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NSVB123JPDXV6T1G

NSVB123JPDXV6T1G

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制造商部分
NSVB123JPDXV6T1G
制造商
Sanyo Semiconductor/ON Semiconductor
描述
SMALL SIGNAL BIPOLAR TRANSISTOR
类别
分立半导体产品
家庭
晶体管 - 双极 (bjt) - 阵列,预偏置
系列
-
有存货
52000
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Bulk
零件状态:Obsolete
晶体管型:1 NPN, 1 PNP - Pre-Biased (Dual)
电流 - 集电极 (ic) (max):100mA
电压 - 集电极发射极击穿(最大值):50V
电阻器 - 基极 (r1):2.2kOhms
电阻器 - 发射极基极 (r2):4.7kOhms
直流电流增益 (hfe) (min) @ ic, vce:80 @ 5mA, 10V
vce 饱和度(最大值)@ ib, ic:250mV @ 300µA, 10mA
电流 - 集电极截止(最大值):500nA
频率转换:-
功率 - 最大值:500mW
安装类型:Surface Mount
包/箱:SOT-563, SOT-666
供应商设备包:SOT-563

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