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单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
NRVBM2H100T3G

NRVBM2H100T3G

DIODE SCHOTTKY 100V 2A POWERMITE

onsemi

11,680 -
NRVBM2H100T3G

数据表

POWERMITE® DO-216AA Tape & Reel (TR) Active Schottky 100 V 680 mV @ 2 A Fast Recovery =< 500ns, > 200mA (Io) - 20 µA @ 100 V - 2A - - Surface Mount Powermite -65°C ~ 175°C
DLM10C-AT1

DLM10C-AT1

DIODE GEN PURP 200V 1A DO204AL

onsemi

4,905 -
DLM10C-AT1

数据表

- DO-204AL, DO-41, Axial Bulk Obsolete Standard 200 V 980 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 200 V - 1A - - Through Hole - 150°C (Max)
DSA26G

DSA26G

DIODE GEN PURP 600V 2.6A AXIAL

onsemi

9,571 -
DSA26G

数据表

- Axial Bulk Obsolete Standard 600 V 1.05 V @ 2.6 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 600 V - 2.6A - - Through Hole - 150°C (Max)
DSK10C

DSK10C

DIODE GEN PURP 200V 1A AXIAL

onsemi

7,139 -
DSK10C

数据表

- R-1, Axial Bulk Obsolete Standard 200 V 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 200 V - 1A - - Through Hole - 150°C (Max)
RD0506T-H

RD0506T-H

DIODE GEN PURP 600V 5A TP

onsemi

4,982 -
RD0506T-H

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Bulk Obsolete Standard 600 V 1.6 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 50 µA @ 600 V - 5A - - Through Hole TP 150°C (Max)
SSURHD8560W1T4G

SSURHD8560W1T4G

DIODE GEN PURP 600V 5A DPAK

onsemi

1,574 -
SSURHD8560W1T4G

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active Standard 600 V 2.7 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 10 µA @ 600 V - 5A - - Surface Mount DPAK -65°C ~ 175°C
RD2006FR-H

RD2006FR-H

DIODE GEN PURP 600V 20A TO220F

onsemi

9,496 -
RD2006FR-H

数据表

- TO-220-2 Tube Obsolete Standard 600 V 1.75 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 100 µA @ 600 V - 20A - - Through Hole TO-220F 150°C (Max)
DLN10C-AT1

DLN10C-AT1

DIODE GEN PURP 200V 1A AXIAL

onsemi

6,533 -
DLN10C-AT1

数据表

- R-1, Axial Tape & Reel (TR) Obsolete Standard 200 V 980 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 200 V - 1A - - Through Hole - 150°C (Max)
DLN10C-BT

DLN10C-BT

DIODE GEN PURP 200V 1A AXIAL

onsemi

2,177 -
DLN10C-BT

数据表

- R-1, Axial Tape & Reel (TR) Obsolete Standard 200 V 980 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 200 V - 1A - - Through Hole - 150°C (Max)
DSK10C-BT

DSK10C-BT

DIODE GEN PURP 200V 1A AXIAL

onsemi

5,287 -
DSK10C-BT

数据表

- R-1, Axial Tape & Reel (TR) Obsolete Standard 200 V 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 200 V - 1A - - Through Hole - 150°C (Max)
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