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NSVMUN5212DW1T1G

NSVMUN5212DW1T1G

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制造商部分
NSVMUN5212DW1T1G
制造商
Sanyo Semiconductor/ON Semiconductor
描述
TRANS 2NPN PREBIAS 0.25W SOT363
类别
分立半导体产品
家庭
晶体管 - 双极 (bjt) - 阵列,预偏置
系列
-
有存货
26698
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
晶体管型:2 NPN - Pre-Biased (Dual)
电流 - 集电极 (ic) (max):100mA
电压 - 集电极发射极击穿(最大值):50V
电阻器 - 基极 (r1):22kOhms
电阻器 - 发射极基极 (r2):22kOhms
直流电流增益 (hfe) (min) @ ic, vce:60 @ 5mA, 10V
vce 饱和度(最大值)@ ib, ic:250mV @ 300µA, 10mA
电流 - 集电极截止(最大值):500nA
频率转换:-
功率 - 最大值:250mW
安装类型:Surface Mount
包/箱:6-TSSOP, SC-88, SOT-363
供应商设备包:SC-88/SC70-6/SOT-363

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