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场效应晶体管(FET)、MOSFET 阵列

制造商 系列 封装/外壳 包装 产品状态 技术 配置 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs FET 特性 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 供应商设备封装 工作温度 安装类型 等级 认证

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 配置 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs FET 特性 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 供应商设备封装 工作温度 安装类型 等级 认证
ALD1102APAL

ALD1102APAL

MOSFET 2P-CH 10.6V 8PDIP

Advanced Linear Devices Inc.

8,400 -
ALD1102APAL

数据表

- 8-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Matched Pair 10.6V - 270Ohm @ 5V 1.2V @ 10µA - - - 500mW 8-PDIP 0°C ~ 70°C (TJ) Through Hole - -
TC8020K6-G-M937

TC8020K6-G-M937

MOSFET 6N/6P-CH 200V 56QFN

Microchip Technology

2,429 -
TC8020K6-G-M937

数据表

- 56-VFQFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) 6 N and 6 P-Channel 200V - 8Ohm @ 1A, 10V 2.4V @ 1mA - - 50pF @ 25V - 56-QFN (8x8) -55°C ~ 150°C (TJ) Surface Mount - -
SMA5113

SMA5113

MOSFET 4N-CH 450V 7A 12SIP

Sanken Electric USA Inc.

8,945 -
SMA5113

数据表

- 12-SIP Tube Active MOSFET (Metal Oxide) 4 N-Channel 450V 7A (Ta) 1.1Ohm @ 3.5A, 10V 4V @ 1mA - - 720pF @ 10V 4W (Ta), 35W (Tc) 12-SIP 150°C Through Hole - -
FMP76-01T

FMP76-01T

MOSFET N/P-CH 100V 54A I4-PAC

IXYS

3,439 -
FMP76-01T

数据表

- ISOPLUSi5-PAK™ Tube Obsolete MOSFET (Metal Oxide) N and P-Channel, Common Drain 100V 54A (Tc), 62A (Tc) 24mOhm @ 38A, 10V, 11mOhm @ 25A, 10V 4V @ 250µA, 4.5V @ 250µA 197nC @ 10V, 104nC @ 10V - 1370pF @ 25V, 5080pF @ 25V 89W, 132W ISOPLUS i4-PAC™ -55°C ~ 150°C (TJ) Through Hole - -
IRF7509TR

IRF7509TR

MOSFET N/P-CH 30V 2.7A/2A MICRO8

Infineon Technologies

4,361 -
IRF7509TR

数据表

HEXFET® 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) N and P-Channel 30V 2.7A, 2A 110mOhm @ 1.4A, 10V 1V @ 250µA 12nC @ 10V Logic Level Gate 210pF @ 25V 1.25W Micro8™ -55°C ~ 150°C (TJ) Surface Mount - -
FMP26-02P

FMP26-02P

MOSFET N/P-CH 200V 26A I4-PAC

IXYS

9,487 -
FMP26-02P

数据表

Polar™ i4-Pac™-5 Tube Obsolete MOSFET (Metal Oxide) N and P-Channel 200V 26A, 17A 60mOhm @ 25A, 10V 5V @ 250µA 70nC @ 10V - 2720pF @ 25V 125W ISOPLUS i4-PAC™ -55°C ~ 150°C (TJ) Through Hole - -
FMP36-015P

FMP36-015P

MOSFET N/P-CH 150V 36A I4-PAC

IXYS

8,354 -
FMP36-015P

数据表

Polar™ i4-Pac™-5 Tube Obsolete MOSFET (Metal Oxide) N and P-Channel 150V 36A, 22A 40mOhm @ 31A, 10V 5.5V @ 250µA 70nC @ 10V - 2250pF @ 25V 125W ISOPLUS i4-PAC™ -55°C ~ 150°C (TJ) Through Hole - -
IRF7501TR

IRF7501TR

MOSFET 2N-CH 20V 2.4A MICRO8

Infineon Technologies

3,307 -
IRF7501TR

数据表

- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Cut Tape (CT) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) 20V 2.4A 135mOhm @ 1.7A, 4.5V 700mV @ 250µA 8nC @ 4.5V Logic Level Gate 260pF @ 15V 1.25W Micro8™ - Surface Mount - -
IRF7507TR

IRF7507TR

MOSFET N/P-CH 20V 2.4A MICRO8

Infineon Technologies

5,475 -
IRF7507TR

数据表

- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Cut Tape (CT) Obsolete MOSFET (Metal Oxide) N and P-Channel 20V 2.4A, 1.7A 140mOhm @ 1.7A, 4.5V 700mV @ 250µA 8nC @ 4.5V Logic Level Gate 260pF @ 15V 1.25W Micro8™ - Surface Mount - -
IRF7503TR

IRF7503TR

MOSFET 2N-CH 30V 2.4A MICRO8

Infineon Technologies

7,454 -
IRF7503TR

数据表

- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Cut Tape (CT) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) 30V 2.4A 135mOhm @ 1.7A, 10V 1V @ 250µA 12nC @ 10V Logic Level Gate 210pF @ 25V 1.25W Micro8™ - Surface Mount - -
IXTL2X180N10T

IXTL2X180N10T

MOSFET 2N-CH 100V 100A I5-PAK

Littelfuse Inc.

2,847 -
IXTL2X180N10T

数据表

Trench ISOPLUSi5-PAK™ Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) 100V 100A 7.4mOhm @ 50A, 10V 4.5V @ 250µA 151nC @ 10V - 6900pF @ 25V 150W ISOPLUSi5-Pak™ -55°C ~ 175°C (TJ) Through Hole - -
FMM50-025TF

FMM50-025TF

MOSFET 2N-CH 250V 30A I4-PAC

IXYS

5,874 -
FMM50-025TF

数据表

HiPerFET™ i4-Pac™-5 Tube Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) 250V 30A 50mOhm @ 25A, 10V 4.5V @ 250µA 78nC @ 10V - 4000pF @ 25V 125W ISOPLUS i4-PAC™ -55°C ~ 150°C (TJ) Through Hole - -
FMM60-02TF

FMM60-02TF

MOSFET 2N-CH 200V 33A I4-PAC

IXYS

2,827 -
FMM60-02TF

数据表

HiPerFET™ i4-Pac™-5 Tube Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) 200V 33A 40mOhm @ 30A, 10V 4.5V @ 250µA 90nC @ 10V - 3700pF @ 25V 125W ISOPLUS i4-PAC™ -55°C ~ 150°C (TJ) Through Hole - -
GWM100-01X1-SMD

GWM100-01X1-SMD

MOSFET 6N-CH 100V 90A ISOPLUS

IXYS

2,514 -
GWM100-01X1-SMD

数据表

- 17-SMD, Gull Wing Tube Obsolete MOSFET (Metal Oxide) 6 N-Channel (3-Phase Bridge) 100V 90A 8.5mOhm @ 80A, 10V 4.5V @ 250µA 90nC @ 10V - - - ISOPLUS-DIL™ -55°C ~ 175°C (TJ) Surface Mount - -
GWM120-0075P3

GWM120-0075P3

MOSFET 6N-CH 75V 118A ISOPLUS

IXYS

2,092 -
GWM120-0075P3

数据表

- 17-SMD, Flat Leads Tube Obsolete MOSFET (Metal Oxide) 6 N-Channel (3-Phase Bridge) 75V 118A 5.5mOhm @ 60A, 10V 4V @ 1mA 100nC @ 10V - - - ISOPLUS-DIL™ -55°C ~ 175°C (TJ) Surface Mount - -
GWM160-0055P3

GWM160-0055P3

MOSFET 6N-CH 55V 160A ISOPLUS

IXYS

8,916 -
GWM160-0055P3

数据表

- 17-SMD, Flat Leads Tube Obsolete MOSFET (Metal Oxide) 6 N-Channel (3-Phase Bridge) 55V 160A 3mOhm @ 100A, 10V 4V @ 1mA 90nC @ 10V - - - ISOPLUS-DIL™ -40°C ~ 175°C (TJ) Surface Mount - -
GWM100-01X1-SL

GWM100-01X1-SL

MOSFET 6N-CH 100V 90A ISOPLUS

IXYS

4,304 -
GWM100-01X1-SL

数据表

- 17-SMD, Flat Leads Tube Obsolete MOSFET (Metal Oxide) 6 N-Channel (3-Phase Bridge) 100V 90A 8.5mOhm @ 80A, 10V 4.5V @ 250µA 90nC @ 10V - - - ISOPLUS-DIL™ -55°C ~ 175°C (TJ) Surface Mount - -
GWM160-0055X1-SL

GWM160-0055X1-SL

MOSFET 6N-CH 55V 150A ISOPLUS

IXYS

8,773 -
GWM160-0055X1-SL

数据表

- 17-SMD, Flat Leads Tube Obsolete MOSFET (Metal Oxide) 6 N-Channel (3-Phase Bridge) 55V 150A 3.3mOhm @ 100A, 10V 4.5V @ 1mA 105nC @ 10V - - - ISOPLUS-DIL™ -55°C ~ 175°C (TJ) Surface Mount - -
FMM22-05PF

FMM22-05PF

MOSFET 2N-CH 500V 13A I4-PAC

IXYS

4,953 -
FMM22-05PF

数据表

HiPerFET™, PolarHT™ i4-Pac™-5 Tube Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) 500V 13A 270mOhm @ 11A, 10V 5V @ 1mA 50nC @ 10V - 2630pF @ 25V 132W ISOPLUS i4-PAC™ -55°C ~ 150°C (TJ) Through Hole - -
GWM70-01P2

GWM70-01P2

MOSFET 6N-CH 100V 70A ISOPLUS

IXYS

4,448 -
GWM70-01P2

数据表

- 17-SMD, Flat Leads Tube Obsolete MOSFET (Metal Oxide) 6 N-Channel (3-Phase Bridge) 100V 70A 14mOhm @ 35A, 10V 4V @ 1mA 110nC @ 10V - - - ISOPLUS-DIL™ -40°C ~ 175°C (TJ) Surface Mount - -
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