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桥式整流器

制造商 系列 封装/外壳 包装 产品状态 二极管类型 技术 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 电流 - 反向漏电 @ Vr 工作温度 等级 电压 - 反向峰值(最大值) 认证 安装类型 供应商设备封装

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 二极管类型 技术 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 电流 - 反向漏电 @ Vr 工作温度 等级 电压 - 反向峰值(最大值) 认证 安装类型 供应商设备封装
MSDM50-12

MSDM50-12

BRIDGE RECT 3P 1.2KV 50A M2-1

Microsemi Corporation

6,454 -
MSDM50-12

数据表

- Module Bulk Obsolete Three Phase Standard 50 A 1.8 V @ 150 A 300 µA @ 1200 V -40°C ~ 150°C (TJ) - 1.2 kV - Chassis Mount M2-1
MSDM50-18

MSDM50-18

BRIDGE RECT 3P 1.8KV 50A M2-1

Microsemi Corporation

5,277 -
MSDM50-18

数据表

- Module Bulk Obsolete Three Phase Standard 50 A 1.8 V @ 150 A 300 µA @ 1800 V -40°C ~ 150°C (TJ) - 1.8 kV - Chassis Mount M2-1
MSDM75-16

MSDM75-16

BRIDGE RECT 3P 1.6KV 75A M2-1

Microsemi Corporation

5,024 -
MSDM75-16

数据表

- Module Bulk Obsolete Three Phase Standard 75 A 1.6 V @ 150 A 500 µA @ 1600 V -40°C ~ 150°C (TJ) - 1.6 kV - Chassis Mount M2-1
MSDM75-18

MSDM75-18

BRIDGE RECT 3P 1.8KV 75A M2-1

Microsemi Corporation

7,290 -
MSDM75-18

数据表

- Module Bulk Obsolete Three Phase Standard 75 A 1.6 V @ 150 A 500 µA @ 1800 V -40°C ~ 150°C (TJ) - 1.8 kV - Chassis Mount M2-1
APT10DC120HJ

APT10DC120HJ

BRIDGE RECT 1P 1.2KV 10A SOT-227

Microsemi Corporation

3,376 -
APT10DC120HJ

数据表

- SOT-227-4, miniBLOC Bulk Active Single Phase Silicon Carbide Schottky 10 A 1.8 V @ 10 A 200 µA @ 1200 V -55°C ~ 175°C (TJ) - 1.2 kV - Chassis Mount SOT-227
VJ848M

VJ848M

BRIDGE RECT 1PHASE 800V 10A VJ

Microsemi Corporation

9,014 -
VJ848M

数据表

- 4-Square, VJ Bulk Active Single Phase Standard 10 A 1.3 V @ 1 A 5 µA @ 800 V -55°C ~ 175°C (TJ) - 800 V - Through Hole VJ
G3SBA20L-M3/45

G3SBA20L-M3/45

BRIDGE RECT 1PHASE 200V 2.3A GBU

Vishay General Semiconductor - Diodes Division

8,939 -
G3SBA20L-M3/45

数据表

- 4-SIP, GBU Tube Obsolete Single Phase Standard 2.3 A 1 V @ 2 A 5 µA @ 200 V -55°C ~ 150°C (TJ) - 200 V - Through Hole GBU
G3SBA20L-M3/51

G3SBA20L-M3/51

BRIDGE RECT 1PHASE 200V 2.3A GBU

Vishay General Semiconductor - Diodes Division

7,656 -
G3SBA20L-M3/51

数据表

- 4-SIP, GBU Tray Obsolete Single Phase Standard 2.3 A 1 V @ 2 A 5 µA @ 200 V -55°C ~ 150°C (TJ) - 200 V - Through Hole GBU
G3SBA60L-M3/45

G3SBA60L-M3/45

BRIDGE RECT 1PHASE 600V 2.3A GBU

Vishay General Semiconductor - Diodes Division

9,463 -
G3SBA60L-M3/45

数据表

- 4-SIP, GBU Tube Obsolete Single Phase Standard 2.3 A 1 V @ 2 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - 600 V - Through Hole GBU
G3SBA60L-M3/51

G3SBA60L-M3/51

BRIDGE RECT 1PHASE 600V 2.3A GBU

Vishay General Semiconductor - Diodes Division

6,346 -
G3SBA60L-M3/51

数据表

- 4-SIP, GBU Tray Obsolete Single Phase Standard 2.3 A 1 V @ 2 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - 600 V - Through Hole GBU
G5SBA20L-M3/45

G5SBA20L-M3/45

BRIDGE RECT 1PHASE 200V 2.8A GBU

Vishay General Semiconductor - Diodes Division

9,341 -
G5SBA20L-M3/45

数据表

- 4-SIP, GBU Tube Obsolete Single Phase Standard 2.8 A 1.05 V @ 3 A 5 µA @ 200 V - - 200 V - Through Hole GBU
G5SBA60L-M3/45

G5SBA60L-M3/45

BRIDGE RECT 1PHASE 600V 2.8A GBU

Vishay General Semiconductor - Diodes Division

9,670 -
G5SBA60L-M3/45

数据表

- 4-SIP, GBU Tube Obsolete Single Phase Standard 2.8 A 1.05 V @ 3 A 5 µA @ 600 V - - 600 V - Through Hole GBU
CD2320-B1200

CD2320-B1200

BRIDGE RECT 1PHASE 200V 1A 2320

Bourns Inc.

2,325 -
CD2320-B1200

数据表

- Chip, Concave Terminals Tape & Reel (TR) Obsolete Single Phase Schottky 1 A 1 V @ 1 A 5 µA @ 200 V -55°C ~ 175°C (TJ) - 200 V - Surface Mount 2320
CD2320-B1800

CD2320-B1800

BRIDGE RECT 1PHASE 1KV 1A 2320

Bourns Inc.

4,614 -
CD2320-B1800

数据表

- Chip, Concave Terminals Tape & Reel (TR) Obsolete Single Phase Schottky 1 A 1 V @ 1 A 5 µA @ 800 V -55°C ~ 175°C (TJ) - 1 kV - Surface Mount 2320
MBL106S-M3/I

MBL106S-M3/I

BRIDGE RECT 1PHASE 600V 1A 4-SMD

Vishay General Semiconductor - Diodes Division

6,099 -
MBL106S-M3/I

数据表

- 4-SMD, Gull Wing Tape & Reel (TR) Obsolete Single Phase Standard 1 A 950 mV @ 400 mA 5 µA @ 600 V -55°C ~ 150°C (TJ) - 600 V - Surface Mount 4-SMD
2KBP02M-M4/51

2KBP02M-M4/51

BRIDGE RECT 1PHASE 200V 2A KBPM

Vishay General Semiconductor - Diodes Division

6,654 -
2KBP02M-M4/51

数据表

- 4-SIP, KBPM Tray Obsolete Single Phase Standard 2 A 1.1 V @ 3.14 A 5 µA @ 200 V -55°C ~ 165°C (TJ) - 200 V - Through Hole KBPM
2KBP04M-M4/51

2KBP04M-M4/51

BRIDGE RECT 1PHASE 400V 2A KBPM

Vishay General Semiconductor - Diodes Division

4,972 -
2KBP04M-M4/51

数据表

- 4-SIP, KBPM Tray Obsolete Single Phase Standard 2 A 1.1 V @ 3.14 A 5 µA @ 400 V -55°C ~ 165°C (TJ) - 400 V - Through Hole KBPM
2KBP06M-M4/51

2KBP06M-M4/51

BRIDGE RECT 1PHASE 600V 2A KBPM

Vishay General Semiconductor - Diodes Division

2,897 -
2KBP06M-M4/51

数据表

- 4-SIP, KBPM Tray Obsolete Single Phase Standard 2 A 1.1 V @ 3.14 A 5 µA @ 600 V -55°C ~ 165°C (TJ) - 600 V - Through Hole KBPM
2KBP10M-M4/51

2KBP10M-M4/51

BRIDGE RECT 1PHASE 1KV 2A KBPM

Vishay General Semiconductor - Diodes Division

5,573 -
2KBP10M-M4/51

数据表

- 4-SIP, KBPM Tray Obsolete Single Phase Standard 2 A 1.1 V @ 3.14 A 5 µA @ 1000 V -55°C ~ 165°C (TJ) - 1 kV - Through Hole KBPM
3KBP01M-M4/51

3KBP01M-M4/51

BRIDGE RECT 1PHASE 50V 3A KBPM

Vishay General Semiconductor - Diodes Division

9,171 -
3KBP01M-M4/51

数据表

- 4-SIP, KBPM Tray Obsolete Single Phase Standard 3 A 1.05 V @ 3 A 5 µA @ 100 V -55°C ~ 150°C (TJ) - 50 V - Through Hole KBPM
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