| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流(Io) | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SCS106AGCDIODE SIL CARB 600V 6A TO220AC Rohm Semiconductor |
3,136 | - |
|
数据表 |
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 600 V | 1.5 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 120 µA @ 600 V | 260pF @ 1V, 1MHz | 6A | - | - | Through Hole | TO-220AC | 175°C (Max) |
|
RF501BM2STLDIODE GEN PURP 200V 5A TO252 Rohm Semiconductor |
981 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | Standard | 200 V | 920 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 200 V | - | 5A | - | - | Surface Mount | TO-252 | 150°C (Max) |
|
RF505BM6STLDIODE GEN PURP 600V 5A TO252 Rohm Semiconductor |
2,468 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | Standard | 600 V | 1.7 V @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 10 µA @ 600 V | - | 5A | - | - | Surface Mount | TO-252 | 150°C (Max) |
|
RF1005TF6SDIODE GEN PURP 600V 10A TO220NFM Rohm Semiconductor |
606 | - |
|
数据表 |
- | TO-220-2 Full Pack | Bulk | Not For New Designs | Standard | 600 V | 1.7 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 40 ns | 10 µA @ 600 V | - | 10A | - | - | Through Hole | TO-220NFM | 150°C (Max) |
|
RBLQ20BGE10TLTRENCH MOS STRUCTURE, 100V, 20A, Rohm Semiconductor |
4,548 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | Schottky | 100 V | 860 mV @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 80 µA @ 100 V | - | 20A | - | - | Surface Mount | TO-252GE | 150°C |
|
SCS308AHGC9DIODE SIL CARB 650V 8A TO220ACP Rohm Semiconductor |
4,892 | - |
|
数据表 |
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 1.5 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 400pF @ 1V, 1MHz | 8A | - | - | Through Hole | TO-220ACP | 175°C (Max) |
|
RSX058BM2STL200V 3A, TO-252, ULTRA LOW IRSBD Rohm Semiconductor |
2,442 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | Schottky | 200 V | 870 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 nA @ 200 V | - | 3A | - | - | Surface Mount | TO-252 | 175°C |
|
RSX078BM2STL200V 5A, TO-252, ULTRA LOW IR SB Rohm Semiconductor |
2,468 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | Schottky | 200 V | 920 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 nA @ 200 V | - | 5A | - | - | Surface Mount | TO-252 | 175°C |
|
SCS206AGHRCDIODE SIL CARB 650V 6A TO220AC Rohm Semiconductor |
5,670 | - |
|
数据表 |
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 1.55 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 120 µA @ 600 V | 219pF @ 1V, 1MHz | 6A | Automotive | AEC-Q101 | Through Hole | TO-220AC | 175°C (Max) |
|
SCS210AGCDIODE SIL CARB 650V 10A TO220AC Rohm Semiconductor |
3,248 | - |
|
数据表 |
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 1.55 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 600 V | 365pF @ 1V, 1MHz | 10A | - | - | Through Hole | TO-220AC | 175°C (Max) |