ROHM Semiconductor|单个二极管 - 页 111

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	技术	电压 - 直流反向 (Vr)（最大值）	电压 - 正向 (Vf)（最大值）@ If	速度	反向恢复时间 (trr)	电流 - 反向漏电 @ Vr	电容 @ Vr, F	电流 - 平均整流（Io）	等级	认证	安装类型	供应商设备封装	工作温度 - 结点
RF1501TF3SFHC9 DIODE GEN PURP 300V 20A TO220NFM Rohm Semiconductor	1,336	-	询价单	数据表	-	TO-220-2 Full Pack	Tube	Active	Standard	300 V	1.5 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	10 µA @ 300 V	-	20A	Automotive	AEC-Q101	Through Hole	TO-220NFM	150°C (Max)
1SR159-200TE25 DIODE GEN PURP 200V 1A PMDS Rohm Semiconductor	5,804	-	询价单	数据表	-	DO-214AC, SMA	Tape & Reel (TR)	Not For New Designs	Standard	200 V	980 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 200 V	-	1A	-	-	Surface Mount	PMDS	150°C (Max)
RFUH20TB3SNZC9 DIODE GEN PURP 350V 20A TO220NFM Rohm Semiconductor	913	-	询价单	数据表	-	TO-220-2 Full Pack	Tube	Active	Standard	350 V	1.5 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	10 nA @ 350 V	-	20A	-	-	Through Hole	TO-220NFM	150°C
RBQ30NS45BFHTL DIODE SCHOTTKY 45V 30A LPDS Rohm Semiconductor	995	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Schottky	45 V	590 mV @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	-	350 µA @ 45 V	-	30A	Automotive	AEC-Q101	Surface Mount	LPDS	150°C (Max)
SCS208AGC17 DIODE SIL CARB 650V 8A TO220ACFP Rohm Semiconductor	901	-	询价单	数据表	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.55 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	160 µA @ 600 V	291pF @ 1V, 1MHz	8A	-	-	Through Hole	TO-220ACFP	175°C
SCS206AJTLL DIODE SIL CARB 650V 6A TO263AB Rohm Semiconductor	2,842	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	1.55 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	120 µA @ 600 V	219pF @ 1V, 1MHz	6A	-	-	Surface Mount	TO-263AB	175°C (Max)
SCS306AJTLL DIODE SIL CARBIDE 650V 6A LPTL Rohm Semiconductor	2,023	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	1.5 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	30 µA @ 650 V	300pF @ 1V, 1MHz	6A	-	-	Surface Mount	LPTL	175°C (Max)
SCS210AGC17 DIODE SIC 650V 10A TO220ACFP Rohm Semiconductor	1,918	-	询价单	数据表	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.55 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 600 V	365pF @ 1V, 1MHz	10A	-	-	Through Hole	TO-220ACFP	175°C
SCS206AGC17 DIODE SIL CARB 650V 6A TO220ACFP Rohm Semiconductor	638	-	询价单	数据表	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.55 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	120 µA @ 600 V	219pF @ 1V, 1MHz	6A	-	-	Through Hole	TO-220ACFP	175°C
RRD20TJ10SGC9 DIODE GEN PURP 1KV 20A TO220ACFP Rohm Semiconductor	219	-	询价单	数据表	-	TO-220-2 Full Pack	Tube	Active	Standard	1000 V	1.05 V @ 20 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 1000 V	-	20A	-	-	Through Hole	TO-220ACFP	150°C

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