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场效应晶体管(FET)、MOSFET 阵列

制造商 系列 封装/外壳 包装 产品状态 技术 配置 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs FET 特性 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 供应商设备封装 工作温度 安装类型 等级 认证

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 配置 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs FET 特性 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 供应商设备封装 工作温度 安装类型 等级 认证
RFF70N06/3

RFF70N06/3

MOSFET N-CH 60V 25A

Harris Corporation

40 -
RFF70N06/3

数据表

* - Bulk Active - - - - - - - - - - - - - - -
FF45MR12W1M1B11BOMA1

FF45MR12W1M1B11BOMA1

MOSFET 2N-CH 1200V AG-EASY1BM-2

Infineon Technologies

6,317 -
FF45MR12W1M1B11BOMA1

数据表

CoolSiC™+ Module Bulk Obsolete Silicon Carbide (SiC) 2 N-Channel (Dual) 1200V (1.2kV) 25A (Tj) 45mOhm @ 25A, 15V (Typ) 5.55V @ 10mA 62nC @ 15V - 1840pF @ 800V - AG-EASY1BM-2 -40°C ~ 150°C (TJ) Chassis Mount - -
DF23MR12W1M1PB11BPSA1

DF23MR12W1M1PB11BPSA1

MOSFET 2N-CH 1200V 25A AG-EASY1B

Infineon Technologies

24 -
DF23MR12W1M1PB11BPSA1

数据表

EasyPACK™ Module Bulk Obsolete Silicon Carbide (SiC) 2 N-Channel (Dual) 1200V (1.2kV) 25A (Tj) 45mOhm @ 25A, 15V 5.55V @ 10mA 62nC @ 15V - 1840pF @ 800V - AG-EASY1B-2 -40°C ~ 150°C (TJ) Chassis Mount - -
FF23MR12W1M1B11BOMA1

FF23MR12W1M1B11BOMA1

MOSFET 2N-CH 1200V 50A MODULE

Infineon Technologies

246 -
FF23MR12W1M1B11BOMA1

数据表

CoolSiC™+ Module Tray Obsolete Silicon Carbide (SiC) 2 N-Channel (Dual) 1200V (1.2kV) 50A 23mOhm @ 50A, 15V 5.55V @ 20mA 125nC @ 15V - 3950pF @ 800V - Module -40°C ~ 150°C (TJ) Chassis Mount - -
FS45MR12W1M1B11BOMA1

FS45MR12W1M1B11BOMA1

MOSFET 6N-CH 1200V AG-EASY1BM-2

Infineon Technologies

101 -
FS45MR12W1M1B11BOMA1

数据表

CoolSiC™+ Module Tray Obsolete Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) 1200V (1.2kV) 25A (Tj) 45mOhm @ 25A, 15V (Typ) 5.55V @ 10mA 62nC @ 15V - 1840pF @ 800V - AG-EASY1BM-2 -40°C ~ 150°C (TJ) Chassis Mount - -
FF11MR12W1M1PB11BPSA1

FF11MR12W1M1PB11BPSA1

MOSFET 2N-CH 1200V AG-EASY1B

Infineon Technologies

53 -
FF11MR12W1M1PB11BPSA1

数据表

EasyDUAL™ Module Tray Obsolete Silicon Carbide (SiC) 2 N-Channel (Dual) 1200V (1.2kV) 100A (Tj) 11.3mOhm @ 100A, 15V 5.55V @ 40mA 248nC @ 15V - 7360pF @ 800V - AG-EASY1B-2 -40°C ~ 150°C (TJ) Chassis Mount - -
FF6MR12KM1BOSA1

FF6MR12KM1BOSA1

MOSFET 2N-CH 1200V 250A AG-62MM

Infineon Technologies

9,163 -
FF6MR12KM1BOSA1

数据表

CoolSiC™ Module Bulk Obsolete Silicon Carbide (SiC) 2 N-Channel (Half Bridge) 1200V (1.2kV) 250A (Tc) 5.81mOhm @ 250A, 15V 5.15V @ 80mA 496nC @ 15V - 14700pF @ 800V - AG-62MM -40°C ~ 150°C (TJ) Chassis Mount - -
CAS120M12BM2

CAS120M12BM2

MOSFET 2N-CH 1200V 193A MODULE

Wolfspeed, Inc.

117 -
CAS120M12BM2

数据表

Z-Rec® Module Bulk Last Time Buy Silicon Carbide (SiC) 2 N-Channel (Half Bridge) 1200V (1.2kV) 193A (Tc) 16mOhm @ 120A, 20V 2.6V @ 6mA (Typ) 378nC @ 20V - 6470pF @ 800V 925W Module -40°C ~ 150°C (TJ) Chassis Mount - -
BSO4804HUMA2

BSO4804HUMA2

MOSFET 2N-CH 30V 8A 8DSO

Infineon Technologies

8,866 -
BSO4804HUMA2

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) 30V 8A (Ta) 20mOhm @ 8A, 10V 2V @ 30µA 17nC @ 5V Logic Level Gate 870pF @ 25V 2W PG-DSO-8 -55°C ~ 150°C Surface Mount - -
CTLDM304P-M832DS TR

CTLDM304P-M832DS TR

MOSFET 2P-CH 30V 4.2A TLM832DS

Central Semiconductor Corp

2,961 -
CTLDM304P-M832DS TR

数据表

- 8-TDFN Exposed Pad Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) 30V 4.2A 70mOhm @ 4.2A, 10V 1.3V @ 250µA 6.4nC @ 4.5V - 760pF @ 15V 1.65W TLM832DS -55°C ~ 150°C (TJ) Surface Mount - -
G1NP02LLE

G1NP02LLE

MOSFET 20V 1.3A SOT23-6L

Goford Semiconductor

150,000 -
G1NP02LLE

数据表

TrenchFET® SOT-23-6 Tape & Reel (TR) Active MOSFET (Metal Oxide) - 20V 1.3A (Tc), 1.1A (Tc) 210mOhm @ 650mA, 4.5V, 460mOhm @ 500mA, 4.5V 1V @ 250µA, 800mV @ 250µA 1nC @ 4.5V, 1.22nC @ 4.5V - 146pF @ 10V, 177pF @ 10V 1.25W (Tc) SOT-23-6L -55°C ~ 150°C (TJ) Surface Mount - -
NTND31200PZTAG

NTND31200PZTAG

MOSFET P-CH

onsemi

924,421 -
NTND31200PZTAG

数据表

* - Tape & Reel (TR) Active - - - - - - - - - - - - - - -
G4614

G4614

MOSFET N+P-CH 40V/-40V 6A/-7A SO

Goford Semiconductor

4,000 -
G4614

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) - - - 35mOhm @ 3A, 10V, 35mOhm @- 2A, -10V 2.5V @ 250µA 15nC @ 10V, 25nC @ -10V - 523pF @ 20V, 1217pF @ -20V - 8-SOP -55°C ~ 150°C (TJ) Surface Mount - -
G300N04S2

G300N04S2

MOSFET 2N-CH 40V 5.5A 8SOP

Goford Semiconductor

12,000 -
G300N04S2

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel 40V 5.5A (Tc) 30mOhm @ 3A, 10V 2.5V @ 250µA 10nC @ 10V - 522pF @ 20V 1.25W (Tc) 8-SOP -55°C ~ 150°C (TJ) Surface Mount - -
PMCXB1000UEZ

PMCXB1000UEZ

MOSFET 30V

NXP Semiconductors

195,000 -
PMCXB1000UEZ

数据表

* - Bulk Active - - - - - - - - - - - - - - -
NVJD4152PT1G

NVJD4152PT1G

MOSFET 2P-CH 20V 0.88A SC88

onsemi

34,274 -
NVJD4152PT1G

数据表

- 6-TSSOP, SC-88, SOT-363 Bulk Active MOSFET (Metal Oxide) 2 P-Channel 20V 880mA (Ta) 260mOhm @ 880mA, 4.5V 1.2V @ 250µA 2.2nC @ 4.5V - 155pF @ 20V 272mW (Ta) SC-88/SC70-6/SOT-363 -55°C ~ 150°C (TJ) Surface Mount Automotive AEC-Q101
6706A

6706A

MOSFET 30V 6.5A 8SOP

Goford Semiconductor

20,000 -
6706A

数据表

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) - 30V 6.5A (Tc), 5A (Tc) 30mOhm @ 5A, 10V, 60mOhm @ 4A, 10V 2V @ 250µA, 2.5V @ 250µA 5.2nC @ 10V, 9.2nC @ 10V - 255pF @ 15V, 520pF @ 15V 2W (Tc) 8-SOP -55°C ~ 150°C (TJ) Surface Mount - -
G4953S

G4953S

MOSFET 2P-CH 30V 5A 8SOP

Goford Semiconductor

20,000 -
G4953S

数据表

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) - 30V 5A (Tc) 45mOhm @ 5A, 10V 3V @ 250µA 11nC @ 10V - 520pF @ 15V 1.6W (Tc) 8-SOP -55°C ~ 150°C (TJ) Surface Mount - -
G800N06S2

G800N06S2

MOSFET 2N-CH 60V 3A 8SOP

Goford Semiconductor

8,000 -
G800N06S2

数据表

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) - 60V 3A (Tc) 80mOhm @ 3A, 10V 1.2V @ 250µA 6nC @ 10V - 458pF @ 30V 1.7W (Tc) 8-SOP -55°C ~ 150°C (TJ) Surface Mount - -
G1K8P06S2

G1K8P06S2

MOSFET 60V 3.2A 8SOP

Goford Semiconductor

4,000 -
G1K8P06S2

数据表

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) - 60V 3.2A (Tc) 170mOhm @ 1A, 10V 2.5V @ 250µA 11.3nC @ 10V - 594pF @ 30V 2W (Tc) 8-SOP -55°C ~ 150°C (TJ) Surface Mount - -
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