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单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
JANS1N5711UB

JANS1N5711UB

DIODE SCHOTTKY 50V UB

Microchip Technology

4,050 -
JANS1N5711UB

数据表

- 4-SMD, No Lead Bulk Active Schottky 50 V 1 V @ 15 mA Small Signal =< 200mA (Io), Any Speed - 200 nA @ 50 V 2pF @ 0V, 1MHz - Military MIL-PRF-19500/444 Surface Mount UB -65°C ~ 150°C
JANS1N5711UB/TR

JANS1N5711UB/TR

DIODE SCHOTTKY 50V UB

Microchip Technology

8,317 -
JANS1N5711UB/TR

数据表

- 4-SMD, No Lead Tape & Reel (TR) Active Schottky 50 V 1 V @ 15 mA Small Signal =< 200mA (Io), Any Speed - 200 nA @ 50 V 2pF @ 0V, 1MHz - Military MIL-PRF-19500/444 Surface Mount UB -65°C ~ 150°C
1N6656

1N6656

DIODE GEN PURP 200V 20A TO254

Microchip Technology

3,438 -
1N6656

数据表

- TO-254-3, TO-254AA Bulk Active Standard 200 V 1 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns - - 20A - - Through Hole TO-254AA -
1N6655

1N6655

DIODE GEN PURP 150V 20A TO254

Microchip Technology

6,237 -
1N6655

数据表

- TO-254-3, TO-254AA Bulk Active Standard 150 V 1 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 150 V 150pF @ 10V, 1MHz 20A - - Through Hole TO-254AA -65°C ~ 175°C
1N6654

1N6654

DIODE GEN PURP 100V 20A TO254

Microchip Technology

2,873 -
1N6654

数据表

- TO-254-3, TO-254AA Bulk Active Standard 100 V 1 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns - - 20A - - Through Hole TO-254AA -
JANTX1N6658

JANTX1N6658

DIODE GEN PURP 150V 15A TO254

Microchip Technology

9,656 -
JANTX1N6658

数据表

- TO-254-3, TO-254AA Bulk Active Standard 150 V 1.2 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 150 V 150pF @ 10V, 1MHz 15A Military MIL-PRF-19500/616 Through Hole TO-254 -
JANTX1N6658R

JANTX1N6658R

DIODE GEN PURP 150V 15A TO254

Microchip Technology

5,658 -
JANTX1N6658R

数据表

- TO-254-3, TO-254AA Bulk Active Standard, Reverse Polarity 150 V 1.2 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 150 V 150pF @ 10V, 1MHz 15A Military MIL-PRF-19500/616 Through Hole TO-254 -
JANTX1N6659

JANTX1N6659

DIODE GEN PURP 200V 15A TO254

Microchip Technology

5,326 -
JANTX1N6659

数据表

- TO-254-3, TO-254AA Bulk Active Standard 200 V 1.2 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 200 V 150pF @ 10V, 1MHz 15A Military MIL-PRF-19500/616 Through Hole TO-254 -
JANTX1N6659R

JANTX1N6659R

DIODE GEN PURP 200V 15A TO254

Microchip Technology

7,653 -
JANTX1N6659R

数据表

- TO-254-3, TO-254AA Bulk Active Standard, Reverse Polarity 200 V 1.2 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 200 V 150pF @ 10V, 1MHz 15A Military MIL-PRF-19500/616 Through Hole TO-254 -
JAN1N3890R

JAN1N3890R

DIODE GEN PURP 100V 12A DO203AA

Microchip Technology

7,583 -
JAN1N3890R

数据表

- DO-203AA, DO-4, Stud Bulk Active Standard, Reverse Polarity 100 V 1.5 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 10 µA @ 100 V 115pF @ 10V, 1MHz 12A Military MIL-PRF-19500/304 Stud Mount DO-203AA (DO-4) -65°C ~ 175°C
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