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场效应晶体管（FET）、MOSFET 阵列
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 配置 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | FET 特性 | 输入电容 (Ciss)（最大值）@ Vds | 功率 - 最大值 | 供应商设备封装 | 工作温度 | 安装类型 | 等级 | 认证 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ALD1108ESCLMOSFET 4N-CH 10V 16SOIC |
5,204 | - |
|
数据表 |
EPAD® | 16-SOIC (0.154", 3.90mm Width) | Tube | Not For New Designs | MOSFET (Metal Oxide) | 4 N-Channel, Matched Pair | 10V | - | 500Ohm @ 5V | 1.01V @ 1µA | - | - | 25pF @ 5V | 600mW | 16-SOIC | 0°C ~ 70°C (TJ) | Surface Mount | - | - |
|
ALD110908SALMOSFET 2N-CH 10.6V 8SOIC |
6,783 | - |
|
数据表 |
EPAD® | 8-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Matched Pair | 10.6V | 12mA, 3mA | 500Ohm @ 4.8V | 820mV @ 1µA | - | - | 2.5pF @ 5V | 500mW | 8-SOIC | 0°C ~ 70°C (TJ) | Surface Mount | - | - |
|
|
ALD110914SALMOSFET 2N-CH 10.6V 8SOIC |
8,303 | - |
|
数据表 |
EPAD® | 8-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Matched Pair | 10.6V | 12mA, 3mA | 500Ohm @ 5.4V | 1.42V @ 1µA | - | - | 2.5pF @ 5V | 500mW | 8-SOIC | 0°C ~ 70°C (TJ) | Surface Mount | - | - |
|
SLA5212MOSFET 6N-CH 35V 8A 15ZIP |
3,169 | - |
|
数据表 |
- | 15-SIP Exposed Tab, Formed Leads | Tube | Active | MOSFET (Metal Oxide) | 6 N-Channel (3-Phase Bridge) | 35V | 8A | - | - | - | - | - | - | 15-ZIP | - | Through Hole | - | - |
|
FDMS3604ASMOSFET 2N-CH 30V 13A/23A POWER56 |
4,937 | - |
|
数据表 |
PowerTrench® | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Asymmetrical | 30V | 13A, 23A | 8mOhm @ 13A, 10V | 2.7V @ 250µA | 29nC @ 10V | Logic Level Gate | 1695pF @ 15V | 1W | Power56 | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
|
ALD110808SCLMOSFET 4N-CH 10.6V 16SOIC |
5,177 | - |
|
数据表 |
EPAD® | 16-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 4 N-Channel, Matched Pair | 10.6V | 12mA, 3mA | 500Ohm @ 4.8V | 820mV @ 1µA | - | - | 2.5pF @ 5V | 500mW | 16-SOIC | 0°C ~ 70°C (TJ) | Surface Mount | - | - |
|
SI7983DP-T1-E3MOSFET 2P-CH 20V 7.7A PPAK SO8 |
9,076 | - |
|
数据表 |
TrenchFET® | PowerPAK® SO-8 Dual | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 2 P-Channel (Dual) | 20V | 7.7A | 17mOhm @ 12A, 4.5V | 1V @ 600µA | 74nC @ 4.5V | Logic Level Gate | - | 1.4W | PowerPAK® SO-8 Dual | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
|
ALD114935SALMOSFET 2N-CH 10.6V 8SOIC |
3,849 | - |
|
数据表 |
EPAD® | 8-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Matched Pair | 10.6V | 12mA, 3mA | 540Ohm @ 0V | 3.45V @ 1µA | - | Depletion Mode | 2.5pF @ 5V | 500mW | 8-SOIC | 0°C ~ 70°C (TJ) | Surface Mount | - | - |
|
FDMS7700SMOSFET 2N-CH 30V 12A/22A POWER56 |
6,017 | - |
|
数据表 |
PowerTrench® | 8-PowerWDFN | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 30V | 12A, 22A | 7.5mOhm @ 12A, 10V | 3V @ 250µA | 28nC @ 10V | Logic Level Gate | 1750pF @ 15V | 1W | Power56 | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
FDMD82100MOSFET 2N-CH 100V 7A 12POWER |
8,540 | - |
|
数据表 |
PowerTrench® | 12-PowerWDFN | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 100V | 7A | 19mOhm @ 7A, 10V | 4V @ 250µA | 17nC @ 10V | - | 1070pF @ 50V | 1W | 12-Power3.3x5 | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
WI62120MOSFET 650V 13A 14PQFN |
6,650 | - |
|
数据表 |
WiseGan™ | 14-PowerLDFN | Tray | Active | GaNFET (Gallium Nitride) | - | 650V | 13A | - | 2.2V @ 10mA | 2.75nC @ 6V | - | 92.7pF @ 400V | - | 14-PQFN (6x8) | -40°C ~ 150°C (TJ) | Surface Mount | - | - |
|
SIZF640DT-T1-GE3MOSFET 2N-CH 40V 41A PWRPAIR |
5,632 | - |
|
数据表 |
TrenchFET® Gen IV | 8-PowerDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 40V | 41A (Ta), 159A (Tc) | 1.37mOhm @ 15A, 10V | 2.4V @ 250µA | 106nC @ 10V | - | 5750pF @ 20V | 4.2W (Ta), 62.5W (Tc) | PowerPAIR® 6x5FS | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
SMA5135MOSFET 3N/3P-CH 60V 6A 12SIP |
6,207 | - |
|
数据表 |
- | 12-SIP | Tube | Active | MOSFET (Metal Oxide) | 3 N and 3 P-Channel (3 Phase Inverter) | 60V | 6A (Ta) | 220mOhm @ 3A, 4V, 220mOhm @ 3A, 10V | 2V @ 250µA | - | - | 320pF @ 10V, 790pF @ 10V | 4W (Ta), 29W (Tc) | 12-SIP | 150°C | Through Hole | - | - |
|
|
ALD212902SALMOSFET 2N-CH 10.6V 0.08A 8SOIC |
4,140 | - |
|
数据表 |
EPAD®, Zero Threshold™ | 8-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Matched Pair | 10.6V | 80mA | - | 20mV @ 10µA | - | Logic Level Gate | - | 500mW | 8-SOIC | 0°C ~ 70°C (TJ) | Surface Mount | - | - |
|
|
ALD212904SALMOSFET 2N-CH 10.6V 0.08A 8SOIC |
8,080 | - |
|
数据表 |
EPAD®, Zero Threshold™ | 8-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Matched Pair | 10.6V | 80mA | - | 20mV @ 10µA | - | Logic Level Gate | - | 500mW | 8-SOIC | 0°C ~ 70°C (TJ) | Surface Mount | - | - |
|
|
ALD212908SALMOSFET 2N-CH 10.6V 0.08A 8SOIC |
9,980 | - |
|
数据表 |
EPAD®, Zero Threshold™ | 8-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Matched Pair | 10.6V | 80mA | - | 20mV @ 10µA | - | Logic Level Gate | - | 500mW | 8-SOIC | 0°C ~ 70°C (TJ) | Surface Mount | - | - |
|
ALD110902PALMOSFET 2N-CH 10.6V 8PDIP |
7,660 | - |
|
数据表 |
EPAD® | 8-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Matched Pair | 10.6V | - | 500Ohm @ 4.2V | 220mV @ 1µA | - | - | 2.5pF @ 5V | 500mW | 8-PDIP | 0°C ~ 70°C (TJ) | Through Hole | - | - |
|
|
ALD110904PALMOSFET 2N-CH 10.6V 8PDIP |
6,363 | - |
|
数据表 |
EPAD® | 8-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Matched Pair | 10.6V | 12mA, 3mA | 500Ohm @ 4.4V | 420mV @ 1µA | - | - | 2.5pF @ 5V | 500mW | 8-PDIP | 0°C ~ 70°C (TJ) | Through Hole | - | - |
|
|
ALD111933PALMOSFET 2N-CH 10.6V 8PDIP |
6,835 | - |
|
数据表 |
EPAD® | 8-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Matched Pair | 10.6V | - | 500Ohm @ 5.9V | 3.35V @ 1µA | - | - | 2.5pF @ 5V | 500mW | 8-PDIP | 0°C ~ 70°C (TJ) | Through Hole | - | - |
|
|
ALD114804SCLMOSFET 4N-CH 10.6V 16SOIC |
5,086 | - |
|
数据表 |
EPAD® | 16-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 4 N-Channel, Matched Pair | 10.6V | 12mA, 3mA | 500Ohm @ 3.6V | 360mV @ 1µA | - | Depletion Mode | 2.5pF @ 5V | 500mW | 16-SOIC | 0°C ~ 70°C (TJ) | Surface Mount | - | - |
