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IGBT 模块

制造商 系列 封装/外壳 包装 产品状态 IGBT 类型 配置 电流 - 集电极 (Ic)(最大值) 功率 - 最大值 导通电压 (Vce(on))(最大值)@ Vge, Ic 电流 - 集电极截止(最大值) 输入电容 (Cies) @ Vce 电压 - 集电极发射极击穿(最大值) 输入 NTC 热敏电阻 工作温度 安装类型 供应商设备封装

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结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 IGBT 类型 配置 电流 - 集电极 (Ic)(最大值) 功率 - 最大值 导通电压 (Vce(on))(最大值)@ Vge, Ic 电流 - 集电极截止(最大值) 输入电容 (Cies) @ Vce 电压 - 集电极发射极击穿(最大值) 输入 NTC 热敏电阻 工作温度 安装类型 供应商设备封装
PSDC312E5628406NOSA1

PSDC312E5628406NOSA1

POWER MODULE IGBT

Infineon Technologies

5,614 -
PSDC312E5628406NOSA1

数据表

- - Bulk Obsolete - - - - - - - - - - - - -
6PS04012E4DG36022NOSA1

6PS04012E4DG36022NOSA1

MODULE IGBT

Infineon Technologies

5,372 -
6PS04012E4DG36022NOSA1

数据表

PrimeSTACK™ Module Bulk Obsolete - Full Bridge Inverter 306 A - 2.05V @ 15V, 200A - - 3600 V Standard No -40°C ~ 85°C - -
F59318969D

F59318969D

F59318969D

onsemi

8,017 -
F59318969D

数据表

- - Bulk Obsolete - - - - - - - - - - - - -
FF2MR12KM1H

FF2MR12KM1H

MEDIUM POWER 62MM

Infineon Technologies

5,971 -
FF2MR12KM1H

数据表

- Module Tray Active Trench Field Stop Half Bridge - - - - - 1200 V Standard No - Chassis Mount AG-62MM
VMO440-02FL/13

VMO440-02FL/13

MOSFET

IXYS

3,804 -
VMO440-02FL/13

数据表

- - Bulk Obsolete - - - - - - - - - - - - -
BSM150GB120DN2FE325HOSA1

BSM150GB120DN2FE325HOSA1

IGBT MOD

Infineon Technologies

7,107 -
BSM150GB120DN2FE325HOSA1

数据表

- - Bulk Obsolete - - - - - - - - - - - - -
BSM50GD120DN2B10BOSA1

BSM50GD120DN2B10BOSA1

IGBT MODULE

Infineon Technologies

6,123 -
BSM50GD120DN2B10BOSA1

数据表

- - Bulk Obsolete - - - - - - - - - - - - -
NVG800A75L4DSC2

NVG800A75L4DSC2

IC PWR MOD 750V 800A AHPM15

onsemi

7,294 -
NVG800A75L4DSC2

数据表

- 15-PowerDIP Module (2.441", 62.00mm) Tube Active - Half Bridge Inverter 550 A - 1.6V @ 15V, 600A 1 mA 43000 pF @ 30 V 750 V Standard No -40°C ~ 175°C (TJ) Through Hole AHPM15-CEA
NVG800A75L4DSB2

NVG800A75L4DSB2

MODULE

onsemi

8,103 -
NVG800A75L4DSB2

数据表

- 15-PowerDIP Module (2.827", 71.80mm) Bulk Active - Half Bridge Inverter 800 A - 1.6V @ 15V, 600A 1 mA 43000 pF @ 30 V 750 V Standard No -40°C ~ 175°C (TJ) Through Hole AHPM15-CEC
MSCGLQ75X120CTYZBNMG

MSCGLQ75X120CTYZBNMG

PM-IGBT-SBD-NHPD

Microchip Technology

8,634 -
MSCGLQ75X120CTYZBNMG

数据表

- Module Bulk Active - Three Phase Inverter with Brake 150 A 452 W 2.4V @ 15V, 75A 50 µA 4400 pF @ 25 V 1200 V Three Phase Bridge Rectifier Yes -55°C ~ 175°C (TJ) Chassis Mount -
MSCGLQ100X065CTYZBNMG

MSCGLQ100X065CTYZBNMG

PM-IGBT-SBD-NHPD

Microchip Technology

8,863 -
MSCGLQ100X065CTYZBNMG

数据表

- Module Bulk Active - Three Phase Inverter with Brake 150 A 400 W 2.3V @ 15V, 100A 50 µA 490 pF @ 25 V 650 V Three Phase Bridge Rectifier Yes -55°C ~ 175°C (TJ) Chassis Mount -
VS-GT200SA60UP

VS-GT200SA60UP

IGBT MOD

Vishay General Semiconductor - Diodes Division

8,410 -
VS-GT200SA60UP

数据表

- - Bulk Obsolete - - - - - - - - - - - - -
VS-ENU060Y60U

VS-ENU060Y60U

IGBT MOD

Vishay General Semiconductor - Diodes Division

5,464 -
VS-ENU060Y60U

数据表

- - Bulk Obsolete - - - - - - - - - - - - -
SNXH300B95H3Q2F2PG-N-R

SNXH300B95H3Q2F2PG-N-R

IGBT MODULE

onsemi

8,088 -
SNXH300B95H3Q2F2PG-N-R

数据表

- - Bulk Obsolete - - - - - - - - - - - - -
SNXH300B95H3Q2F2PG-N

SNXH300B95H3Q2F2PG-N

IGBT MODULE

onsemi

6,049 -
SNXH300B95H3Q2F2PG-N

数据表

- - Bulk Obsolete - - - - - - - - - - - - -
XCSNXH300B95H3Q2F2PG-N

XCSNXH300B95H3Q2F2PG-N

IGBT MODULE

onsemi

3,980 -
XCSNXH300B95H3Q2F2PG-N

数据表

- - Bulk Obsolete - - - - - - - - - - - - -
MSCGLQ50X120CTYZBNMG

MSCGLQ50X120CTYZBNMG

PM-IGBT-SBD-6HPD

Microchip Technology

7,755 -
MSCGLQ50X120CTYZBNMG

数据表

- Module Bulk Active - Three Phase Inverter with Brake 90 A 330 W 2.4V @ 15V, 50A 25 µA 2770 pF @ 25 V 1200 V Three Phase Bridge Rectifier Yes -55°C ~ 175°C (TJ) Chassis Mount -
MSCGLQ50X065CTYZBNMG

MSCGLQ50X065CTYZBNMG

PM-IGBT-SBD-6HPD

Microchip Technology

8,835 -
MSCGLQ50X065CTYZBNMG

数据表

- Module Bulk Active - Three Phase Inverter with Brake 70 A 210 W 2.3V @ 15V, 50A 50 µA 3100 pF @ 25 V 650 V Three Phase Bridge Rectifier Yes -55°C ~ 175°C (TJ) Chassis Mount -
MSCSM120XM31RTBL3NG

MSCSM120XM31RTBL3NG

PM-MOSFET-SIC-BL3

Microchip Technology

2,913 -
MSCSM120XM31RTBL3NG

数据表

- Module Bulk Active - Three Phase 79 A 310 W - - 3020 pF @ 1 kV 1200 V Three Phase Bridge Rectifier Yes -55°C ~ 175°C (TJ) Chassis Mount -
MIXA41W1200TED

MIXA41W1200TED

IGBT MODULE

IXYS

2,058 -
MIXA41W1200TED

数据表

- - Bulk Active - - - - - - - - - - - - -
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