订单满￥1000免运费
24小时咨询热线
0755 83957878
单个二极管
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GB50MPS17-247DIODE SIL CARB 1.7KV 216A TO247 GeneSiC Semiconductor |
8,188 | - |
|
数据表 |
SiC Schottky MPS™ | TO-247-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1700 V | 1.8 V @ 50 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 1700 V | 3193pF @ 1V, 1MHz | 216A | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
GB02SHT03-46DIODE SIL CARBIDE 300V 4A TO46 GeneSiC Semiconductor |
4,712 | - |
|
数据表 |
- | TO-206AB, TO-46-3 Metal Can | Bulk | Obsolete | SiC (Silicon Carbide) Schottky | 300 V | 1.6 V @ 1 A | No Recovery Time > 500mA (Io) | 0 ns | 5 µA @ 300 V | 76pF @ 1V, 1MHz | 4A | - | - | Through Hole | TO-46 | -55°C ~ 225°C |
|
GB01SLT12-214DIODE SIL CARBIDE 1.2KV 2.5A SMB GeneSiC Semiconductor |
575 | - |
|
数据表 |
SiC Schottky MPS™ | DO-214AA, SMB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 1.8 V @ 1 A | No Recovery Time > 500mA (Io) | 0 ns | 10 µA @ 1200 V | 69pF @ 1V, 1MHz | 2.5A | - | - | Surface Mount | DO-214AA (SMB) | -55°C ~ 175°C |
|
|
GB02SLT12-214DIODE SIL CARB 1.2KV 2A DO214AA GeneSiC Semiconductor |
12,092 | - |
|
数据表 |
SiC Schottky MPS™ | DO-214AA, SMB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 1.8 V @ 1 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | 131pF @ 1V, 1MHz | 2A | - | - | Surface Mount | DO-214AA | -55°C ~ 175°C |
|
GD10MPS12EDIODE SIL CARB 1.2KV 29A TO252-2 GeneSiC Semiconductor |
9,841 | - |
|
数据表 |
SiC Schottky MPS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 5 µA @ 1200 V | 367pF @ 1V, 1MHz | 29A | - | - | Surface Mount | TO-252-2 | -55°C ~ 175°C |
|
GD10MPS12ADIODE SIL CARB 1.2KV 25A TO220-2 GeneSiC Semiconductor |
3,529 | - |
|
数据表 |
SiC Schottky MPS™ | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 5 µA @ 1200 V | 367pF @ 1V, 1MHz | 25A | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
GD05MPS17J-TR1700V 5A TO-247-2 SIC SCHOTTKY M GeneSiC Semiconductor |
1,286 | - |
|
数据表 |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1700 V | 1.8 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 1700 V | 361pF @ 1V, 1MHz | 15A | - | - | Surface Mount | TO-263-7 | -55°C ~ 175°C |
|
GD05MPS17HDIODE SIL CARB 1.7KV 15A TO247-2 GeneSiC Semiconductor |
993 | - |
|
数据表 |
SiC Schottky MPS™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1700 V | 1.8 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 1700 V | 361pF @ 1V, 1MHz | 15A | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
GD10MPS17HDIODE SIL CARB 1.7KV 26A TO247-2 GeneSiC Semiconductor |
780 | - |
|
数据表 |
SiC Schottky MPS™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1700 V | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 1700 V | 721pF @ 1V, 1MHz | 26A | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
|
GD60MPS06HDIODE SIL CARB 650V 82A TO247-2 GeneSiC Semiconductor |
849 | - |
|
数据表 |
SiC Schottky MPS™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.8 V @ 60 A | No Recovery Time > 500mA (Io) | 0 ns | 10 µA @ 650 V | 1463pF @ 1V, 1MHz | 82A | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
