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BSD223P

BSD223P

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制造商部分
BSD223P
制造商
IR (Infineon Technologies)
描述
MOSFET 2P-CH 20V 0.39A SOT363
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
7302
在线数据表
-
询问

Product Specifications

Type 描述
系列:OptiMOS™
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Obsolete
场效应管类型:2 P-Channel (Dual)
场效应管特征:Logic Level Gate
漏源电压 (vdss):20V
电流 - 连续漏极 (id) @ 25°c:390mA
rds on (max) @ id, vgs:1.2Ohm @ 390mA, 4.5V
vgs(th) (最大值) @ id:1.2V @ 1.5µA
栅极电荷 (qg) (max) @ vgs:0.62nC @ 4.5V
输入电容 (ciss) (max) @ vds:56pF @ 15V
功率 - 最大值:250mW
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
包/箱:6-VSSOP, SC-88, SOT-363
供应商设备包:PG-SOT363-6

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