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二极管阵列

制造商 系列 封装/外壳 包装 产品状态 二极管配置 技术 电流 - 平均整流 (Io)(每个二极管) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电压 - 直流反向 (Vr)(最大值) 工作温度 - 结点 等级 认证 安装类型 供应商设备封装

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 二极管配置 技术 电流 - 平均整流 (Io)(每个二极管) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电压 - 直流反向 (Vr)(最大值) 工作温度 - 结点 等级 认证 安装类型 供应商设备封装
BAW56SH6727XTSA1

BAW56SH6727XTSA1

DIODE ARR GP 80V 200MA SOT363-PO

Infineon Technologies

5,248 -
BAW56SH6727XTSA1

数据表

- 6-VSSOP, SC-88, SOT-363 Tape & Reel (TR) Obsolete 2 Pair Common Anode Standard 200mA (DC) 1.25 V @ 150 mA Small Signal =< 200mA (Io), Any Speed 4 ns 150 nA @ 70 V 80 V 150°C (Max) - - Surface Mount PG-SOT363-PO
BAS21UE6359HTMA1

BAS21UE6359HTMA1

DIODE ARRAY GP 200V 125MA SC74-6

Infineon Technologies

6,929 -
BAS21UE6359HTMA1

数据表

- SC-74, SOT-457 Tape & Reel (TR) Obsolete 3 Independent Standard 125mA (DC) 1 V @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) 50 ns 100 nA @ 200 V 200 V 150°C (Max) Automotive AEC-Q101 Surface Mount PG-SC74-6
BAV99UE6359HTMA1

BAV99UE6359HTMA1

DIODE ARRAY GP 80V 100MA SC74-6

Infineon Technologies

8,342 -
BAV99UE6359HTMA1

数据表

- SC-74, SOT-457 Tape & Reel (TR) Obsolete 2 Pair Series Connection Standard 100mA (DC) 1.2 V @ 100 mA Small Signal =< 200mA (Io), Any Speed 4 ns 150 nA @ 70 V 80 V 150°C (Max) Automotive AEC-Q101 Surface Mount PG-SC74-6
BAW79DH6327XTSA1

BAW79DH6327XTSA1

DIODE ARRAY GP 400V 500MA SOT89

Infineon Technologies

2,924 -
BAW79DH6327XTSA1

数据表

- TO-243AA Tape & Reel (TR) Obsolete 1 Pair Common Cathode Standard 500mA 1.6 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 1 µs 1 µA @ 400 V 400 V 150°C (Max) Automotive AEC-Q101 Surface Mount PG-SOT89
IDW20G65C5BXKSA1

IDW20G65C5BXKSA1

DIODE ARR SIC 650V 10A PGTO2473

Infineon Technologies

7,210 -
IDW20G65C5BXKSA1

数据表

CoolSiC™+ TO-247-3 Tube Discontinued at Digi-Key 1 Pair Common Cathode SiC (Silicon Carbide) Schottky 10A (DC) 1.7 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) - 180 µA @ 650 V 650 V -55°C ~ 175°C - - Through Hole PG-TO247-3
IDW24G65C5BXKSA1

IDW24G65C5BXKSA1

DIODE ARR SIC 650V 12A PGTO2473

Infineon Technologies

7,262 -
IDW24G65C5BXKSA1

数据表

CoolSiC™+ TO-247-3 Tube Discontinued at Digi-Key 1 Pair Common Cathode SiC (Silicon Carbide) Schottky 12A (DC) 1.7 V @ 12 A Fast Recovery =< 500ns, > 200mA (Io) - 190 µA @ 650 V 650 V -55°C ~ 175°C - - Through Hole PG-TO247-3
IDW32G65C5BXKSA1

IDW32G65C5BXKSA1

DIODE ARR SIC 650V 16A PGTO2473

Infineon Technologies

4,682 -
IDW32G65C5BXKSA1

数据表

CoolSiC™+ TO-247-3 Tube Discontinued at Digi-Key 1 Pair Common Cathode SiC (Silicon Carbide) Schottky 16A (DC) 1.7 V @ 16 A Fast Recovery =< 500ns, > 200mA (Io) - 200 µA @ 650 V 650 V -55°C ~ 175°C - - Through Hole PG-TO247-3
IDW40G65C5BXKSA1

IDW40G65C5BXKSA1

DIODE ARR SIC 650V 20A PGTO2473

Infineon Technologies

7,622 -
IDW40G65C5BXKSA1

数据表

CoolSiC™+ TO-247-3 Tube Discontinued at Digi-Key 1 Pair Common Cathode SiC (Silicon Carbide) Schottky 20A (DC) 1.7 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) - 210 µA @ 650 V 650 V -55°C ~ 175°C - - Through Hole PG-TO247-3
IDW30S120FKSA1

IDW30S120FKSA1

DIODE ARR SIC 1200V 15A PGTO2473

Infineon Technologies

3,631 -
IDW30S120FKSA1

数据表

CoolSiC™+ TO-247-3 Tube Obsolete 1 Pair Common Cathode SiC (Silicon Carbide) Schottky 15A (DC) 1.8 V @ 30 A No Recovery Time > 500mA (Io) - 305 µA @ 1200 V 1200 V -55°C ~ 175°C - - Through Hole PG-TO247-3
DD1200S33K2CNOSA1

DD1200S33K2CNOSA1

DIODE MOD GP 3300V 1200A MOD

Infineon Technologies

7,368 -
DD1200S33K2CNOSA1

数据表

- Block, 4 Lead Tray Obsolete 2 Independent Standard 1200A (DC) 3.5 V @ 1200 A Standard Recovery >500ns, > 200mA (Io) - - 3300 V -40°C ~ 125°C - - Chassis Mount Module
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