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NGTB75N65FL2WAG

NGTB75N65FL2WAG

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制造商部分
NGTB75N65FL2WAG
制造商
Sanyo Semiconductor/ON Semiconductor
描述
INSULATED GATE BIPOLAR TRANSISTO
类别
分立半导体产品
家庭
晶体管 - igbts - 单
系列
-
有存货
38
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Bulk
零件状态:Obsolete
igbt型:Field Stop
电压 - 集电极发射极击穿(最大值):650 V
电流 - 集电极 (ic) (max):200 A
电流 - 集电极脉冲 (icm):200 A
vce(on) (max) @ vge, ic:2V @ 15V, 75A
功率 - 最大值:536 W
开关能量:610µJ (on), 1.2mJ (off)
输入类型:Standard
栅极电荷:310 nC
td(开/关)@ 25°c:23ns/157ns
测试条件:400V, 75A, 10Ohm, 15V
反向恢复时间 (trr):90 ns
工作温度:-55°C ~ 175°C (TJ)
安装类型:Through Hole
包/箱:TO-247-4
供应商设备包:TO-247-4L

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