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桥式整流器

制造商 系列 封装/外壳 包装 产品状态 二极管类型 技术 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 电流 - 反向漏电 @ Vr 工作温度 等级 电压 - 反向峰值(最大值) 认证 安装类型 供应商设备封装

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 二极管类型 技术 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 电流 - 反向漏电 @ Vr 工作温度 等级 电压 - 反向峰值(最大值) 认证 安装类型 供应商设备封装
PB810-BP

PB810-BP

BRIDGE RECT 1PHASE 1KV 8A PB-10

Micro Commercial Co

7,194 -
PB810-BP

数据表

- 4-Square, PB-10 Bulk Active Single Phase Standard 8 A 1.1 V @ 4 A 10 µA @ 1000 V -55°C ~ 125°C - 1 kV - Through Hole PB-10
PB86-BP

PB86-BP

BRIDGE RECT 1PHASE 600V 8A PB-10

Micro Commercial Co

4,898 -
PB86-BP

数据表

- 4-Square, PB-10 Bulk Active Single Phase Standard 8 A 1.1 V @ 4 A 10 µA @ 600 V -55°C ~ 125°C - 600 V - Through Hole PB-10
GBU806-K

GBU806-K

BRIDGE RECT 1PHASE 800V 8A GBU

Taiwan Semiconductor Corporation

8,909 -
GBU806-K

数据表

- 4-ESIP, GBU Tube Active Single Phase Standard 8 A 1.1 V @ 8 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - 800 V - Through Hole GBU
GBU805-K

GBU805-K

BRIDGE RECT 1PHASE 600V 8A GBU

Taiwan Semiconductor Corporation

3,849 -
GBU805-K

数据表

- 4-ESIP, GBU Tube Active Single Phase Standard 8 A 1.1 V @ 8 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - 600 V - Through Hole GBU
GBU804-K

GBU804-K

BRIDGE RECT 1PHASE 400V 8A GBU

Taiwan Semiconductor Corporation

6,519 -
GBU804-K

数据表

- 4-ESIP, GBU Tube Active Single Phase Standard 8 A 1.1 V @ 8 A 5 µA @ 400 V -55°C ~ 150°C (TJ) - 400 V - Through Hole GBU
GBU807-K

GBU807-K

BRIDGE RECT 1PHASE 1KV 8A GBU

Taiwan Semiconductor Corporation

3,049 -
GBU807-K

数据表

- 4-ESIP, GBU Tube Active Single Phase Standard 8 A 1.1 V @ 8 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) - 1 kV - Through Hole GBU
GBU601H

GBU601H

BRIDGE RECT 1PHASE 50V 6A GBU

Taiwan Semiconductor Corporation

9,690 -
GBU601H

数据表

- 4-ESIP, GBU Tube Active Single Phase Standard 6 A 1.1 V @ 6 A 5 µA @ 50 V -55°C ~ 150°C (TJ) Automotive 50 V AEC-Q101 Through Hole GBU
GBU602H

GBU602H

BRIDGE RECT 1PHASE 100V 6A GBU

Taiwan Semiconductor Corporation

5,304 -
GBU602H

数据表

- 4-ESIP, GBU Tube Active Single Phase Standard 6 A 1.1 V @ 6 A 5 µA @ 100 V -55°C ~ 150°C (TJ) Automotive 100 V AEC-Q101 Through Hole GBU
GBU603H

GBU603H

BRIDGE RECT 1PHASE 200V 6A GBU

Taiwan Semiconductor Corporation

3,451 -
GBU603H

数据表

- 4-ESIP, GBU Tube Active Single Phase Standard 6 A 1.1 V @ 6 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Automotive 200 V AEC-Q101 Through Hole GBU
G3SBA80-E3/45

G3SBA80-E3/45

BRIDGE RECT 1PHASE 800V 2.3A GBU

Vishay General Semiconductor - Diodes Division

7,342 -
G3SBA80-E3/45

数据表

- 4-SIP, GBU Tube Active Single Phase Standard 2.3 A 1 V @ 2 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - 800 V - Through Hole GBU
GBJ6D

GBJ6D

BRIDGE RECT 1PHASE 200V 6A GBJ

GeneSiC Semiconductor

8,357 -
GBJ6D

数据表

- 4-SIP, GBJ Bulk Active Single Phase Standard 6 A 1.05 V @ 3 A 5 µA @ 200 V -55°C ~ 150°C (TJ) - 200 V - Through Hole GBJ
GBJ6B

GBJ6B

BRIDGE RECT 1PHASE 100V 6A GBJ

GeneSiC Semiconductor

9,761 -
GBJ6B

数据表

- 4-SIP, GBJ Bulk Active Single Phase Standard 6 A 1.05 V @ 3 A 5 µA @ 100 V -55°C ~ 150°C (TJ) - 100 V - Through Hole GBJ
GBJ6M

GBJ6M

BRIDGE RECT 1PHASE 1KV 6A GBJ

GeneSiC Semiconductor

5,733 -
GBJ6M

数据表

- 4-SIP, GBJ Bulk Active Single Phase Standard 6 A 1.05 V @ 3 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) - 1 kV - Through Hole GBJ
GBJ6J

GBJ6J

BRIDGE RECT 1PHASE 600V 6A GBJ

GeneSiC Semiconductor

5,385 -
GBJ6J

数据表

- 4-SIP, GBJ Bulk Active Single Phase Standard 6 A 1.05 V @ 3 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - 600 V - Through Hole GBJ
GBJ6K

GBJ6K

BRIDGE RECT 1PHASE 800V 6A GBJ

GeneSiC Semiconductor

7,726 -
GBJ6K

数据表

- 4-SIP, GBJ Bulk Active Single Phase Standard 6 A 1.05 V @ 3 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - 800 V - Through Hole GBJ
GBJ6G

GBJ6G

BRIDGE RECT 1PHASE 400V 6A GBJ

GeneSiC Semiconductor

4,473 -
GBJ6G

数据表

- 4-SIP, GBJ Bulk Active Single Phase Standard 6 A 1.05 V @ 3 A 5 µA @ 400 V -55°C ~ 150°C (TJ) - 400 V - Through Hole GBJ
GBLA005-E3/45

GBLA005-E3/45

BRIDGE RECT 1PHASE 50V 3A GBL

Vishay General Semiconductor - Diodes Division

5,189 -
GBLA005-E3/45

数据表

- 4-SIP, GBL Tube Discontinued at Digi-Key Single Phase Standard 3 A 1.1 V @ 4 A 5 µA @ 50 V -55°C ~ 150°C (TJ) - 50 V - Through Hole GBL
GBLA01-E3/45

GBLA01-E3/45

BRIDGE RECT 1PHASE 100V 3A GBL

Vishay General Semiconductor - Diodes Division

2,526 -
GBLA01-E3/45

数据表

- 4-SIP, GBL Tube Discontinued at Digi-Key Single Phase Standard 3 A 1.1 V @ 4 A 5 µA @ 100 V -55°C ~ 150°C (TJ) - 100 V - Through Hole GBL
GBLA02-E3/45

GBLA02-E3/45

BRIDGE RECT 1PHASE 200V 3A GBL

Vishay General Semiconductor - Diodes Division

3,062 -
GBLA02-E3/45

数据表

- 4-SIP, GBL Tube Discontinued at Digi-Key Single Phase Standard 3 A 1.1 V @ 4 A 5 µA @ 200 V -55°C ~ 150°C (TJ) - 200 V - Through Hole GBL
GBLA04-E3/45

GBLA04-E3/45

BRIDGE RECT 1PHASE 400V 3A GBL

Vishay General Semiconductor - Diodes Division

5,736 -
GBLA04-E3/45

数据表

- 4-SIP, GBL Tube Discontinued at Digi-Key Single Phase Standard 3 A 1 V @ 4 A 5 µA @ 400 V -55°C ~ 150°C (TJ) - 400 V - Through Hole GBL
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