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BSO612CVGHUMA1

BSO612CVGHUMA1

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制造商部分
BSO612CVGHUMA1
制造商
IR (Infineon Technologies)
描述
3A, 60V, 0.12OHM, 2-ELEMENT, N-
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
1053
在线数据表
-
询问

Product Specifications

Type 描述
系列:SIPMOS®
包裹:Bulk
零件状态:Active
场效应管类型:N and P-Channel
场效应管特征:Standard
漏源电压 (vdss):60V
电流 - 连续漏极 (id) @ 25°c:3A (Ta), 2A (Ta)
rds on (max) @ id, vgs:120mOhm @ 3A, 10V, 300mOhm @ 2A, 10V
vgs(th) (最大值) @ id:4V @ 20µA, 4V @ 450µA
栅极电荷 (qg) (max) @ vgs:15.5nC, 16nC @ 10V
输入电容 (ciss) (max) @ vds:340pF, 400pF @ 25V
功率 - 最大值:2W (Ta)
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
包/箱:8-SOIC (0.154", 3.90mm Width)
供应商设备包:PG-DSO-8

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