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桥式整流器

制造商 系列 封装/外壳 包装 产品状态 二极管类型 技术 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 电流 - 反向漏电 @ Vr 工作温度 等级 电压 - 反向峰值(最大值) 认证 安装类型 供应商设备封装

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 二极管类型 技术 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 电流 - 反向漏电 @ Vr 工作温度 等级 电压 - 反向峰值(最大值) 认证 安装类型 供应商设备封装
VS-36MT60

VS-36MT60

BRIDGE RECT 3PHASE 600V 35A D-63

Vishay General Semiconductor - Diodes Division

133 -
VS-36MT60

数据表

- 5-Square, D-63 Bulk Active Three Phase Standard 35 A - 10 µA @ 600 V -55°C ~ 150°C (TJ) - 600 V - QC Terminal D-63
MB6S-E3/45

MB6S-E3/45

BRIDGE RECT 1P 600V 0.5A TO269AA

Vishay General Semiconductor - Diodes Division

16,946 -
MB6S-E3/45

数据表

- TO-269AA, 4-BESOP Tube Active Single Phase Standard 500 mA 1 V @ 400 mA 5 µA @ 600 V -55°C ~ 150°C (TJ) - 600 V - Surface Mount TO-269AA (MBS)
MB2S-E3/45

MB2S-E3/45

BRIDGE RECT 1P 200V 0.5A TO269AA

Vishay General Semiconductor - Diodes Division

1,325 -
MB2S-E3/45

数据表

- TO-269AA, 4-BESOP Tube Active Single Phase Standard 500 mA 1 V @ 400 mA 5 µA @ 200 V -55°C ~ 150°C (TJ) - 200 V - Surface Mount TO-269AA (MBS)
B40C800DM-E3/45

B40C800DM-E3/45

BRIDGE RECT 1PHASE 65V 900MA DFM

Vishay General Semiconductor - Diodes Division

6,210 -
B40C800DM-E3/45

数据表

- 4-EDIP (0.300", 7.62mm) Tube Active Single Phase Standard 900 mA 1 V @ 900 mA 10 µA @ 65 V -40°C ~ 125°C (TJ) - 65 V - Through Hole DFM
B80C1000G-E4/51

B80C1000G-E4/51

BRIDGE RECT 1PHASE 125V 1A WOG

Vishay General Semiconductor - Diodes Division

3,544 -
B80C1000G-E4/51

数据表

- 4-Circular, WOG Bulk Active Single Phase Standard 1 A 1 V @ 1 A 10 µA @ 125 V -40°C ~ 125°C (TJ) - 125 V - Through Hole WOG
B250C1000G-E4/51

B250C1000G-E4/51

BRIDGE RECT 1PHASE 400V 1A WOG

Vishay General Semiconductor - Diodes Division

3,062 -
B250C1000G-E4/51

数据表

- 4-Circular, WOG Bulk Active Single Phase Standard 1 A 1 V @ 1 A 10 µA @ 400 V -40°C ~ 125°C (TJ) - 400 V - Through Hole WOG
B40C800G-E4/51

B40C800G-E4/51

BRIDGE RECT 1PHASE 65V 900MA WOG

Vishay General Semiconductor - Diodes Division

1,887 -
B40C800G-E4/51

数据表

- 4-Circular, WOG Bulk Active Single Phase Standard 900 mA 1 V @ 900 mA 10 µA @ 65 V -40°C ~ 125°C (TJ) - 65 V - Through Hole WOG
MB2S-E3/80

MB2S-E3/80

BRIDGE RECT 1P 200V 0.5A TO269AA

Vishay General Semiconductor - Diodes Division

84,419 -
MB2S-E3/80

数据表

- TO-269AA, 4-BESOP Tape & Reel (TR) Active Single Phase Standard 500 mA 1 V @ 400 mA 5 µA @ 200 V -55°C ~ 150°C (TJ) - 200 V - Surface Mount TO-269AA (MBS)
MB4S-E3/80

MB4S-E3/80

BRIDGE RECT 1P 400V 0.5A TO269AA

Vishay General Semiconductor - Diodes Division

63,815 -
MB4S-E3/80

数据表

- TO-269AA, 4-BESOP Tape & Reel (TR) Active Single Phase Standard 500 mA 1 V @ 400 mA 5 µA @ 400 V -55°C ~ 150°C (TJ) - 400 V - Surface Mount TO-269AA (MBS)
DF04M-E3/45

DF04M-E3/45

BRIDGE RECT 1PHASE 400V 1A DFM

Vishay General Semiconductor - Diodes Division

5,727 -
DF04M-E3/45

数据表

- 4-EDIP (0.300", 7.62mm) Tube Active Single Phase Standard 1 A 1.1 V @ 1 A 5 µA @ 400 V -55°C ~ 150°C (TJ) - 400 V - Through Hole DFM
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