ROHM Semiconductor|单个二极管 - 页 34

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	技术	电压 - 直流反向 (Vr)（最大值）	电压 - 正向 (Vf)（最大值）@ If	速度	反向恢复时间 (trr)	电流 - 反向漏电 @ Vr	电容 @ Vr, F	电流 - 平均整流（Io）	等级	认证	安装类型	供应商设备封装	工作温度 - 结点
RBLQ20BM10FHTL TRENCH MOS STRUCTURE, 100V, 20A, Rohm Semiconductor	2,021	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	Schottky	100 V	860 mV @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	-	80 µA @ 100 V	-	20A	Automotive	AEC-Q101	Surface Mount	TO-252	150°C
SCS310AHGC9 DIODE SIL CARB 650V 10A TO220ACP Rohm Semiconductor	361	-	询价单	数据表	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	1.5 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	500pF @ 1V, 1MHz	10A	-	-	Through Hole	TO-220ACP	175°C (Max)
SCS212AGC DIODE SIL CARB 650V 12A TO220AC Rohm Semiconductor	8,837	-	询价单	数据表	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	1.55 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	240 µA @ 600 V	438pF @ 1V, 1MHz	12A	-	-	Through Hole	TO-220AC	175°C (Max)
SCS208AGHRC DIODE SIL CARB 650V 8A TO220AC Rohm Semiconductor	5,407	-	询价单	数据表	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	1.55 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	160 µA @ 600 V	291pF @ 1V, 1MHz	8A	Automotive	AEC-Q101	Through Hole	TO-220AC	175°C (Max)
SCS108AGC DIODE SIL CARB 600V 8A TO220AC Rohm Semiconductor	4,685	-	询价单	数据表	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	600 V	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	160 µA @ 600 V	345pF @ 1V, 1MHz	8A	-	-	Through Hole	TO-220AC	175°C (Max)
SCS308APC9 DIODE SILICON CARBIDE 650V 8A Rohm Semiconductor	125	-	询价单	数据表	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	1.5 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	400pF @ 1V, 1MHz	8A	-	-	Through Hole	-	175°C (Max)
RBLQ20NL10STL TRENCH MOS STRUCTURE, 100V, 20A, Rohm Semiconductor	3,608	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	Schottky	100 V	860 mV @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	-	80 µA @ 100 V	-	20A	-	-	Surface Mount	TO-263L	150°C
SCS215AGC DIODE SIC 650V 15A TO220ACFP Rohm Semiconductor	7,361	-	询价单	数据表	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	1.55 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	300 µA @ 600 V	550pF @ 1V, 1MHz	15A	-	-	Through Hole	TO-220ACFP	175°C (Max)
SCS210AGHRC DIODE SIL CARB 650V 10A TO220AC Rohm Semiconductor	792	-	询价单	数据表	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	1.55 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 600 V	365pF @ 1V, 1MHz	10A	Automotive	AEC-Q101	Through Hole	TO-220AC	175°C (Max)
SCS310AMC DIODE SIL CARB 650V 10A TO220FM Rohm Semiconductor	215	-	询价单	数据表	-	TO-220-2 Full Pack	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	1.5 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	500pF @ 1V, 1MHz	10A	-	-	Through Hole	TO-220FM	175°C (Max)

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