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SH8M11TB1

SH8M11TB1

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制造商部分
SH8M11TB1
制造商
ROHM Semiconductor
描述
MOSFET N/P-CH 30V 3.5A 8SOP
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
1134
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Tape & Reel (TR)
零件状态:Not For New Designs
场效应管类型:N and P-Channel
场效应管特征:Logic Level Gate
漏源电压 (vdss):30V
电流 - 连续漏极 (id) @ 25°c:3.5A
rds on (max) @ id, vgs:98mOhm @ 3.5A, 10V
vgs(th) (最大值) @ id:2.5V @ 1mA
栅极电荷 (qg) (max) @ vgs:1.9nC @ 5V
输入电容 (ciss) (max) @ vds:85pF @ 10V
功率 - 最大值:2W
工作温度:150°C (TJ)
安装类型:Surface Mount
包/箱:8-SOIC (0.154", 3.90mm Width)
供应商设备包:8-SOP

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