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场效应晶体管（FET）、MOSFET 阵列
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 配置 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | FET 特性 | 输入电容 (Ciss)（最大值）@ Vds | 功率 - 最大值 | 供应商设备封装 | 工作温度 | 安装类型 | 等级 | 认证 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GCMX010A120B2B1PMOSFET 2N-CH 1200V 214A SemiQ |
28 | - |
|
数据表 |
- | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | 1200V (1.2kV) | 214A (Tc) | 12mOhm @ 100A, 20V | 4V @ 40mA | 476nC @ 20V | - | 13100pF @ 800V | 750W (Tc) | - | -40°C ~ 175°C (TJ) | Chassis Mount | - | - |
|
|
GCMX080A120B2H1PMOSFET 4N-CH 1200V 27A SemiQ |
13 | - |
|
数据表 |
- | Module | Tray | Active | Silicon Carbide (SiC) | 4 N-Channel (Full Bridge) | 1200V (1.2kV) | 27A (Tc) | 100mOhm @ 20A, 20V | 4V @ 10mA | 56nC @ 20V | - | 1362pF @ 800V | 119W (Tc) | - | -40°C ~ 175°C (TJ) | Chassis Mount | - | - |
|
|
GCMX040A120B2H1PMOSFET 4N-CH 1200V 56A SemiQ |
7 | - |
|
数据表 |
- | Module | Tray | Active | Silicon Carbide (SiC) | 4 N-Channel (Full Bridge) | 1200V (1.2kV) | 56A (Tc) | 52mOhm @ 40A, 20V | 4V @ 10mA | 121nC @ 20V | - | 3200pF @ 800V | 217W (Tc) | - | -40°C ~ 175°C (TJ) | Chassis Mount | - | - |
|
|
GCMX020A120B2B1PMOSFET 2N-CH 1200V 102A SemiQ |
20 | - |
|
数据表 |
- | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | 1200V (1.2kV) | 102A (Tc) | 28mOhm @ 50A, 20V | 4V @ 20mA | 241nC @ 20V | - | 6500pF @ 800V | 385W (Tc) | - | -40°C ~ 175°C (TJ) | Chassis Mount | - | - |
|
|
GCMX040A120B3H1PMOSFET 4N-CH 1200V 53A SemiQ |
17 | - |
|
数据表 |
- | Module | Tray | Active | Silicon Carbide (SiC) | 4 N-Channel (Full Bridge) | 1200V (1.2kV) | 53A (Tc) | 52mOhm @ 40A, 20V | 4V @ 10mA | 125nC @ 20V | - | 3200pF @ 800V | 208W (Tc) | - | -40°C ~ 175°C (TJ) | Chassis Mount | - | - |
|
|
GCMX020A120B2H1PMOSFET 4N-CH 1200V 102A SemiQ |
10 | - |
|
数据表 |
- | Module | Tray | Active | Silicon Carbide (SiC) | 4 N-Channel (Full Bridge) | 1200V (1.2kV) | 102A (Tc) | 28mOhm @ 50A, 20V | 4V @ 20mA | 222nC @ 20V | - | 5600pF @ 800V | 333W (Tc) | - | -40°C ~ 175°C (TJ) | Chassis Mount | - | - |
|
|
GCMX010A120B3B1PMOSFET 2N-CH 1200V 173A SemiQ |
9 | - |
|
数据表 |
- | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | 1200V (1.2kV) | 173A (Tc) | 14mOhm @ 100A, 20V | 4V @ 40mA | 483nC @ 20V | - | 13800pF @ 800V | 577W (Tc) | - | -40°C ~ 175°C (TJ) | Chassis Mount | - | - |
|
|
GCMX020A120B3H1PMOSFET 4N-CH 1200V 93A SemiQ |
4 | - |
|
数据表 |
- | Module | Tray | Active | Silicon Carbide (SiC) | 4 N-Channel (Full Bridge) | 1200V (1.2kV) | 93A (Tc) | 28mOhm @ 50A, 20V | 4V @ 20mA | 250nC @ 20V | - | 6700pF @ 800V | 300W (Tc) | - | -40°C ~ 175°C (TJ) | Chassis Mount | - | - |
|
|
GCMX005A120B3B1PMOSFET 4N-CH 1200V 383A SemiQ |
2 | - |
|
数据表 |
- | Module | Tray | Active | Silicon Carbide (SiC) | 4 N-Channel (Half Bridge) | 1200V (1.2kV) | 383A (Tc) | 7mOhm @ 200A, 20V | 4V @ 80mA | 927nC @ 20V | - | 23500pF @ 800V | 1.154kW (Tc) | - | -40°C ~ 175°C (TJ) | Chassis Mount | - | - |
|
|
GCMX005A120S7B1MOSFET 2N-CH 1200V 348A SemiQ |
20 | - |
|
数据表 |
- | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | 1200V (1.2kV) | 348A (Tc) | 7mOhm @ 200A, 20V | 4V @ 80mA | 978nC @ 20V | - | 29300pF @ 800V | 1.042kW (Tc) | - | -40°C ~ 175°C (TJ) | Chassis Mount | - | - |
