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MSCSM120AM08CT3AG

MSCSM120AM08CT3AG

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制造商部分
MSCSM120AM08CT3AG
制造商
Roving Networks / Microchip Technology
描述
PM-MOSFET-SIC-SBD~-SP3F
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
5
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Tube
零件状态:Active
场效应管类型:2 N Channel (Phase Leg)
场效应管特征:Silicon Carbide (SiC)
漏源电压 (vdss):1200V (1.2kV)
电流 - 连续漏极 (id) @ 25°c:337A (Tc)
rds on (max) @ id, vgs:7.8mOhm @ 160A, 20V
vgs(th) (最大值) @ id:2.8V @ 4mA
栅极电荷 (qg) (max) @ vgs:928nC @ 20V
输入电容 (ciss) (max) @ vds:12.08pF @ 1000V
功率 - 最大值:1.409kW (Tc)
工作温度:-40°C ~ 175°C (TJ)
安装类型:Chassis Mount
包/箱:Module
供应商设备包:SP3F

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