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TPC8212-H(TE12LQ,M

TPC8212-H(TE12LQ,M

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制造商部分
TPC8212-H(TE12LQ,M
制造商
Toshiba Electronic Devices and Storage Corporation
描述
MOSFET 2N-CH 30V 6A SOP8
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
7297
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Tape & Reel (TR)
零件状态:Obsolete
场效应管类型:2 N-Channel (Dual)
场效应管特征:Logic Level Gate
漏源电压 (vdss):30V
电流 - 连续漏极 (id) @ 25°c:6A
rds on (max) @ id, vgs:21mOhm @ 3A, 10V
vgs(th) (最大值) @ id:2.3V @ 1mA
栅极电荷 (qg) (max) @ vgs:16nC @ 10V
输入电容 (ciss) (max) @ vds:840pF @ 10V
功率 - 最大值:450mW
工作温度:150°C (TJ)
安装类型:Surface Mount
包/箱:8-SOIC (0.173", 4.40mm Width)
供应商设备包:8-SOP (5.5x6.0)

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