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二极管阵列

制造商 系列 封装/外壳 包装 产品状态 二极管配置 技术 电流 - 平均整流 (Io)(每个二极管) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电压 - 直流反向 (Vr)(最大值) 工作温度 - 结点 等级 认证 安装类型 供应商设备封装

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 二极管配置 技术 电流 - 平均整流 (Io)(每个二极管) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电压 - 直流反向 (Vr)(最大值) 工作温度 - 结点 等级 认证 安装类型 供应商设备封装
HN1D02FU,LF

HN1D02FU,LF

DIODE ARRAY GP 80V 100MA US6

Toshiba Semiconductor and Storage

8,670 -
HN1D02FU,LF

数据表

- 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active 2 Pair Common Cathode Standard 100mA 1.2 V @ 100 mA Small Signal =< 200mA (Io), Any Speed 4 ns 500 nA @ 80 V 80 V 125°C (Max) - - Surface Mount US6
HN1D01FU,LF(T

HN1D01FU,LF(T

DIODE ARRAY GP 80V 100MA US6

Toshiba Semiconductor and Storage

3,107 -
HN1D01FU,LF(T

数据表

- 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active 2 Pair Common Anode Standard 100mA 1.2 V @ 100 mA Small Signal =< 200mA (Io), Any Speed 4 ns 500 nA @ 80 V 80 V 125°C (Max) - - Surface Mount US6
HN2D02FU,LF

HN2D02FU,LF

DIODE ARRAY GP 80V 80MA US6

Toshiba Semiconductor and Storage

3,045 -
HN2D02FU,LF

数据表

- 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active 3 Independent Standard 80mA 1.2 V @ 100 mA Small Signal =< 200mA (Io), Any Speed 4 ns 500 nA @ 80 V 80 V 125°C (Max) - - Surface Mount US6
HN4D01JU(TE85L,F)

HN4D01JU(TE85L,F)

DIODE ARRAY GP 80V 100MA 5-SSOP

Toshiba Semiconductor and Storage

2,387 -
HN4D01JU(TE85L,F)

数据表

- 5-TSSOP, SC-70-5, SOT-353 Tape & Reel (TR) Active 1 Pair Common Anode Standard 100mA 1.2 V @ 100 mA Small Signal =< 200mA (Io), Any Speed 1.6 ns 500 nA @ 80 V 80 V 150°C (Max) - - Surface Mount 5-SSOP
HN1D01F(TE85L,F)

HN1D01F(TE85L,F)

DIODE ARRAY GP 80V 100MA SM6

Toshiba Semiconductor and Storage

3,000 -
HN1D01F(TE85L,F)

数据表

- SC-74, SOT-457 Tape & Reel (TR) Active 2 Pair Common Anode Standard 100mA 1.2 V @ 100 mA Small Signal =< 200mA (Io), Any Speed 4 ns 500 nA @ 80 V 80 V 125°C (Max) - - Surface Mount SM6
BAV70,LM

BAV70,LM

DIODE ARRAY GP 100V 215MA SOT233

Toshiba Semiconductor and Storage

262 -
BAV70,LM

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active 1 Pair Common Cathode Standard 215mA 1.25 V @ 150 mA Fast Recovery =< 500ns, > 200mA (Io) 4 ns 200 nA @ 80 V 100 V 150°C (Max) - - Surface Mount SOT-23-3
1SS361,LJ(CT

1SS361,LJ(CT

DIODE ARRAY GP 80V 100MA SSM

Toshiba Semiconductor and Storage

611 -
1SS361,LJ(CT

数据表

- SC-75, SOT-416 Tape & Reel (TR) Active 1 Pair Common Cathode Standard 100mA 1.2 V @ 100 mA Small Signal =< 200mA (Io), Any Speed 4 ns 500 nA @ 80 V 80 V 125°C (Max) - - Surface Mount SSM
HN2D01JE(TE85L,F)

HN2D01JE(TE85L,F)

DIODE ARRAY GP 80V 100MA ESV

Toshiba Semiconductor and Storage

491 -
HN2D01JE(TE85L,F)

数据表

- SOT-553 Tape & Reel (TR) Active 2 Independent Standard 100mA 1.2 V @ 100 mA Small Signal =< 200mA (Io), Any Speed 1.6 ns 500 nA @ 80 V 80 V 150°C (Max) - - Surface Mount ESV
TRS12N65FB,S1Q

TRS12N65FB,S1Q

DIODE ARRAY SIC 650V 6A TO-247

Toshiba Semiconductor and Storage

53 -
TRS12N65FB,S1Q

数据表

- TO-247-3 Tube Active 1 Pair Common Cathode SiC (Silicon Carbide) Schottky 6A (DC) 1.6 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 30 µA @ 650 V 650 V 175°C - - Through Hole TO-247
TRS10N120HB,S1Q

TRS10N120HB,S1Q

DIODE ARRAY SIC 1200V 18A TO-247

Toshiba Semiconductor and Storage

60 -
TRS10N120HB,S1Q

数据表

- TO-247-3 Tube Active 1 Pair Common Cathode SiC (Silicon Carbide) Schottky 18A 1.45 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 1200 V 1200 V 175°C - - Through Hole TO-247
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