| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流(Io) | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
STPSC606DDIODE SIL CARB 600V 6A TO220AC STMicroelectronics |
17 | - |
|
数据表 |
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 600 V | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 75 µA @ 600 V | 375pF @ 0V, 1MHz | 6A | - | - | Through Hole | TO-220AC | -40°C ~ 175°C |
|
BYT30P-1000DIODE GEN PURP 1KV 30A SOD93-2 STMicroelectronics |
3,725 | - |
|
数据表 |
- | SOD-93-2 | Tube | Obsolete | Standard | 1000 V | 1.9 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 165 ns | 100 µA @ 1000 V | - | 30A | - | - | Through Hole | SOD-93-2 | -40°C ~ 150°C |
|
BYT30PI-1000RGDIODE GEN PURP 1KV 30A DOP3I STMicroelectronics |
4,625 | - |
|
数据表 |
- | DOP3I-2 Insulated (Straight Leads) | Tube | Obsolete | Standard | 1000 V | 1.9 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 165 ns | 100 µA @ 1000 V | - | 30A | - | - | Through Hole | DOP3I | -40°C ~ 150°C |
|
STPSC10H065DLFDIODE SIL CARB 650V 10A PWRFLAT STMicroelectronics |
6,027 | - |
|
数据表 |
- | 8-PowerVDFN | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.55 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 595pF @ 0V, 1MHz | 10A | - | - | Surface Mount | PowerFlat™ (8x8) HV | -40°C ~ 175°C |
|
STPSC806G-TRDIODE SIL CARBIDE 600V 8A D2PAK STMicroelectronics |
5,255 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 600 V | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 600 V | 450pF @ 0V, 1MHz | 8A | - | - | Surface Mount | D2PAK | -40°C ~ 175°C |
|
STPSC10H12B-TR1DIODE SIL CARBIDE 1.2KV 10A DPAK STMicroelectronics |
8,727 | - |
|
数据表 |
ECOPACK® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 1.5 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 1200 V | 725pF @ 0V, 1MHz | 10A | - | - | Surface Mount | DPAK | -40°C ~ 175°C |
|
STPS0540ZYDIODE SCHOTTKY 40V 500MA SOD123 STMicroelectronics |
115 | - |
|
数据表 |
Q | SOD-123 | Tape & Reel (TR) | Active | Schottky | 40 V | 500 mV @ 500 mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 40 µA @ 40 V | - | 500mA | Automotive | - | Surface Mount | SOD-123 | -40°C ~ 150°C |
|
STTH3R02DIODE GEN PURP 200V 3A DO201AD STMicroelectronics |
468 | - |
|
数据表 |
- | DO-201AD, Axial | Cut Tape (CT) | Active | Standard | 200 V | 1 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 3 µA @ 200 V | - | 3A | - | - | Through Hole | DO-201AD | 175°C (Max) |
|
STPS1045BDIODE SCHOTTKY 45V 10A DPAK STMicroelectronics |
936 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Active | Schottky | 45 V | 630 mV @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 45 V | - | 10A | - | - | Surface Mount | DPAK | 175°C (Max) |
|
STTH5L06FPDIODE GEN PURP 600V 5A TO220FPAC STMicroelectronics |
986 | - |
|
数据表 |
- | TO-220-2 Full Pack, Isolated Tab | Tube | Active | Standard | 600 V | 1.3 V @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 95 ns | 5 µA @ 600 V | - | 5A | - | - | Through Hole | TO-220FPAC | 175°C (Max) |