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ALD114913SAL

ALD114913SAL

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制造商部分
ALD114913SAL
制造商
Advanced Linear Devices, Inc.
描述
MOSFET 2N-CH 10.6V 8SOIC
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
50
在线数据表
-
询问

Product Specifications

Type 描述
系列:EPAD®
包裹:Tube
零件状态:Active
场效应管类型:2 N-Channel (Dual) Matched Pair
场效应管特征:Depletion Mode
漏源电压 (vdss):10.6V
电流 - 连续漏极 (id) @ 25°c:12mA, 3mA
rds on (max) @ id, vgs:500Ohm @ 2.7V
vgs(th) (最大值) @ id:1.26V @ 1µA
栅极电荷 (qg) (max) @ vgs:-
输入电容 (ciss) (max) @ vds:2.5pF @ 5V
功率 - 最大值:500mW
工作温度:0°C ~ 70°C (TJ)
安装类型:Surface Mount
包/箱:8-SOIC (0.154", 3.90mm Width)
供应商设备包:8-SOIC

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