| Type | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Obsolete |
| 场效应管类型: | - |
| 技术: | SiC (Silicon Carbide Junction Transistor) |
| 漏源电压 (vdss): | 650 V |
| 电流 - 连续漏极 (id) @ 25°c: | 8A (Tc) (158°C) |
| 驱动电压(最大 rds on,最小 rds on): | - |
| rds on (max) @ id, vgs: | 170mOhm @ 8A |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | 720 pF @ 35 V |
| 场效应管特征: | - |
| 功耗(最大值): | 200W (Tc) |
| 工作温度: | -55°C ~ 225°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | TO-276 |
| 包/箱: | TO-276AA |
| 图片 | 零件号 | 描述 | Stock / Unit Price |
|---|---|---|---|
![]() |
RJK0629DPE-00#J3Renesas Electronics America |
MOSFET N-CH 60V 85A 4LDPAK |
有存货: 0 $0.00000 |
![]() |
AOTF10N90Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 900V 10A TO220-3F |
有存货: 0 $0.00000 |
![]() |
IPL65R420E6AUMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 10.1A THIN-PAK |
有存货: 0 $0.00000 |
![]() |
IPD230N06NGBTMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 30A TO252-3 |
有存货: 0 $0.00000 |
![]() |
BSP317PE6327TIR (Infineon Technologies) |
MOSFET P-CH 250V 430MA SOT223-4 |
有存货: 0 $0.00000 |
![]() |
IRF7706GTRPBFIR (Infineon Technologies) |
MOSFET P-CH 30V 7A 8TSSOP |
有存货: 0 $0.00000 |
![]() |
IRLR3714ZTRIR (Infineon Technologies) |
MOSFET N-CH 20V 37A DPAK |
有存货: 0 $0.00000 |
![]() |
TSM4459CS RLGTSC (Taiwan Semiconductor) |
MOSFET P-CHANNEL 30V 17A 8SOP |
有存货: 0 $0.00000 |
![]() |
IRL3714SIR (Infineon Technologies) |
MOSFET N-CH 20V 36A D2PAK |
有存货: 0 $0.00000 |
![]() |
IRF8252TRPBF-1IR (Infineon Technologies) |
MOSFET N-CH 25V 25A 8SO |
有存货: 0 $0.00000 |