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STGYA120M65DF2

STGYA120M65DF2

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制造商部分
STGYA120M65DF2
制造商
STMicroelectronics
描述
TRENCH GATE FIELD-STOP IGBT, M S
类别
分立半导体产品
家庭
晶体管 - igbts - 单
系列
-
有存货
587
在线数据表
-
询问

Product Specifications

Type 描述
系列:M
包裹:Tube
零件状态:Active
igbt型:NPT, Trench Field Stop
电压 - 集电极发射极击穿(最大值):650 V
电流 - 集电极 (ic) (max):160 A
电流 - 集电极脉冲 (icm):360 A
vce(on) (max) @ vge, ic:1.95V @ 15V, 120A
功率 - 最大值:625 W
开关能量:1.8mJ (on), 4.41mJ (off)
输入类型:Standard
栅极电荷:420 nC
td(开/关)@ 25°c:66ns/185ns
测试条件:400V, 120A, 4.7Ohm, 15V
反向恢复时间 (trr):202 ns
工作温度:-55°C ~ 175°C (TJ)
安装类型:Through Hole
包/箱:TO-247-3 Exposed Pad
供应商设备包:MAX247™

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