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单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
EGP20K

EGP20K

DIODE GEN PURP 800V 2A DO15

Fairchild Semiconductor

4,996 -
EGP20K

数据表

- DO-204AC, DO-15, Axial Bulk Active Standard 800 V 1.7 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 5 µA @ 800 V 45pF @ 4V, 1MHz 2A - - Through Hole DO-15 -65°C ~ 150°C
SB380

SB380

RECTIFIER DIODE, SCHOTTKY, 3A, 8

Fairchild Semiconductor

3,440 -
SB380

数据表

- DO-201AD, Axial Bulk Active Schottky 80 V 850 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 80 V 180pF @ 4V, 1MHz 3A - - Through Hole DO-201AD -65°C ~ 125°C
EGF1B

EGF1B

RECTIFIER DIODE, 1A, 100V, DO-21

Fairchild Semiconductor

2,397 -
EGF1B

数据表

- DO-214AC, SMA Bulk Active Standard 100 V 1 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 100 V 15pF @ 4V, 1MHz 1A - - Surface Mount DO-214AC (SMA) -65°C ~ 175°C
SB3100

SB3100

DIODE SCHOTTKY 100V 3A DO201

Fairchild Semiconductor

26,553 -
SB3100

数据表

- DO-201AA, DO-27, Axial Bulk Active Schottky 100 V 780 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 600 µA @ 100 V - 3A - - Through Hole DO-201 -50°C ~ 150°C
EGP30C

EGP30C

DIODE GEN PURP 150V 3A DO201AD

Fairchild Semiconductor

5,000 -
EGP30C

数据表

- DO-201AD, Axial Bulk Active Standard 150 V 950 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 5 µA @ 150 V 95pF @ 4V, 1MHz 3A - - Through Hole DO-201AD -65°C ~ 150°C
ES1DAF

ES1DAF

DIODE GEN PURP 200V 1A DO214AD

Fairchild Semiconductor

30,000 -
ES1DAF

数据表

- DO-214AD, SMAF Bulk Active Standard 200 V 950 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 34 ns 1 µA @ 200 V 15pF @ 4V, 1MHz 1A Automotive AEC-Q101 Surface Mount DO-214AD (SMAF) -55°C ~ 150°C
EGP20G

EGP20G

DIODE GEN PURP 400V 2A DO15

Fairchild Semiconductor

3,070 -
EGP20G

数据表

- DO-204AC, DO-15, Axial Bulk Active Standard 400 V 1.25 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 5 µA @ 400 V 45pF @ 4V, 1MHz 2A - - Through Hole DO-15 -65°C ~ 150°C
EGP30F

EGP30F

DIODE GEN PURP 300V 3A DO201AD

Fairchild Semiconductor

2,500 -
EGP30F

数据表

- DO-201AD, Axial Bulk Active Standard 300 V 1.25 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 5 µA @ 300 V 75pF @ 4V, 1MHz 3A - - Through Hole DO-201AD -65°C ~ 150°C
EGP30A

EGP30A

DIODE GEN PURP 50V 3A DO201AD

Fairchild Semiconductor

2,500 -
EGP30A

数据表

- DO-201AD, Axial Bulk Active Standard 50 V 950 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 5 µA @ 50 V 95pF @ 4V, 1MHz 3A - - Through Hole DO-201AD -65°C ~ 150°C
S210

S210

RECTIFIER DIODE, SCHOTTKY, 2A, 1

Fairchild Semiconductor

549,367 -
S210

数据表

- DO-214AA, SMB Bulk Active Schottky 100 V 850 mV @ 2 A Fast Recovery =< 500ns, > 200mA (Io) - 400 µA @ 100 V - 2A - - Surface Mount DO-214AA (SMB) -65°C ~ 125°C
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