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| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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CD214A-B350LFDIODE SCHOTTKY 50V 3A DO214AC Bourns Inc. |
5,895 | - |
|
数据表 |
- | DO-214AC, SMA | Tape & Reel (TR) | Obsolete | Schottky | 50 V | 700 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 50 V | 250pF @ 4V, 1MHz | 3A | - | - | Surface Mount | DO-214AC (SMA) | -55°C ~ 125°C |
|
BSDH06G65E2DIODE SCHOT SIC 650V 6A TO220-2 Bourns Inc. |
3,000 | - |
|
数据表 |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 650 V | 201pF @ 1V, 1MHz | 6A | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
|
BSDH10G65E2DIODE SIC 650V 10A TO220-2 Bourns Inc. |
2,873 | - |
|
数据表 |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 650 V | 323pF @ 1V, 1MHz | 10A | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
|
BSDH08G65E2DIODE SCHOT SIC 650V 8A TO220-2 Bourns Inc. |
3,000 | - |
|
数据表 |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 267pF @ 1V, 1MHz | 8A | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
|
BSDD06G65E2DIODE SIC 650V 6A TO252 Bourns Inc. |
4,963 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 30 µA @ 650 V | 201pF @ 1V, 1MHz | 6A | - | - | Surface Mount | TO-252 (DPAK) | -55°C ~ 175°C |
|
|
BSDD08G65E2DIODE SCHOT SIC 650V 8A TO252 Bourns Inc. |
5,000 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 267pF @ 1V, 1MHz | 8A | - | - | Surface Mount | TO-252 (DPAK) | -55°C ~ 175°C |
|
|
BSDD05G120E2DIODE SCHOT SIC 1200V 5A TO252 Bourns Inc. |
4,994 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 1.6 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 25 µA @ 1200 V | 260pF @ 1V, 1MHz | 5A | - | - | Surface Mount | TO-252 (DPAK) | -55°C ~ 175°C |
|
|
BSDH10S65E6DIODE SCHOT SIC 650V 10A TO220-2 Bourns Inc. |
2,966 | - |
|
数据表 |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.45 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 500pF @ 1V, 1MHz | 10A | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
|
BSDD10G65E2DIODE SCHOT SIC 650V 10A TO252 Bourns Inc. |
9,660 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 323pF @ 1V, 1MHz | 10A | - | - | Surface Mount | TO-252 (DPAK) | -55°C ~ 175°C |
|
|
BSDH10G120E2DIODE SIC 1200V 10A TO220-2 Bourns Inc. |
2,929 | - |
|
数据表 |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 1.6 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 1200 V | 481pF @ 1V, 1MHz | 10A | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
