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桥式整流器

制造商 系列 封装/外壳 包装 产品状态 二极管类型 技术 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 电流 - 反向漏电 @ Vr 工作温度 等级 电压 - 反向峰值(最大值) 认证 安装类型 供应商设备封装

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 二极管类型 技术 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 电流 - 反向漏电 @ Vr 工作温度 等级 电压 - 反向峰值(最大值) 认证 安装类型 供应商设备封装
VS-GBPC3512W

VS-GBPC3512W

BRIDGE RECT 1P 1.2KV 35A GBPC-W

Vishay General Semiconductor - Diodes Division

1,254 -
VS-GBPC3512W

数据表

VS-GBPC 4-Square, GBPC-W Bulk Active Single Phase Standard 35 A - 2 mA @ 1.2 V -55°C ~ 150°C (TJ) - 1.2 kV - Through Hole GBPC-W
VS-GBPC3510A

VS-GBPC3510A

BRIDGE RECT 1P 1KV 35A GBPC-A

Vishay General Semiconductor - Diodes Division

510 -
VS-GBPC3510A

数据表

VS-GBPC 4-Square, GBPC-A Bulk Active Single Phase Standard 35 A - 2 mA @ 1 V -55°C ~ 150°C (TJ) - 1 kV - QC Terminal GBPC-A
VS-U5FH30BA60

VS-U5FH30BA60

BRIDGE RECT 1P 600V 30A SOT-227

Vishay General Semiconductor - Diodes Division

165 -
VS-U5FH30BA60

数据表

- SOT-227-4, miniBLOC Tube Active Single Phase Standard 30 A 2.1 V @ 30 A 30 µA @ 600 V -55°C ~ 175°C (TJ) - 600 V - Chassis Mount SOT-227
VS-300MT160C

VS-300MT160C

BRIDGE RECT 3P 1.6KV 258A MTC

Vishay General Semiconductor - Diodes Division

33 -
VS-300MT160C

数据表

- MTC Bulk Active Three Phase Standard 258 A 1.7 V @ 300 A - -40°C ~ 150°C (TJ) - 1.6 kV - Chassis Mount MTC
B80C800DM-E3/45

B80C800DM-E3/45

BRIDGE RECT 1P 125V 900MA DFM

Vishay General Semiconductor - Diodes Division

4,998 -
B80C800DM-E3/45

数据表

- 4-EDIP (0.300", 7.62mm) Tube Active Single Phase Standard 900 mA 1 V @ 900 mA 10 µA @ 125 V -40°C ~ 125°C (TJ) - 125 V - Through Hole DFM
B380C800DM-E3/45

B380C800DM-E3/45

BRIDGE RECT 1P 600V 900MA DFM

Vishay General Semiconductor - Diodes Division

4,855 -
B380C800DM-E3/45

数据表

- 4-EDIP (0.300", 7.62mm) Tube Active Single Phase Standard 900 mA 1 V @ 900 mA 10 µA @ 600 V -40°C ~ 125°C (TJ) - 600 V - Through Hole DFM
DF02MA-E3/45

DF02MA-E3/45

BRIDGE RECT 1PHASE 200V 1A DFM

Vishay General Semiconductor - Diodes Division

9,929 -
DF02MA-E3/45

数据表

- 4-EDIP (0.300", 7.62mm) Tube Active Single Phase Standard 1 A 1.1 V @ 1 A 5 µA @ 200 V -55°C ~ 150°C (TJ) - 200 V - Through Hole DFM
DF10MA-E3/45

DF10MA-E3/45

BRIDGE RECT 1PHASE 1KV 1A DFM

Vishay General Semiconductor - Diodes Division

7,288 -
DF10MA-E3/45

数据表

- 4-EDIP (0.300", 7.62mm) Tube Active Single Phase Standard 1 A 1.1 V @ 1 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) - 1 kV - Through Hole DFM
DF01SA-E3/45

DF01SA-E3/45

BRIDGE RECT 1PHASE 100V 1A DFS

Vishay General Semiconductor - Diodes Division

3,424 -
DF01SA-E3/45

数据表

- 4-SMD, Gull Wing Tube Active Single Phase Standard 1 A 1.1 V @ 1 A 5 µA @ 100 V -55°C ~ 150°C (TJ) - 100 V - Surface Mount DFS
B80C800GL-801E4/51

B80C800GL-801E4/51

BRIDGE RECT 1P 125V 900MA WOG

Vishay General Semiconductor - Diodes Division

2,900 -
B80C800GL-801E4/51

数据表

- 4-Circular, WOG Bag Active Single Phase Standard 900 mA 1 V @ 900 mA 10 µA @ 125 V -40°C ~ 125°C (TJ) - 125 V - Through Hole WOG
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