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IRLI640GPBF

IRLI640GPBF

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制造商部分
IRLI640GPBF
制造商
Vishay / Siliconix
描述
MOSFET N-CH 200V 9.9A TO220-3
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
1219
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Tube
零件状态:Active
场效应管类型:N-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):200 V
电流 - 连续漏极 (id) @ 25°c:9.9A (Tc)
驱动电压(最大 rds on,最小 rds on):4V, 5V
rds on (max) @ id, vgs:180mOhm @ 5.9A, 5V
vgs(th) (最大值) @ id:2V @ 250µA
栅极电荷 (qg) (max) @ vgs:66 nC @ 10 V
vgs (最大值):±10V
输入电容 (ciss) (max) @ vds:1800 pF @ 25 V
场效应管特征:-
功耗(最大值):40W (Tc)
工作温度:-55°C ~ 150°C (TJ)
安装类型:Through Hole
供应商设备包:TO-220-3
包/箱:TO-220-3 Full Pack, Isolated Tab

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