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HAT1126RWS-E

HAT1126RWS-E

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制造商部分
HAT1126RWS-E
制造商
Renesas Electronics America
描述
MOSFET P-CH SOP8
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
7308
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Tape & Reel (TR)
零件状态:Obsolete
场效应管类型:2 P-Channel (Dual)
场效应管特征:Logic Level Gate, 4.5V Drive
漏源电压 (vdss):60V
电流 - 连续漏极 (id) @ 25°c:6A (Ta)
rds on (max) @ id, vgs:50mOhm @ 3A, 10V
vgs(th) (最大值) @ id:2.5V @ 1mA
栅极电荷 (qg) (max) @ vgs:37nC @ 10V
输入电容 (ciss) (max) @ vds:2300pF @ 10V
功率 - 最大值:3W (Ta)
工作温度:150°C
安装类型:Surface Mount
包/箱:8-SOIC (0.154", 3.90mm Width)
供应商设备包:8-SOP

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