| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流(Io) | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GAP3SLT33-214DIODE SIC 3.3KV 300MA DO214AA GeneSiC Semiconductor |
6,598 | - |
|
数据表 |
SiC Schottky MPS™ | DO-214AA, SMB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 3300 V | 2.2 V @ 300 mA | - | 0 ns | 10 µA @ 3300 V | 42pF @ 1V, 1MHz | 300mA | - | - | Surface Mount | DO-214AA | -55°C ~ 175°C |
|
GD25MPS17HDIODE SIL CARB 1.7KV 56A TO247-2 GeneSiC Semiconductor |
1,285 | - |
|
数据表 |
SiC Schottky MPS™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1700 V | 1.8 V @ 25 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 1700 V | 1083pF @ 1V, 1MHz | 56A | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
GC05MPS33JDIODE SIL CARB 3.3KV 5A TO263-7 GeneSiC Semiconductor |
1,114 | - |
|
数据表 |
SiC Schottky MPS™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tube | Active | SiC (Silicon Carbide) Schottky | 3300 V | - | No Recovery Time > 500mA (Io) | 0 ns | - | - | 5A | - | - | Surface Mount | TO-263-7 | 175°C |
|
S300YDIODE GEN PURP 1.6KV 300A DO9 GeneSiC Semiconductor |
54 | - |
|
数据表 |
- | DO-205AB, DO-9, Stud | Bulk | Active | Standard | 1600 V | 1.2 V @ 300 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 1600 V | - | 300A | - | - | Chassis, Stud Mount | DO-9 | -60°C ~ 180°C |
|
GC50MPS33HDIODE SIL CARB 3.3KV 50A TO247-2 GeneSiC Semiconductor |
78 | - |
|
数据表 |
SiC Schottky MPS™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 3300 V | - | No Recovery Time > 500mA (Io) | 0 ns | - | - | 50A | - | - | Through Hole | TO-247-2 | 175°C |
|
MURH10010DIODE GEN PURP 100V 100A D-67 GeneSiC Semiconductor |
3,420 | - |
|
数据表 |
- | D-67 | Bulk | Active | Standard | 100 V | 1.3 V @ 100 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 25 µA @ 50 V | - | 100A | - | - | Chassis Mount | D-67 | - |
|
MURH10010RDIODE GP REV 100V 100A D-67 GeneSiC Semiconductor |
3,378 | - |
|
数据表 |
- | D-67 | Bulk | Active | Standard, Reverse Polarity | 100 V | 1.3 V @ 100 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 25 µA @ 50 V | - | 100A | - | - | Chassis Mount | D-67 | - |
|
MURH10020DIODE GEN PURP 200V 100A D-67 GeneSiC Semiconductor |
4,632 | - |
|
数据表 |
- | D-67 | Bulk | Active | Standard | 200 V | 1.3 V @ 100 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 25 µA @ 50 V | - | 100A | - | - | Chassis Mount | D-67 | - |
|
MURH10020RDIODE GP REV 200V 100A D-67 GeneSiC Semiconductor |
3,026 | - |
|
数据表 |
- | D-67 | Bulk | Active | Standard, Reverse Polarity | 200 V | 1.3 V @ 100 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 25 µA @ 50 V | - | 100A | - | - | Chassis Mount | D-67 | - |
|
MURH10040DIODE GEN PURP 400V 100A D-67 GeneSiC Semiconductor |
7,235 | - |
|
数据表 |
- | D-67 | Bulk | Active | Standard | 400 V | 1.3 V @ 100 A | Fast Recovery =< 500ns, > 200mA (Io) | 90 ns | 25 µA @ 50 V | - | 100A | - | - | Chassis Mount | D-67 | - |