°C (TJ) Surface Mount - -
SIA920DJ-T1-GE3

SIA920DJ-T1-GE3

MOSFET 2N-CH 8V 4.5A PPAK8X8

Vishay Siliconix

3,036 -
SIA920DJ-T1-GE3

数据表

TrenchFET® PowerPAK® SC-70-6 Dual Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) 8V 4.5A 27mOhm @ 5.3A, 4.5V 700mV @ 250µA 7.5nC @ 4.5V Logic Level Gate 470pF @ 4V 7.8W PowerPAK® SC-70-6 Dual -55°C ~ 150°C (TJ) Surface Mount - -
SQJ962EP-T1-GE3

SQJ962EP-T1-GE3

MOSFET 2N-CH 60V 8A PPAK SO8

Vishay Siliconix

6,157 -
SQJ962EP-T1-GE3

数据表

TrenchFET® PowerPAK® SO-8 Dual Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) 60V 8A 60mOhm @ 4.3A, 10V 2.5V @ 250µA 14nC @ 10V Logic Level Gate 475pF @ 25V 25W PowerPAK® SO-8 Dual -55°C ~ 175°C (TJ) Surface Mount Automotive AEC-Q101
IRF3575DTRPBF

IRF3575DTRPBF

MOSFET 2N-CH 25V 303A 32QFN

Infineon Technologies

3,680 -
IRF3575DTRPBF

数据表

- 32-PowerWFQFN Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) 25V 303A (Tc) - - - - - - 32-PQFN (6x6) - Surface Mount - -
IRFH4255DTRPBF

IRFH4255DTRPBF

MOSFET 2N-CH 25V 64A/105A PQFN

Infineon Technologies

5,927 -
IRFH4255DTRPBF

数据表

HEXFET® 8-PowerVDFN Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) 25V 64A, 105A 3.2mOhm @ 30A, 10V 2.1V @ 35µA 15nC @ 4.5V Logic Level Gate 1314pF @ 13V 31W, 38W PQFN (5x6) -55°C ~ 150°C (TJ) Surface Mount - -
SIZ914DT-T1-GE3

SIZ914DT-T1-GE3

MOSFET 2N-CH 30V 16A 8POWERPAIR

Vishay Siliconix

8,596 -
SIZ914DT-T1-GE3

数据表

TrenchFET® 8-PowerWDFN Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) 30V 16A, 40A 6.4mOhm @ 19A, 10V 2.4V @ 250µA 26nC @ 10V Logic Level Gate 1208pF @ 15V 22.7W, 100W 8-PowerPair® -55°C ~ 150°C (TJ) Surface Mount - -
FDZ1416NZ

FDZ1416NZ

MOSFET 2N-CH 4WLCSP

onsemi

7,202 -
FDZ1416NZ

数据表

PowerTrench® 4-XFBGA, WLCSP Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Common Drain - - - 1.3V @ 250µA 17nC @ 4.5V - - 500mW 4-WLCSP (1.6x1.4) -55°C ~ 150°C (TJ) Surface Mount - -
IRFHE4250DTRPBF

IRFHE4250DTRPBF

MOSFET 2N-CH 25V 86A/303A 32QFN

Infineon Technologies

8,220 -
IRFHE4250DTRPBF

数据表

FASTIRFET™ 32-PowerWFQFN Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) 25V 86A, 303A 2.75mOhm @ 27A, 10V, 0.9mOhm @ 27A, 10V 2.1V @ 35µA 20nC @ 4.5V Logic Level Gate 1735pF @ 13V 156W 32-PQFN (6x6) -55°C ~ 150°C (TJ) Surface Mount - -
IRL6297SDTRPBF

IRL6297SDTRPBF

MOSFET 2N-CH 20V 15A DIRECTFETSA

Infineon Technologies

9,495 -
IRL6297SDTRPBF

数据表

HEXFET® DirectFET™ Isometric SA Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) 20V 15A 4.9mOhm @ 15A, 4.5V 1.1V @ 35µA 54nC @ 10V Logic Level Gate 2245pF @ 10V 1.7W DIRECTFET™ SA -40°C ~ 150°C (TJ) Surface Mount - -
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