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PHN210,118

PHN210,118

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制造商部分
PHN210,118
制造商
NXP Semiconductors
描述
MOSFET 2N-CH 30V 8SOIC
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
7232
在线数据表
-
询问

Product Specifications

Type 描述
系列:TrenchMOS™
包裹:Tape & Reel (TR)
零件状态:Obsolete
场效应管类型:2 N-Channel (Dual)
场效应管特征:Logic Level Gate
漏源电压 (vdss):30V
电流 - 连续漏极 (id) @ 25°c:-
rds on (max) @ id, vgs:100mOhm @ 2.2A, 10V
vgs(th) (最大值) @ id:2.8V @ 1mA
栅极电荷 (qg) (max) @ vgs:6nC @ 10V
输入电容 (ciss) (max) @ vds:250pF @ 20V
功率 - 最大值:2W
工作温度:-65°C ~ 150°C (TJ)
安装类型:Surface Mount
包/箱:8-SOIC (0.154", 3.90mm Width)
供应商设备包:8-SO

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