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3N163 DIE

3N163 DIE

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制造商部分
3N163 DIE
制造商
Linear Integrated Systems, Inc.
描述
P-CHANNEL, SINGLE ENHANCEMENT MO
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
400
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Tray
零件状态:Active
场效应管类型:P-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):40 V
电流 - 连续漏极 (id) @ 25°c:50mA
驱动电压(最大 rds on,最小 rds on):20V
rds on (max) @ id, vgs:250Ohm @ 100µA, 20V
vgs(th) (最大值) @ id:5V @ 10µA
栅极电荷 (qg) (max) @ vgs:-
vgs (最大值):-6.5V
输入电容 (ciss) (max) @ vds:3.5 pF @ 15 V
场效应管特征:-
功耗(最大值):-
工作温度:-
安装类型:Surface Mount
供应商设备包:Die
包/箱:Die

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