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桥式整流器

制造商 系列 封装/外壳 包装 产品状态 二极管类型 技术 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 电流 - 反向漏电 @ Vr 工作温度 等级 电压 - 反向峰值(最大值) 认证 安装类型 供应商设备封装

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 二极管类型 技术 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 电流 - 反向漏电 @ Vr 工作温度 等级 电压 - 反向峰值(最大值) 认证 安装类型 供应商设备封装
GBL10-M3/51

GBL10-M3/51

BRIDGE RECT 1PHASE 1KV 4A GBL

Vishay General Semiconductor - Diodes Division

8,515 -
GBL10-M3/51

数据表

- 4-SIP, GBL Tray Discontinued at Digi-Key Single Phase Standard 4 A 1.1 V @ 4 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) - 1 kV - Through Hole GBL
GBL01-M3/45

GBL01-M3/45

BRIDGE RECT 1PHASE 100V 4A GBL

Vishay General Semiconductor - Diodes Division

8,121 -
GBL01-M3/45

数据表

- 4-SIP, GBL Tube Discontinued at Digi-Key Single Phase Standard 4 A 1.1 V @ 4 A 5 µA @ 100 V -55°C ~ 150°C (TJ) - 100 V - Through Hole GBL
GBL02-M3/45

GBL02-M3/45

BRIDGE RECT 1PHASE 200V 4A GBL

Vishay General Semiconductor - Diodes Division

5,062 -
GBL02-M3/45

数据表

- 4-SIP, GBL Tube Discontinued at Digi-Key Single Phase Standard 4 A 1.1 V @ 4 A 5 µA @ 200 V -55°C ~ 150°C (TJ) - 200 V - Through Hole GBL
GBL06-M3/45

GBL06-M3/45

BRIDGE RECT 1PHASE 600V 4A GBL

Vishay General Semiconductor - Diodes Division

6,946 -
GBL06-M3/45

数据表

- 4-SIP, GBL Tube Discontinued at Digi-Key Single Phase Standard 4 A 1.1 V @ 4 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - 600 V - Through Hole GBL
GBL08-M3/45

GBL08-M3/45

BRIDGE RECT 1PHASE 800V 4A GBL

Vishay General Semiconductor - Diodes Division

9,546 -
GBL08-M3/45

数据表

- 4-SIP, GBL Tube Discontinued at Digi-Key Single Phase Standard 4 A 1 V @ 2 A 10 µA @ 800 V -55°C ~ 150°C (TJ) - 800 V - Through Hole GBL
GBL10-M3/45

GBL10-M3/45

BRIDGE RECT 1PHASE 1KV 4A GBL

Vishay General Semiconductor - Diodes Division

8,892 -
GBL10-M3/45

数据表

- 4-SIP, GBL Tube Discontinued at Digi-Key Single Phase Standard 4 A 1.1 V @ 4 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) - 1 kV - Through Hole GBL
G5SBA60-E3/51

G5SBA60-E3/51

BRIDGE RECT 1PHASE 600V 2.8A GBU

Vishay General Semiconductor - Diodes Division

8,409 -
G5SBA60-E3/51

数据表

- 4-SIP, GBU Bulk Active Single Phase Standard 2.8 A 1.05 V @ 3 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - 600 V - Through Hole GBU
G5SBA80-E3/51

G5SBA80-E3/51

BRIDGE RECT 1PHASE 800V 2.8A GBU

Vishay General Semiconductor - Diodes Division

9,935 -
G5SBA80-E3/51

数据表

- 4-SIP, GBU Bulk Active Single Phase Standard 2.8 A 1.05 V @ 3 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - 800 V - Through Hole GBU
G5SBA60-E3/45

G5SBA60-E3/45

BRIDGE RECT 1PHASE 600V 2.8A GBU

Vishay General Semiconductor - Diodes Division

9,686 -
G5SBA60-E3/45

数据表

- 4-SIP, GBU Tube Active Single Phase Standard 2.8 A 1.05 V @ 3 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - 600 V - Through Hole GBU
G5SBA80-E3/45

G5SBA80-E3/45

BRIDGE RECT 1PHASE 800V 2.8A GBU

Vishay General Semiconductor - Diodes Division

6,691 -
G5SBA80-E3/45

数据表

- 4-SIP, GBU Tube Active Single Phase Standard 2.8 A 1.05 V @ 3 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - 800 V - Through Hole GBU
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