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制造商 系列 封装/外壳 包装 产品状态 二极管类型 技术 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 电流 - 反向漏电 @ Vr 工作温度 等级 电压 - 反向峰值(最大值) 认证 安装类型 供应商设备封装

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 二极管类型 技术 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 电流 - 反向漏电 @ Vr 工作温度 等级 电压 - 反向峰值(最大值) 认证 安装类型 供应商设备封装
GBPC3508W-E4/51

GBPC3508W-E4/51

BRIDGE RECT 1P 800V 35A GBPC-W

Vishay General Semiconductor - Diodes Division

200 -
GBPC3508W-E4/51

数据表

- 4-Square, GBPC-W Box Active Single Phase Standard 35 A 1.1 V @ 17.5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - 800 V - Through Hole GBPC-W
VS-GBPC2502A

VS-GBPC2502A

BRIDGE RECT 1P 200V 25A GBPC-A

Vishay General Semiconductor - Diodes Division

3,071 -
VS-GBPC2502A

数据表

VS-GBPC 4-Square, GBPC-A Tray Active Single Phase Standard 25 A - 2 mA @ 200 V -55°C ~ 150°C (TJ) - 200 V - QC Terminal GBPC-A
VS-GBPC3504A

VS-GBPC3504A

BRIDGE RECT 1P 400V 35A GBPC-A

Vishay General Semiconductor - Diodes Division

139 -
VS-GBPC3504A

数据表

VS-GBPC 4-Square, GBPC-A Bulk Active Single Phase Standard 35 A - 2 mA @ 400 V -55°C ~ 150°C (TJ) - 400 V - QC Terminal GBPC-A
VS-36MB160A

VS-36MB160A

BRIDGE RECT 1P 1.6KV 35A D-34

Vishay General Semiconductor - Diodes Division

143 -
VS-36MB160A

数据表

- 4-Square, D-34 Bulk Active Single Phase Standard 35 A - 10 µA @ 1600 V -55°C ~ 150°C (TJ) - 1.6 kV - QC Terminal D-34
MB4S-E3/45

MB4S-E3/45

BRIDGE RECT 1P 400V 0.5A TO269AA

Vishay General Semiconductor - Diodes Division

4,155 -
MB4S-E3/45

数据表

- TO-269AA, 4-BESOP Tube Active Single Phase Standard 500 mA 1 V @ 400 mA 5 µA @ 400 V -55°C ~ 150°C (TJ) - 400 V - Surface Mount TO-269AA (MBS)
DF10SA-E3/45

DF10SA-E3/45

BRIDGE RECT 1PHASE 1KV 1A DFS

Vishay General Semiconductor - Diodes Division

1,550 -
DF10SA-E3/45

数据表

- 4-SMD, Gull Wing Tube Active Single Phase Standard 1 A 1.1 V @ 1 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) - 1 kV - Surface Mount DFS
DF04MA-E3/45

DF04MA-E3/45

BRIDGE RECT 1PHASE 400V 1A DFM

Vishay General Semiconductor - Diodes Division

4,762 -
DF04MA-E3/45

数据表

- 4-EDIP (0.300", 7.62mm) Tube Active Single Phase Standard 1 A 1.1 V @ 1 A 5 µA @ 400 V -55°C ~ 150°C (TJ) - 400 V - Through Hole DFM
DF08MA-E3/45

DF08MA-E3/45

BRIDGE RECT 1PHASE 800V 1A DFM

Vishay General Semiconductor - Diodes Division

3,658 -
DF08MA-E3/45

数据表

- 4-EDIP (0.300", 7.62mm) Tube Active Single Phase Standard 1 A 1.1 V @ 1 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - 800 V - Through Hole DFM
B250C800G-E4/51

B250C800G-E4/51

BRIDGE RECT 1P 400V 900MA WOG

Vishay General Semiconductor - Diodes Division

2,486 -
B250C800G-E4/51

数据表

- 4-Circular, WOG Bulk Active Single Phase Standard 900 mA 1 V @ 900 mA 10 µA @ 400 V -40°C ~ 125°C (TJ) - 400 V - Through Hole WOG
B380C800G-E4/51

B380C800G-E4/51

BRIDGE RECT 1P 600V 900MA WOG

Vishay General Semiconductor - Diodes Division

2,268 -
B380C800G-E4/51

数据表

- 4-Circular, WOG Bulk Active Single Phase Standard 900 mA 1 V @ 900 mA 10 µA @ 600 V -40°C ~ 125°C (TJ) - 600 V - Through Hole WOG
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