ROHM Semiconductor|单个二极管 - 页 33

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	技术	电压 - 直流反向 (Vr)（最大值）	电压 - 正向 (Vf)（最大值）@ If	速度	反向恢复时间 (trr)	电流 - 反向漏电 @ Vr	电容 @ Vr, F	电流 - 平均整流（Io）	等级	认证	安装类型	供应商设备封装	工作温度 - 结点
RF505TF6S DIODE GEN PURP 600V 5A TO220NFM Rohm Semiconductor	922	-	询价单	数据表	-	TO-220-2 Full Pack, Isolated Tab	Bulk	Not For New Designs	Standard	600 V	-	Fast Recovery =< 500ns, > 200mA (Io)	-	-	-	5A	-	-	Through Hole	TO-220NFM	150°C (Max)
RFN10BM6STL DIODE GEN PURP 600V 10A TO252 Rohm Semiconductor	1,299	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	Standard	600 V	1.55 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 600 V	-	10A	-	-	Surface Mount	TO-252	150°C
RB085BM-40TL DIODE SCHOTTKY 45V 10A TO252 Rohm Semiconductor	2,715	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	Schottky	45 V	550 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 40 V	-	10A	-	-	Surface Mount	TO-252	150°C (Max)
RF1501NS3STL DIODE GEN PURP 300V 20A LPDS Rohm Semiconductor	1,023	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	300 V	1.5 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	10 µA @ 300 V	-	20A	-	-	Surface Mount	LPDS	150°C (Max)
SCS304AHGC9 DIODE SIL CARB 650V 4A TO220ACP Rohm Semiconductor	681	-	询价单	数据表	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	1.5 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 650 V	200pF @ 1V, 1MHz	4A	-	-	Through Hole	TO-220ACP	175°C (Max)
RFX10TF6S DIODE GEN PURP 600V 10A TO220NFM Rohm Semiconductor	936	-	询价单	数据表	-	TO-220-2 Full Pack	Tube	Not For New Designs	Standard	600 V	2.5 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	10 µA @ 600 V	-	10A	-	-	Through Hole	TO-220NFM	150°C (Max)
SCS205KGC DIODE SIL CARB 1.2KV 5A TO220AC Rohm Semiconductor	7,558	-	询价单	数据表	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	1200 V	1.6 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 1200 V	270pF @ 1V, 1MHz	5A	-	-	Through Hole	TO-220AC	175°C (Max)
SCS304APC9 DIODE SILICON CARBIDE 650V 4A Rohm Semiconductor	862	-	询价单	数据表	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	1.5 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 650 V	200pF @ 1V, 1MHz	4A	-	-	Through Hole	-	175°C (Max)
RFUS20NS4STL DIODE GEN PURP 430V 20A LPDS Rohm Semiconductor	259	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	430 V	-	Fast Recovery =< 500ns, > 200mA (Io)	-	-	-	20A	-	-	Surface Mount	LPDS	150°C (Max)
RBQ30NS45BTL DIODE SCHOTTKY 45V 30A LPDS Rohm Semiconductor	706	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Schottky	45 V	590 mV @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	-	350 µA @ 45 V	-	30A	-	-	Surface Mount	LPDS	150°C

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