ROHM Semiconductor|单个二极管 - 页 31

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	技术	电压 - 直流反向 (Vr)（最大值）	电压 - 正向 (Vf)（最大值）@ If	速度	反向恢复时间 (trr)	电流 - 反向漏电 @ Vr	电容 @ Vr, F	电流 - 平均整流（Io）	等级	认证	安装类型	供应商设备封装	工作温度 - 结点
RFVS8TG6SGC9 DIODE GEN PURP 600V 8A TO220ACFP Rohm Semiconductor	929	-	询价单	数据表	-	TO-220-2	Tube	Active	Standard	600 V	3 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	40 ns	10 µA @ 600 V	-	8A	-	-	Through Hole	TO-220ACFP	150°C (Max)
SCS306AHGC9 DIODE SIL CARB 650V 6A TO220ACP Rohm Semiconductor	6,211	-	询价单	数据表	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	1.5 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	30 µA @ 650 V	300pF @ 1V, 1MHz	6A	-	-	Through Hole	TO-220ACP	175°C (Max)
RB075BM40STL DIODE SCHOTTKY 40V 5A TO252 Rohm Semiconductor	4,993	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	Schottky	40 V	750 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	5 µA @ 40 V	-	5A	-	-	Surface Mount	TO-252	150°C (Max)
SCS208AGC DIODE SIL CARB 650V 8A TO220AC Rohm Semiconductor	2,614	-	询价单	数据表	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	1.55 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	160 µA @ 600 V	291pF @ 1V, 1MHz	8A	-	-	Through Hole	TO-220AC	175°C (Max)
RB078BM30STL DIODE SCHOTTKY 30V 5A TO252 Rohm Semiconductor	9,438	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	Schottky	30 V	720 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	5 µA @ 30 V	-	5A	-	-	Surface Mount	TO-252	150°C (Max)
RFV8TG6SGC9 DIODE GEN PURP 600V 8A TO220ACFP Rohm Semiconductor	887	-	询价单	数据表	-	TO-220-2	Tube	Active	Standard	600 V	2.8 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	45 ns	10 µA @ 600 V	-	8A	-	-	Through Hole	TO-220ACFP	150°C (Max)
RF305BM6STL DIODE GEN PURP 600V 3A TO252 Rohm Semiconductor	198	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	Standard	600 V	1.7 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	10 µA @ 600 V	-	3A	-	-	Surface Mount	TO-252	150°C (Max)
RFV8TJ6SGC9 DIODE GEN PURP 600V 8A TO220ACFP Rohm Semiconductor	976	-	询价单	数据表	-	TO-220-2 Full Pack	Tube	Active	Standard	600 V	2.8 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	45 ns	10 µA @ 600 V	-	8A	-	-	Through Hole	TO-220ACFP	150°C (Max)
RFN30TS6SGC11 DIODE GEN PURP 600V 30A TO247 Rohm Semiconductor	9,876	-	询价单	数据表	-	TO-247-3	Bulk	Not For New Designs	Standard	600 V	1.55 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	60 ns	10 µA @ 600 V	-	30A	-	-	Through Hole	TO-247	150°C (Max)
RFUH30TS6SGC11 DIODE GEN PURP 600V 15A TO247 Rohm Semiconductor	2,384	-	询价单	数据表	-	TO-247-3	Tube	Not For New Designs	Standard	600 V	2.8 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 600 V	-	15A	-	-	Through Hole	TO-247	150°C (Max)

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