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桥式整流器

制造商 系列 封装/外壳 包装 产品状态 二极管类型 技术 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 电流 - 反向漏电 @ Vr 工作温度 等级 电压 - 反向峰值(最大值) 认证 安装类型 供应商设备封装

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 二极管类型 技术 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 电流 - 反向漏电 @ Vr 工作温度 等级 电压 - 反向峰值(最大值) 认证 安装类型 供应商设备封装
GBU4ML-5001M3/45

GBU4ML-5001M3/45

BRIDGE RECT 1PHASE 1KV 3A GBU

Vishay General Semiconductor - Diodes Division

4,446 -
GBU4ML-5001M3/45

数据表

- 4-SIP, GBU Tube Obsolete Single Phase Standard 3 A 1 V @ 4 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) - 1 kV - Through Hole GBU
GBU4ML-7001E3/51

GBU4ML-7001E3/51

BRIDGE RECT 1PHASE 1KV 3A GBU

Vishay General Semiconductor - Diodes Division

2,361 -
GBU4ML-7001E3/51

数据表

- 4-SIP, GBU Tube Obsolete Single Phase Standard 3 A 1 V @ 4 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) - 1 kV - Through Hole GBU
GBU4ML-7001M3/51

GBU4ML-7001M3/51

BRIDGE RECT 1PHASE 1KV 3A GBU

Vishay General Semiconductor - Diodes Division

4,470 -
GBU4ML-7001M3/51

数据表

- 4-SIP, GBU Tube Obsolete Single Phase Standard 3 A 1 V @ 4 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) - 1 kV - Through Hole GBU
GBU6DL-5300E3/51

GBU6DL-5300E3/51

BRIDGE RECT 1PHASE 200V 3.8A GBU

Vishay General Semiconductor - Diodes Division

5,265 -
GBU6DL-5300E3/51

数据表

- 4-SIP, GBU Tube Obsolete Single Phase Standard 3.8 A 1 V @ 6 A 5 µA @ 200 V -55°C ~ 150°C (TJ) - 200 V - Through Hole GBU
GBU6DL-5300M3/51

GBU6DL-5300M3/51

BRIDGE RECT 1PHASE 200V 3.8A GBU

Vishay General Semiconductor - Diodes Division

2,917 -
GBU6DL-5300M3/51

数据表

- 4-SIP, GBU Tube Obsolete Single Phase Standard 3.8 A 1 V @ 6 A 5 µA @ 200 V -55°C ~ 150°C (TJ) - 200 V - Through Hole GBU
GBU6DL-5302E3/45

GBU6DL-5302E3/45

BRIDGE RECT 1PHASE 200V 3.8A GBU

Vishay General Semiconductor - Diodes Division

4,790 -
GBU6DL-5302E3/45

数据表

- 4-SIP, GBU Tube Obsolete Single Phase Standard 3.8 A 1 V @ 6 A 5 µA @ 200 V -55°C ~ 150°C (TJ) - 200 V - Through Hole GBU
GBU6DL-5302E3/51

GBU6DL-5302E3/51

BRIDGE RECT 1PHASE 200V 3.8A GBU

Vishay General Semiconductor - Diodes Division

5,201 -
GBU6DL-5302E3/51

数据表

- 4-SIP, GBU Tube Obsolete Single Phase Standard 3.8 A 1 V @ 6 A 5 µA @ 200 V -55°C ~ 150°C (TJ) - 200 V - Through Hole GBU
GBU6DL-5302M3/45

GBU6DL-5302M3/45

BRIDGE RECT 1PHASE 200V 3.8A GBU

Vishay General Semiconductor - Diodes Division

9,634 -
GBU6DL-5302M3/45

数据表

- 4-SIP, GBU Tube Obsolete Single Phase Standard 3.8 A 1 V @ 6 A 5 µA @ 200 V -55°C ~ 150°C (TJ) - 200 V - Through Hole GBU
GBU6DL-5302M3/51

GBU6DL-5302M3/51

BRIDGE RECT 1PHASE 200V 3.8A GBU

Vishay General Semiconductor - Diodes Division

6,566 -
GBU6DL-5302M3/51

数据表

- 4-SIP, GBU Tube Obsolete Single Phase Standard 3.8 A 1 V @ 6 A 5 µA @ 200 V -55°C ~ 150°C (TJ) - 200 V - Through Hole GBU
GBU6DL-7005E3/45

GBU6DL-7005E3/45

BRIDGE RECT 1PHASE 200V 3.8A GBU

Vishay General Semiconductor - Diodes Division

9,930 -
GBU6DL-7005E3/45

数据表

- 4-SIP, GBU Tube Obsolete Single Phase Standard 3.8 A 1 V @ 6 A 5 µA @ 200 V -55°C ~ 150°C (TJ) - 200 V - Through Hole GBU
GBU6DL-7005M3/45

GBU6DL-7005M3/45

BRIDGE RECT 1PHASE 200V 3.8A GBU

Vishay General Semiconductor - Diodes Division

3,954 -
GBU6DL-7005M3/45

数据表

- 4-SIP, GBU Tube Obsolete Single Phase Standard 3.8 A 1 V @ 6 A 5 µA @ 200 V -55°C ~ 150°C (TJ) - 200 V - Through Hole GBU
GBU6GL-6130E3/51

GBU6GL-6130E3/51

BRIDGE RECT 1PHASE 400V 3.8A GBU

Vishay General Semiconductor - Diodes Division

3,978 -
GBU6GL-6130E3/51

数据表

- 4-SIP, GBU Tube Obsolete Single Phase Standard 3.8 A 1 V @ 6 A 5 µA @ 400 V -55°C ~ 150°C (TJ) - 400 V - Through Hole GBU
GBU6GL-6130M3/51

GBU6GL-6130M3/51

BRIDGE RECT 1PHASE 400V 3.8A GBU

Vishay General Semiconductor - Diodes Division

6,028 -
GBU6GL-6130M3/51

数据表

- 4-SIP, GBU Tube Obsolete Single Phase Standard 3.8 A 1 V @ 6 A 5 µA @ 400 V -55°C ~ 150°C (TJ) - 400 V - Through Hole GBU
GBU6J-1E3/51

GBU6J-1E3/51

BRIDGE RECT 1PHASE 600V 3.8A GBU

Vishay General Semiconductor - Diodes Division

8,207 -
GBU6J-1E3/51

数据表

- 4-SIP, GBU Tube Obsolete Single Phase Standard 3.8 A 1 V @ 6 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - 600 V - Through Hole GBU
GBU6J-1M3/51

GBU6J-1M3/51

BRIDGE RECT 1PHASE 600V 3.8A GBU

Vishay General Semiconductor - Diodes Division

4,950 -
GBU6J-1M3/51

数据表

- 4-SIP, GBU Tube Obsolete Single Phase Standard 3.8 A 1 V @ 6 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - 600 V - Through Hole GBU
GBU6J-5410M3/51

GBU6J-5410M3/51

BRIDGE RECT 1PHASE 600V 3.8A GBU

Vishay General Semiconductor - Diodes Division

6,130 -
GBU6J-5410M3/51

数据表

- 4-SIP, GBU Tube Obsolete Single Phase Standard 3.8 A 1 V @ 6 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - 600 V - Through Hole GBU
GBU6JL-5000E3/51

GBU6JL-5000E3/51

BRIDGE RECT 1PHASE 600V 3.8A GBU

Vishay General Semiconductor - Diodes Division

5,802 -
GBU6JL-5000E3/51

数据表

- 4-SIP, GBU Tube Obsolete Single Phase Standard 3.8 A 1 V @ 6 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - 600 V - Through Hole GBU
GBU6JL-5000M3/51

GBU6JL-5000M3/51

BRIDGE RECT 1PHASE 600V 3.8A GBU

Vishay General Semiconductor - Diodes Division

8,621 -
GBU6JL-5000M3/51

数据表

- 4-SIP, GBU Tube Obsolete Single Phase Standard 3.8 A 1 V @ 6 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - 600 V - Through Hole GBU
GBU6JL-5301E3/51

GBU6JL-5301E3/51

BRIDGE RECT 1PHASE 600V 3.8A GBU

Vishay General Semiconductor - Diodes Division

7,699 -
GBU6JL-5301E3/51

数据表

- 4-SIP, GBU Tube Obsolete Single Phase Standard 3.8 A 1 V @ 6 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - 600 V - Through Hole GBU
GBU6JL-5301M3/51

GBU6JL-5301M3/51

BRIDGE RECT 1PHASE 600V 3.8A GBU

Vishay General Semiconductor - Diodes Division

2,634 -
GBU6JL-5301M3/51

数据表

- 4-SIP, GBU Tube Obsolete Single Phase Standard 3.8 A 1 V @ 6 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - 600 V - Through Hole GBU
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