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WNSC08650T6J

WNSC08650T6J

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制造商部分
WNSC08650T6J
制造商
WeEn Semiconductors Co., Ltd
描述
SILICON CARBIDE POWER DIODE
类别
分立半导体产品
家庭
二极管 - 整流器 - 单
系列
-
有存货
3000
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
二极管型:Silicon Carbide Schottky
电压 - 直流反向 (vr) (max):650 V
电流 - 平均整流 (io):8A
电压 - 正向 (vf) (max) @ if:1.7 V @ 8 A
速度:No Recovery Time > 500mA (Io)
反向恢复时间 (trr):0 ns
电流 - 反向泄漏@ vr:50 µA @ 650 V
电容@vr, f:267pF @ 1V, 1MHz
安装类型:Surface Mount
包/箱:4-VDFN Exposed Pad
供应商设备包:5-DFN (8x8)
工作温度 - 结:175°C (Max)

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