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SSM6L61NU,LF

SSM6L61NU,LF

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制造商部分
SSM6L61NU,LF
制造商
Toshiba Electronic Devices and Storage Corporation
描述
MOSFET N/P-CH 20V 4A UDFN6
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
3336
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
场效应管类型:N and P-Channel
场效应管特征:Standard
漏源电压 (vdss):20V
电流 - 连续漏极 (id) @ 25°c:4A
rds on (max) @ id, vgs:-
vgs(th) (最大值) @ id:-
栅极电荷 (qg) (max) @ vgs:-
输入电容 (ciss) (max) @ vds:-
功率 - 最大值:-
工作温度:-
安装类型:Surface Mount
包/箱:6-WDFN Exposed Pad
供应商设备包:6-UDFN (2x2)

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